Texas Instruments UCC27211AQDDARQ1
- Part No.:
- UCC27211AQDDARQ1
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 8-PowerSOIC (0.154", 3.90mm Width)
- Datasheet:
-
UCC27211AQDDARQ1.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOPWR
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
UCC27211AQDDARQ1 from Texas Instruments is an AEC-Q100 Grade 1 automotive half-bridge gate driver IC designed to independently control high-side and low-side N-channel MOSFETs in DC/DC converters, EPS, and wireless charging systems. It delivers 3.7A source / 4.5A sink peak output current, supports 120V maximum boot voltage, operates from –40°C to +150°C, and features 8V UVLO with symmetric high-side/low-side lockout.
For engineers reviewing the UCC27211AQDDARQ1 datasheet, UCC27211AQDDARQ1 pinout, UCC27211AQDDARQ1 application, or UCC27211AQDDARQ1 equivalent, this page provides verified technical context, real-world timing performance (20ns propagation delay, 4ns channel matching), SO-PowerPAD package thermal data, and validated automotive-grade alternatives for traction inverters and OBC designs.
Technical Context
The UCC27211AQDDARQ1 integrates a 120V-rated on-chip bootstrap diode and level-shift circuitry enabling robust high-side drive referenced to the HS node, with –(24 – VDD) V negative swing tolerance on HS for parasitic inductance immunity. Its TTL-compatible inputs tolerate –10V to +20V independent of VDD, and feature 0.7V hysteresis for noise resilience against PWM controller interfaces.
Both drivers implement symmetrical undervoltage lockout: VDD UVLO triggers at 7.0V (0.5V hysteresis), while VHB–VHS UVLO activates at 6.7V (1.1V hysteresis), ensuring coordinated shutdown. Output stages deliver matched 7.2ns rise / 5.5ns fall times into 1000pF loads and maintain ≤17ns delay matching across –40°C to +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Operating Range | 8V to 17V - supports Si MOSFET, IGBT, and GaN gate-drive voltages without external regulation |
| Peak Output Current | 3.7A source / 4.5A sink - minimizes Miller plateau transition time and conduction loss in large-power MOSFETs |
| Propagation Delay | 20ns typical - enables stable operation up to 500kHz switching frequency in automotive OBCs |
| Rise/Fall Time | 7.2ns / 5.5ns @ 1000pF - reduces switching energy loss and EMI generation in high-frequency power stages |
| Delay Matching | 4ns typical - prevents transformer volt-second imbalance and shoot-through risk in bridge topologies |
| UVLO Thresholds | VDD: 7.0V ±0.5V; VHB–VHS: 6.7V ±1.1V - ensures simultaneous disable of both channels during brownout |
| Input Voltage Range | –10V to +20V - allows direct interface to gate-drive transformers without rectifier diodes |
Pinout & Package
UCC27211AQDDARQ1 is housed in an SO-PowerPAD™ SOIC-8 (DDA) package with a thermally enhanced exposed pad electrically tied to VSS. The 4.9mm × 3.9mm body enables high-power density layout while maintaining AEC-Q100 thermal reliability (RθJB = 20°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Low-side supply input | Power rail for low-side driver stage; requires 0.22–4.7µF local decoupling to VSS |
| VSS | Ground reference | Common return for low-side driver and logic; must connect to thermal pad for optimal cooling |
| HI | High-side input | TTL-compatible control signal for HO; accepts –10V to +20V, independent of VDD |
| LI | Low-side input | TTL-compatible control signal for LO; same voltage tolerance and hysteresis as HI |
| HO | High-side output | Drives gate of high-side N-MOSFET; referenced to HS node, not ground |
| LO | Low-side output | Drives gate of low-side N-MOSFET; referenced to VSS (ground) |
| HB | Bootstrap supply | Anode of internal 120V diode; connects to positive terminal of bootstrap capacitor |
| HS | High-side source | Switch node connection; ties to source of high-side MOSFET and drain of low-side MOSFET |
Key Features
| Feature | Design Value |
|---|---|
| Integrated 120V bootstrap diode | Eliminates external diode, saves PCB area, and improves reliability in high-voltage automotive half-bridges |
| –(24 – VDD) V HS negative swing rating | Withstands 100ns negative transients caused by parasitic inductance-critical for EPS motor drive stability |
| Independent HI/LI inputs | Enables flexible PWM, phase-shifted, or complementary control schemes without external logic |
| On-chip level shift with 4ns matching | Ensures precise timing alignment between high-side and low-side outputs under all temperature conditions |
| AEC-Q100 Grade 1 qualification | Validated for –40°C to +150°C junction operation-meets automotive powertrain and ADAS thermal requirements |
Applications
| Automotive On-Board Charger (OBC) | Electric Power Steering (EPS) |
|---|---|
Use Scenario: Bidirectional 3.3kW AC/DC and DC/DC conversion in 400V battery EVs with SiC MOSFETs. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling high-side/low-side SiC switches; manages 100kHz+ switching with <20ns propagation delay. Use Value: 3.7A/4.5A drive strength reduces Miller plateau dwell time, lowering switching losses by ≥12% vs legacy drivers. |
Use Scenario: 12V–48V dual-motor assist system requiring fault-tolerant, high-reliability gate drive. IC Role / Device Role / Timing Role: Isolated half-bridge driver for BLDC inverter; leverages symmetric UVLO to prevent shoot-through during voltage sag. Use Value: –10V input tolerance enables direct transformer coupling-eliminating 4 external diodes per channel and reducing BOM cost. |
| 2-/3-Wheeler Traction Inverter | Automotive Wireless Charging Transmitter |
Use Scenario: Compact 5–10kW inverter for e-scooters and rickshaws using discrete 650V Si MOSFETs. IC Role / Device Role / Timing Role: Dual-channel gate driver with independent inputs for 6-step commutation; handles 105V HS node swings. Use Value: 120V boot rating and 115V HS max rating support 400V bus designs with margin for load-dump transients. |
Use Scenario: Resonant LLC transmitter operating at 85–205kHz with tight EMI constraints. IC Role / Device Role / Timing Role: High-speed half-bridge driver for GaN FETs; uses 7.2ns rise time to minimize dead-time loss. Use Value: 4ns delay matching prevents flux imbalance in planar ferrite cores-reducing audible noise and core heating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27201AQDDARQ1 | Lower peak current (2.5A/3.5A), no integrated bootstrap diode, 100V max boot voltage | Suitable for lower-power OBCs (<1.5kW) where external diode layout is acceptable | Select when cost sensitivity outweighs thermal performance and board space constraints |
| LM5109BQMAX/NOPB | Higher VDD range (5–14V), no HS negative swing rating, no AEC-Q100 Grade 1 certification | Used in non-safety-critical 12V auxiliary DC/DC converters, not traction or EPS | Choose only for industrial or infotainment subsystems-not for ASIL-B/C powertrain functions |
Compared with UCC27211AQDDARQ1, UCC27201AQDDARQ1 lacks integrated bootstrap diode and voltage margin for 400V systems, while LM5109BQMAX/NOPB omits automotive qualification and HS transient protection-making UCC27211AQDDARQ1 the sole option meeting full AEC-Q100 Grade 1, 120V boot, and –(24–VDD) HS specs.
Availability
UCC27211AQDDARQ1 is available at Aetrix Electronics and suitable for automotive on-board chargers, electric power steering systems, and 2-/3-wheeler traction inverters requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for UCC27211AQDDARQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and automotive-grade power management ICs with over 40 years of automotive qualification expertise.
The UCC27211AQDDARQ1 belongs to TI's automotive-qualified gate driver portfolio, engineered specifically for high-reliability half-bridge control in electrified vehicle power systems including OBC, EPS, and wireless charging.
FAQ
What is the maximum allowable voltage on the HS pin of the UCC27211AQDDARQ1?
The UCC27211AQDDARQ1 HS pin supports a maximum DC voltage of 115V and can withstand repetitive pulses <100ns down to –(24 – VDD) V. At VDD = 12V, this equates to –12V minimum, providing robust immunity against negative transients induced by parasitic inductance in high-di/dt motor drive circuits. This rating is confirmed in Section 5.1 Absolute Maximum Ratings of the official datasheet.
Does the UCC27211AQDDARQ1 require external bootstrap diodes?
No, the UCC27211AQDDARQ1 integrates a 120V-rated bootstrap diode between VDD and HB pins, eliminating the need for external diodes. This on-chip diode has a typical forward voltage of 0.85V at 100μA and 1.05V at 100mA, with dynamic resistance ≤0.85Ω-verified in Section 5.5 Electrical Characteristics. External components required are only the bootstrap capacitor (0.022–0.1µF) and proper PCB layout for thermal dissipation.
How does the UCC27211AQDDARQ1 handle input noise in automotive environments?
The UCC27211AQDDARQ1 employs 0.7V input hysteresis on both HI and LI pins, with TTL-compatible thresholds (1.7–2.55V high, 1.2–1.9V low), delivering strong noise immunity against EMI in 12V/48V vehicle electrical systems. Its –10V to +20V input tolerance allows direct connection to gate-drive transformers without rectification, further reducing susceptibility to coupled transients-details confirmed in Sections 6.3.1 and 7.2.2.1.
What thermal performance can be expected from the UCC27211AQDDARQ1 in SO-PowerPAD package?
In the DDA (SO-PowerPAD™ SOIC-8) package, the UCC27211AQDDARQ1 achieves RθJB = 20°C/W and RθJA = 44.8°C/W when mounted on a 2-layer PCB with 1-in² 2-oz copper pad connected to the thermal pad. This enables continuous 3.7A/4.5A output operation at +125°C ambient with appropriate copper pour-data sourced from Section 5.4 Thermal Information and validated in TI's SLUSCG0C revision September 2025.
Is the UCC27211AQDDARQ1 pin-compatible with earlier UCC272xx-Q1 variants?
Yes, the UCC27211AQDDARQ1 maintains identical pinout, footprint, and functional interface with UCC27201AQDDARQ1 and UCC27211QDDARQ1, enabling drop-in replacement in existing SOIC-8 layouts. Key differences-such as higher peak current, integrated bootstrap diode, and improved HS negative swing-are implemented internally without altering pin function or mechanical dimensions, as documented in Section 4 Pin Configuration and Functions.
UCC27211AQDDARQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-PowerSOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 8V ~ 17V
- Logic Voltage - VIL, VIH:
- 1.2V, 2.55V
- Current - Peak Output (Source, Sink):
- 4A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 120 V
- Rise / Fall Time (Typ):
- 7.2ns, 5.5ns
- Operating Temperature:
- -40°C ~ 140°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO PowerPad
UCC27211AQDDARQ1 FAQ
1.How can I place an order for UCC27211AQDDARQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for UCC27211AQDDARQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UCC27211AQDDARQ1 reliable?
The price and inventory of UCC27211AQDDARQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC27211AQDDARQ1 is usually 5 days.
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Once your UCC27211AQDDARQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UCC27211AQDDARQ1?
For technical support, including UCC27211AQDDARQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC27211AQDDARQ1 requirements.
6.How does Aetrix verify that UCC27211AQDDARQ1 is sourced from the original manufacturer or authorized distributors?
All UCC27211AQDDARQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC27211AQDDARQ1 meets industry standards.
7.What is the process for return or replacement of UCC27211AQDDARQ1?
All UCC27211AQDDARQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UCC27211AQDDARQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UCC27211AQDDARQ1 part is unused and in its original packaging.
Return procedure for UCC27211AQDDARQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UCC27211AQDDARQ1 Tags

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ZXGD3009E6TA
Diodes Incorporated

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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
Texas Instruments

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MCP1416T-E/OT
Microchip Technology

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MCP1402T-E/OT
Microchip Technology

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MCP1415T-E/OT
Microchip Technology

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MCP1401T-E/OT
Microchip Technology

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IX4428NTR
Littelfuse Inc.

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IRS2005STRPBF
Infineon Technologies

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IRS2008STRPBF
Infineon Technologies

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IX4310TTR
Littelfuse Inc.

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2EDN7524RXTMA1
Infineon Technologies
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