Texas Instruments UCC27322DR

Overview

UCC27322DR from Texas Instruments is a non-inverting, single-channel, low-side MOSFET driver delivering ±9 A peak output current at the Miller plateau region using TrueDrive hybrid bipolar-CMOS output architecture. It operates from 4.5 V to 15 V supply, features 20-ns typical rise/fall times with 10-nF load, and includes an active-high enable (ENBL) pin for system-level control - deployed in high-frequency switch-mode power supplies and synchronous rectifiers.

For engineers reviewing the UCC27322DR datasheet, UCC27322DR pinout, UCC27322DR application, or UCC27322DR equivalent, this page delivers verified technical context, validated pin functions, real-world switching performance metrics, thermal package data, and confirmed alternative options for gate drive design in industrial DC-DC converters and motor controllers.

Technical Context

The UCC27322DR implements a non-inverting logic function with ENBL-controlled operation: when ENBL is high, OUT follows IN; when ENBL is low, OUT is forced low regardless of IN state. Its TrueDrive output stage combines bipolar and MOSFET transistors in parallel to deliver 9-A sourcing/sinking capability precisely where needed - during the Miller plateau - minimizing MOSFET switching losses.

Input thresholds are TTL/CMOS-compatible across 4.5–15 V VDD, with VIN_H = 2.2 V (typ), VIN_L = 1.2 V (typ), and built-in hysteresis on both IN and ENBL. The dual-ground architecture (AGND and PGND) isolates control and power return paths to suppress noise coupling, requiring separate 0.1-µF decoupling capacitors per VDD pin.

Key Specifications

Pinout & Package

UCC27322DR is packaged in an 8-pin SOIC (D package) with 3.91 mm × 4.90 mm body size and standard industry pinout. Thermal resistance is RθJA = 56.6°C/W and RθJC = 42°C/W, supporting up to 650 mW power dissipation at TA = 25°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side MOSFET driver applications.

Compared with UCC27322DR, UCC27322D offers identical performance in a different packaging format, while TPS2829DBVR trades peak current and enable functionality for ultra-small footprint - making UCC27322DR the sole option for high-current, ENBL-gated, thermally demanding applications.

Availability

UCC27322DR is available at Aetrix Electronics and suitable for switch-mode power supplies, motor controllers, Class-D amplifiers, and DC-DC converters requiring stable component supply, long-term lifecycle assurance, and full traceability for industrial and automotive-grade designs.

Supply support for UCC27322DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with over 50 years of innovation in high-reliability power conversion solutions.

The UCC27322DR belongs to TI's UCC2732x family of high-speed low-side gate drivers, engineered specifically for high-efficiency, high-frequency power systems where Miller current delivery and noise-immune enable control are critical.

FAQ

What is the logic configuration of the UCC27322DR?

The UCC27322DR is a non-inverting low-side MOSFET driver: when ENBL is high, the OUT pin follows the IN pin state (high → high, low → low). When ENBL is low, OUT is forced low regardless of IN. This behavior is confirmed in Table 8-1 of the SLUS504I datasheet and applies exclusively to the UCC27322DR variant - not the inverting UCC27321DR.

Does the UCC27322DR support 3.3-V logic inputs?

Yes, the UCC27322DR accepts 3.3-V logic inputs directly: its IN pin has TTL/CMOS-compatible thresholds (VIN_L = 1.2 V typ, VIN_H = 2.2 V typ) independent of VDD, and operates reliably across 4.5–15 V supply range. No level shifter is needed when interfacing with 3.3-V microcontrollers or FPGA I/O banks driving the UCC27322DR.

How is the enable function implemented on the UCC27322DR?

The UCC27322DR features an active-high ENBL pin (Pin 3) internally pulled up to VDD via a 100-kΩ resistor. When left open, the device operates normally; pulling ENBL low forces OUT low regardless of IN state - enabling hardware-based fault shutdown. ENBL thresholds are VEN_H = 2.2 V (typ) and VEN_L = 1.6 V (typ), with 0.55-V hysteresis for noise rejection in the UCC27322DR.

What package type does the UCC27322DR use?

The UCC27322DR uses the 8-pin SOIC (D) package with 3.91 mm × 4.90 mm body size and standard pinout. It is distinct from the MSOP-PowerPAD (DGN) variant - the "DR" suffix denotes tape-and-reel packaging format only, not a different die or package. Thermal resistance is RθJA = 56.6°C/W and RθJC = 42°C/W.

Can the UCC27322DR drive GaN HEMTs effectively?

Yes, the UCC27322DR is well-suited for GaN HEMT gate driving: its ±9-A peak current, 20-ns rise/fall times, and low 0.4–0.6 Ω output resistance minimize gate loop inductance effects and support fast, clean transitions required by GaN devices. The TrueDrive architecture delivers maximum current precisely at the Miller plateau (~5 V), which aligns with GaN gate threshold dynamics in the UCC27322DR.