Texas Instruments UCC27323DGN

Overview

UCC27323DGN from Texas Instruments is a dual low-side MOSFET driver with dual-inverting logic configuration, delivering ±4-A peak output current at the Miller plateau region, 20-ns rise/15-ns fall time (1.8-nF load), and operation across 4.5–15-V supply voltage - used to drive high-power N-channel MOSFETs in synchronous buck converters and half-bridge topologies.

For engineers reviewing the UCC27323DGN datasheet, UCC27323DGN pinout, UCC27323DGN application, or UCC27323DGN equivalent, key selection criteria include confirmed dual-inverting output behavior, MSOP-PowerPAD thermal performance (R_θJA = 56.6°C/W), ±4-A Miller-region drive capability, and compatibility with fast PWM controllers requiring sub-40-ns propagation delay.

Technical Context

The UCC27323DGN implements a Bi-CMOS hybrid output stage-parallel bipolar and MOSFET transistors-that sustains ±4-A peak sourcing/sinking even at V_DD = 4.5 V, enabling robust gate drive during critical Miller plateau transitions. Its TTL/CMOS-compatible inputs feature wide hysteresis (VIN_H = 1.6–2.5 V, VIN_L = 0.8–1.5 V) and are supply-voltage independent.

As a dual-inverting driver, both OUTA and OUTB invert their respective inputs (INA, INB); unused inputs must be tied to V_DD or GND. Propagation delays are asymmetric: t_D1 = 25–40 ns (IN↑→OUT↓), t_D2 = 35 ns (IN↓→OUT↑), supporting precise timing control in phase-shifted or complementary-switching configurations.

Key Specifications

Pinout & Package

UCC27323DGN uses an 8-pin MSOP package with exposed PowerPAD (DGN), measuring 3.00 mm × 3.00 mm, where the PowerPAD is electrically connected to GND and provides low thermal resistance (R_θJB = 32.6°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side MOSFET driver applications.

Compared with UCC27324DGN, the UCC27323DGN enables direct interface to inverting PWM controllers without logic inversion; compared with LM5112MG/NOPB, it delivers dual-channel coordination and layout simplicity for bridge topologies - making it optimal for half-bridge, synchronous buck, and three-phase inverter legs.

Availability

UCC27323DGN is available at Aetrix Electronics and suitable for switch-mode power supplies, solar microinverters, and industrial motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for UCC27323DGN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management ICs, with leadership in high-reliability industrial and automotive-grade components.

The UCC27323DGN belongs to TI's UCCx732x dual MOSFET driver product line, engineered specifically for high-efficiency, high-frequency power conversion where precise timing, high peak current, and thermal resilience are critical.

FAQ

What logic configuration does the UCC27323DGN implement?

The UCC27323DGN implements dual-inverting logic: both OUTA and OUTB invert their respective inputs (INA and INB). This is confirmed in the device comparison table and truth table of the datasheet. It differs from UCC27324DGN (dual noninverting) and UCC27325DGN (mixed). Using UCC27323DGN with noninverting PWM signals requires external inversion or logic adjustment to avoid functional misoperation.

Can the two outputs of the UCC27323DGN be paralleled for higher drive current?

Yes, the UCC27323DGN supports paralleling of OUTA and OUTB to achieve up to 8-A peak drive current. TI specifies this in Section 8.2.2.2, requiring matched PCB routing (shorted INA/INB near the IC and OUTA/OUTB tied together), fast input edges (>20 V/µs), and optionally split gate resistors to balance channel dynamics. The bi-CMOS architecture ensures current sharing without external ballasting.

What is the thermal advantage of the UCC27323DGN's MSOP-PowerPAD package?

The UCC27323DGN's MSOP-PowerPAD (DGN) package achieves R_θJA = 56.6°C/W - 47% lower than the SOIC-8 (D) variant (107.3°C/W). This is due to the exposed GND-connected PowerPAD that enhances heat transfer to the PCB. At 1-W dissipation, junction-to-ambient rise is reduced by ~28°C, directly improving reliability and enabling higher sustained output current in compact layouts.

Does the UCC27323DGN require external Schottky clamping diodes?

No, the UCC27323DGN's low-impedance output stage and integrated body-diode path provide sufficient undershoot/overshoot protection for most MOSFET gate drives. Section 7.3.2 states external Schottky clamps are "not required in many cases" due to the driver's ability to sink/source ±4-A and its low output impedance - verified by typical application waveforms showing clean edges without ringing.

What is the minimum recommended VDD bypass capacitance for the UCC27323DGN?

Texas Instruments recommends a minimum 0.1-μF ceramic capacitor placed directly between V_DD and GND pins (pins 6 and 3), plus a bulk capacitor ≥1 μF (low-ESR type) in parallel. This dual-capacitor network maintains low AC impedance across 100 kHz–100 MHz, preventing supply rail collapse during ±4-A transient current pulses - a requirement explicitly stated in Section 8.2.2.3 of the UCC27323DGN datasheet.