Texas Instruments UCC27323P

Overview

UCC27323P from Texas Instruments is a dual low-side MOSFET driver IC with dual-inverting logic configuration, delivering ±4-A peak gate drive current at the Miller plateau region, 20-ns rise / 15-ns fall time (1.8-nF load), and operation across 4.5–15-V supply voltage - used to drive high-power N-channel MOSFETs in synchronous buck converters and half-bridge topologies.

For engineers reviewing the UCC27323P datasheet, UCC27323P pinout, UCC27323P application, or UCC27323P equivalent, this page delivers verified functional identity, confirmed thermal performance in PDIP-8 package, validated input hysteresis and noise immunity, and real-world parallel-output implementation guidance for enhanced gate drive capability.

Technical Context

The UCC27323P implements a Bi-CMOS hybrid output stage-combining bipolar transistors and MOSFETs in parallel-to sustain ±4-A peak sourcing/sinking even at low VDD (4.5 V), enabling robust Miller plateau drive without droop. Its dual-inverting logic matches complementary high-side/lower-side control schemes in synchronous rectification.

Input thresholds (VIN_H = 1.6–2.5 V, VIN_L = 0.8–1.5 V) are supply-independent with wide hysteresis, ensuring TTL/CMOS compatibility and noise immunity up to 20 V/µs input slew rate. Propagation delays (TD1 = 25–40 ns, TD2 = 35 ns) and matched channel timing support high-frequency switching up to 1 MHz.

Key Specifications

Pinout & Package

UCC27323P uses an 8-pin PDIP (Plastic Dual In-line Package) with 0.3-inch body width and through-hole mounting. Thermal resistance RθJA = 55.5°C/W enables reliable operation up to 1.2 W dissipation at 25°C ambient with standard PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side gate driver applications.

Compared with UCC27323D, the UCC27323P offers 47% lower junction-to-ambient thermal resistance (55.5 vs 107.3°C/W), enabling higher continuous power in through-hole industrial modules; versus UCC27324P, it provides inverted logic essential for complementary gate drive without external inverters - a key differentiator in cost-sensitive power supplies.

Availability

UCC27323P is available at Aetrix Electronics and suitable for switch-mode power supplies, solar inverters, and motor control systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UCC27323P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability power conversion ICs.

The UCC27323P belongs to TI's UCCx732x dual MOSFET driver product line, engineered specifically for high-efficiency, high-frequency power stages where precise, high-current gate drive and thermal resilience are critical.

FAQ

What logic configuration does the UCC27323P implement?

The UCC27323P implements dual-inverting logic: both OUTA and OUTB invert their respective inputs (INA and INB). This matches controllers like the UC3842 that provide complementary PWM outputs, eliminating external inverters. The UCC27323P truth table confirms LOW input → HIGH output and HIGH input → LOW output for both channels - verified in Section 7.4 of the SLUS492K datasheet.

Can the UCC27323P drive P-channel MOSFETs on the high side?

No - the UCC27323P is a dedicated low-side driver with outputs referenced to GND. It cannot directly drive high-side P-channel MOSFETs because its outputs lack floating supply capability or level-shifting. For high-side P-MOSFET drive, a dedicated high-side driver (e.g., UCC27201) or bootstrap-based N-MOSFET solution is required. The UCC27323P datasheet explicitly states OUTA/OUTB swing from GND to VDD only.

What is the maximum capacitive load the UCC27323P can drive reliably?

The UCC27323P is characterized up to 10-nF load in TI's application curves (Figure 8-5), delivering linear 20/15-ns edges. At 10-nF and 12-V VDD, power dissipation reaches ~0.43 W - within the 1.2-W thermal limit of the PDIP-8 package at 25°C ambient. Driving >15-nF loads risks excessive die heating and timing degradation; external gate resistors or paralleled outputs are recommended for larger gates.

Does the UCC27323P require external pull-up or pull-down resistors on INA/INB?

No - the UCC27323P inputs have built-in hysteresis and rail-to-rail compatibility, but unused inputs must be hard-connected to VDD or GND (not left floating) to prevent oscillation or increased supply current. TI's datasheet Section 5 explicitly warns against floating inputs due to undefined logic states and potential shoot-through in driven MOSFETs - no pull-up/down resistors are needed if properly terminated.

How does the UCC27323P's Bi-CMOS output stage improve performance over standard MOSFET-only drivers?

The UCC27323P's Bi-CMOS output stage combines bipolar transistors (for high-speed, low-impedance current delivery) and MOSFETs (for efficient conduction at low VDD) in parallel. This architecture maintains ±4-A peak drive down to 4.5-V supply - unlike pure-MOSFET drivers whose output current collapses below 6 V. It also reduces output resistance (ROL = 0.4–1.0 Ω), cutting I²R losses during gate charging and enabling faster Miller plateau traversal.