Texas Instruments UCC27323DR

Overview

UCC27323DR from Texas Instruments is a dual low-side MOSFET driver IC with dual-inverting logic configuration, ±4-A peak output current at the Miller plateau region, 20-ns rise / 15-ns fall time (1.8-nF load), and operation across 4.5–15-V supply voltage - used to drive power MOSFET gates in high-frequency switch-mode power supplies.

For engineers reviewing the UCC27323DR datasheet, UCC27323DR pinout, UCC27323DR application, or UCC27323DR equivalent, this page delivers verified technical identity, SOIC-8 package mapping, confirmed dual-inverting functionality, thermal resistance (R_θJA = 107.3°C/W), and real-world gate-drive timing behavior under defined load conditions.

Technical Context

The UCC27323DR implements a Bi-CMOS hybrid output stage combining bipolar and MOSFET transistors in parallel to sustain ±4-A peak current even at low V_DD (4.5 V), enabling robust Miller plateau charging/discharging. Its TTL/CMOS-compatible inputs feature wide hysteresis (VIN_H = 1.6–2.5 V, VIN_L = 0.8–1.5 V) and are supply-voltage independent.

It operates exclusively as a low-side driver with dual-inverting outputs (OUTA and OUTB invert respective inputs INA/INB), supports output paralleling for higher drive current, and requires external pull-up/down resistors only if gate control timing asymmetry must be mitigated - no internal level-shifting or bootstrap circuitry is present.

Key Specifications

Pinout & Package

UCC27323DR is housed in an 8-pin SOIC (D) package (4.90 mm × 3.91 mm), thermally optimized for PCB-mounted low-side gate drive applications. The PowerPAD variant (DGN) is not used in this part number - UCC27323DR exclusively uses the standard SOIC-8 outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side gate driver applications.

Compared with UCC27324DR, UCC27323DR provides inverted logic essential for synchronous rectifier control, while versus TC4427ACOA it delivers 3.3× higher peak current and 40% faster switching - directly reducing conduction losses in high-frequency, high-current power stages.

Availability

UCC27323DR is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, solar inverters, and motor control systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for UCC27323DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability power solutions.

The UCC27323DR belongs to TI's UCCx732x dual gate driver product line, engineered specifically for high-efficiency, high-frequency power conversion where precise, high-current, low-latency MOSFET gate control is critical.

FAQ

What logic configuration does the UCC27323DR implement?

The UCC27323DR implements a dual-inverting logic configuration: both OUTA and OUTB invert their respective inputs INA and INB. This is confirmed in TI's device comparison table and functional truth table - distinguishing it from UCC27324DR (dual noninverting) and UCC27325DR (mixed). The UCC27323DR is therefore selected when system-level control signals require inversion before reaching the power MOSFET gates.

Does the UCC27323DR support paralleling of its two outputs?

Yes, the UCC27323DR supports paralleling of OUTA and OUTB to deliver up to ±8-A peak current, as documented in Section 8.2.2.2 of the datasheet. To ensure balanced operation, INA and INB must be shorted as close to the IC as possible, and input signal slew rate must exceed 20 V/µs. This capability is validated in TI's test circuits and enables driving ultra-high-Q_g SiC MOSFETs without external buffers.

What is the maximum capacitive load the UCC27323DR can drive while maintaining specified timing?

The UCC27323DR's 20-ns rise / 15-ns fall times are specified at C_LOAD = 1.8 nF. While it can drive larger loads (e.g., 10 nF), timing degrades predictably: rise time increases to ~35 ns and fall time to ~25 ns per Figure 6-2. For reliable operation beyond 1.8 nF, designers must verify timing margins against target switching frequency and dead-time requirements using TI's application curves.

Is the UCC27323DR suitable for driving high-side N-channel MOSFETs?

No - the UCC27323DR is a dedicated low-side driver with ground-referenced outputs and no built-in level-shifting or bootstrap circuitry. It cannot directly drive high-side N-MOSFETs. For high-side drive, TI recommends pairing UCC27323DR with an isolated gate driver (e.g., UCC5350) or using a high-side-specific part like UCC27201. Its dual-inverting outputs are intended for low-side N-MOSFETs or high-side P-MOSFETs only.

What thermal considerations apply to the UCC27323DR in SOIC-8 package?

The UCC27323DR in SOIC-8 (D) package has R_θJA = 107.3°C/W. At 4-A peak current and 300-kHz switching, typical power dissipation is ~0.43 W (per Equation 4 in datasheet). With 25°C ambient, junction temperature reaches ~72°C - well within the –40°C to +125°C operating range. Layout best practices include 2-in² copper pour under Pin 3 (GND) and thermal vias to inner layers to reduce R_θJB.