Texas Instruments UCC27323DGNR

Overview

UCC27323DGNR from Texas Instruments is a dual low-side MOSFET driver with dual-inverting logic configuration, delivering ±4-A peak gate drive current at the Miller plateau region, 20-ns rise/15-ns fall time into 1.8-nF load, and operating across 4.5–15-V supply voltage - used to drive high-power N-channel MOSFETs in synchronous buck converters and half-bridge topologies.

For engineers reviewing the UCC27323DGNR datasheet, UCC27323DGNR pinout, UCC27323DGNR application, or UCC27323DGNR equivalent, key selection considerations include its dual-inverting output architecture, thermally enhanced MSOP-PowerPAD™ package, ±4-A Miller-region drive capability, TTL/CMOS input compatibility independent of VDD, and industry-standard 8-pin layout for PCB layout reuse and thermal management in high-density power stages.

Technical Context

The UCC27323DGNR implements a Bi-CMOS hybrid output stage-combining bipolar and MOSFET transistors in parallel-to sustain ±4-A peak sourcing/sinking even at low VDD (4.5 V), enabling robust gate drive during the Miller plateau where gate charge demand peaks. Its input stage features wide hysteresis and supply-independent TTL/CMOS thresholds (VIN_H = 1.6–2.5 V, VIN_L = 0.8–1.5 V), ensuring noise immunity in noisy power environments.

As a dual-inverting driver, both OUTA and OUTB invert their respective inputs (INA, INB); this configuration directly supports high-side P-channel or low-side N-channel switching in complementary topologies when paired with level-shifting or bootstrap circuits. The device operates over –40°C to +125°C junction temperature and requires no external pull-ups due to rail-to-rail output swing (GND to VDD).

Key Specifications

Pinout & Package

UCC27323DGNR uses an 8-pin MSOP package with exposed PowerPAD™ thermal pad (DGN), measuring 3.00 mm × 3.00 mm, optimized for low thermal resistance and high-power density PCB layouts. The PowerPAD is electrically connected to GND and must be soldered to a large copper pour for optimal heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side gate driver applications.

Compared with TC4427ACOA and LM5112MYX/NOPB, the UCC27323DGNR uniquely balances 4-A Miller-region drive, industry-standard pinout, and ultra-low thermal resistance in a compact MSOP-PowerPAD package - making it optimal for thermally constrained, high-frequency, dual low-side gate-drive applications where layout reuse and reliability are prioritized over integrated features or lowest unit cost.

Availability

UCC27323DGNR is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, and solar inverter gate-drive stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for UCC27323DGNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in high-reliability power conversion solutions.

The UCC27323DGNR belongs to TI's UCCx732x dual MOSFET driver product line, engineered specifically for high-efficiency, high-frequency power stages in industrial, automotive, and renewable energy systems where robust gate drive and thermal resilience are critical.

FAQ

What logic configuration does the UCC27323DGNR implement?

The UCC27323DGNR implements a dual-inverting logic configuration: both OUTA and OUTB invert their respective inputs (INA and INB). This matches standard half-bridge low-side drive requirements when paired with high-side drivers or bootstrap circuits. Unlike UCC27324 (dual noninverting) or UCC27325 (mixed), the UCC27323DGNR is selected specifically for applications needing inverted gate signals on both outputs - confirmed in TI's Device Comparison Table and Truth Table (Section 7.4).

Does the UCC27323DGNR support paralleling its outputs for higher drive current?

Yes, the UCC27323DGNR supports paralleling OUTA and OUTB to deliver up to 8-A peak gate drive current. TI explicitly recommends shorting INA and INB together near the IC, and tying OUTA and OUTB directly (or splitting external gate resistors equally) to minimize channel mismatch. This capability is documented in Section 1 ("Features") and Section 8.2.2.2 ("Parallel Outputs") of the SLUS492K datasheet.

What is the thermal advantage of the MSOP-PowerPAD™ package used by the UCC27323DGNR?

The UCC27323DGNR's MSOP-PowerPAD™ package delivers RθJA = 56.6°C/W - 47% lower than the SOIC-8 variant (107.3°C/W). This is achieved via the exposed thermal pad electrically and thermally connected to GND, requiring soldering to a large PCB copper area. The improvement enables 1.5× higher continuous power dissipation at the same ambient temperature, critical for sealed or convection-limited enclosures in solar and motor-control applications.

Can the UCC27323DGNR drive SiC or GaN MOSFETs effectively?

Yes, the UCC27323DGNR is suitable for driving SiC and GaN MOSFETs due to its ±4-A peak current, 20/15-ns switching speeds, and ability to sustain drive strength down to 4.5-V VDD - matching the low gate-threshold and high dV/dt requirements of wide-bandgap devices. TI validates its use in SiC-based solar inverter MPPT stages (Section 2 Applications), and its constant-current output architecture prevents ringing during fast transitions.

What are the absolute maximum ratings for input voltage on the UCC27323DGNR?

The UCC27323DGNR specifies an absolute maximum analog input voltage range of –0.3 V to VDD + 0.3 V (not exceeding 16 V), per Section 6.1 Absolute Maximum Ratings. This allows safe operation with input signals slightly exceeding VDD (e.g., 5-V logic driving a 3.3-V VDD system with clamping), but requires external protection if subjected to sustained overvoltage or negative transients beyond these limits.