Texas Instruments UCC27322MDEP

Overview

UCC27322MDEP from Texas Instruments is a radiation-hardened, high-speed low-side MOSFET driver delivering ±9 A peak gate drive current at the Miller plateau region, with 4–15 V supply range, 20 ns typical rise time (10 nF load), and integrated enable (ENBL) function. It targets defense-grade DC/DC converters and motor controllers requiring stable operation from –55°C to 125°C.

For engineers reviewing the UCC27322MDEP datasheet, UCC27322MDEP pinout, UCC27322MDEP application, or UCC27322MDEP equivalent, this page delivers verified technical context, exact terminal roles, thermal metrics for DGK package, TrueDrive™ hybrid output architecture details, and two validated alternative drivers for radiation-tolerant low-side gate drive applications.

Technical Context

The UCC27322MDEP implements a bipolar-MOSFET parallel hybrid output stage (TrueDrive™) that delivers 9 A sourcing/sinking capability specifically optimized for the Miller plateau region of power MOSFETs, minimizing switching losses in high-dV/dt topologies. Its dual ground structure-separate AGND (input reference) and PGND (output return)-reduces noise coupling during high-di/dt transitions.

Enable functionality is implemented on Pin 3 with internal 100 kΩ pull-up to VDD, active-high logic, 1.5–3.4 V rising threshold, and 0.18–1.15 V hysteresis-enabling robust control of driver state without external biasing. Propagation delays are asymmetric: 25 ns (IN↓→OUT↓) and 35 ns (IN↑→OUT↑), reflecting optimized turn-off priority for safety-critical power stages.

Key Specifications

Pinout & Package

DGK package: 8-pin MSOP with exposed thermal pad (not electrically connected). Dual VDD (Pins 1 & 8) and dual OUT (Pins 6 & 7) reduce bondwire inductance; separate AGND (Pin 4) and PGND (Pin 5) minimize ground bounce.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side MOSFET driver applications.

Compared with UCC27322MDEP, UCC27524ADGNR trades radiation hardening and 9-A drive for dual-input logic and lower price, while LM5113SD/NOPB adds high-side support but sacrifices temperature range, ENBL, and peak current-making UCC27322MDEP uniquely suited for mission-critical low-side drive where reliability trumps feature count.

Availability

UCC27322MDEP is available at Aetrix Electronics and suitable for defense avionics, satellite power regulation, and ruggedized motor control applications requiring stable component supply across extended temperature and radiation-exposed environments.

Supply support for UCC27322MDEP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and high-reliability components for industrial, automotive, and aerospace markets.

The UCC27322MDEP belongs to TI's Enhanced Product (EP) line-engineered for extended-life, radiation-tolerant, and extreme-temperature applications in defense, space, and medical systems where failure is not an option.

FAQ

What is the maximum operating junction temperature for UCC27322MDEP?

The UCC27322MDEP is rated for junction temperatures from –55°C to +150°C, with guaranteed operation across –55°C to +125°C ambient per its V62/11601-02YE qualification. This allows full 9-A drive performance in sealed enclosures or high-power-density designs without thermal derating below 125°C.

Does UCC27322MDEP support both inverting and non-inverting configurations?

No-UCC27322MDEP is a non-inverting low-side driver only. Its IN pin directly controls OUT state (IN high → OUT high). For inverting operation, an external inverter or complementary driver like UCC27321MDEP must be used; the UCC27322MDEP itself has no internal inversion logic.

How is the ENBL pin configured for default operation of UCC27322MDEP?

The ENBL pin of UCC27322MDEP is internally pulled up to VDD via a 100 kΩ resistor, making it active-high by default. Leaving ENBL unconnected enables normal operation; pulling it low disables the driver and forces OUT to low state regardless of IN, providing hardware-level fault containment.

Can UCC27322MDEP drive GaN HEMTs effectively?

Yes-UCC27322MDEP's ±9 A peak current, 20 ns rise time, and low 1.1 Ω pull-down resistance meet key GaN gate drive requirements. Its 4–15 V supply range aligns with common GaN gate thresholds (typically 3–6 V), and the Miller-optimized drive reduces switching losses in high-frequency GaN half-bridges.

What is the purpose of separating AGND and PGND on UCC27322MDEP?

AGND serves as the quiet reference for IN and ENBL inputs, while PGND carries high-di/dt return current from the OUT pins. Separating them prevents ground-bounce noise from modulating input thresholds-critical for stable operation in high-power, fast-switching applications like Class D amplifiers or motor drives.