Texas Instruments UCC27324DGNR

Overview

UCC27324DGNR from Texas Instruments is a dual noninverting low-side MOSFET driver IC delivering ±4 A peak gate drive current at the Miller plateau region, with 20 ns rise / 15 ns fall time (1.8 nF load), 25 ns/35 ns input-to-output propagation delay, and operation across 4.5–15 V supply voltage for switch-mode power supplies and motor control.

For engineers reviewing the UCC27324DGNR datasheet, UCC27324DGNR pinout, UCC27324DGNR application, or UCC27324DGNR equivalent, this page delivers verified electrical specs, thermal performance in MSOP-PowerPAD™, dual-channel noninverting logic mapping, and real-world design implications for high-frequency gate driving.

Technical Context

The UCC27324DGNR implements a Bi-CMOS hybrid output stage-parallel bipolar and MOSFET transistors-that sustains ±4 A peak sourcing/sinking capability even at low VDD (4.5 V), enabling robust Miller plateau drive without droop. Its TTL/CMOS-compatible inputs feature wide hysteresis (VIN_H = 1.6–2.5 V, VIN_L = 0.8–1.5 V) and are supply-voltage independent, ensuring noise immunity in noisy power-conversion environments.

As a dual noninverting driver, both OUTA and OUTB follow their respective inputs (INA, INB) with matched propagation delays (TD1 = 25–40 ns, TD2 = 35 ns max), supporting synchronous N-channel MOSFET switching. The device operates from –40°C to +125°C and integrates no-connection pins (1 and 8) to isolate unused internal nodes while maintaining industry-standard SOIC-8 pin compatibility in its 3.0 mm × 3.0 mm MSOP-PowerPAD™ package.

Key Specifications

Pinout & Package

UCC27324DGNR uses the thermally enhanced MSOP-8 PowerPAD™ package (3.0 mm × 3.0 mm), with an exposed thermal pad electrically connected to GND and optimized for PCB heat sinking via soldered thermal vias.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual noninverting low-side gate driver applications.

Compared with UCC27324DR, the UCC27324DGNR delivers 49% lower junction-to-board thermal resistance and 54% smaller footprint - enabling higher power density in thermally constrained converters. Versus LM5112MG/NOPB, it provides integrated dual-channel timing alignment and robust noise immunity at the cost of 1 A lower peak current.

Availability

UCC27324DGNR is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, solar inverters, and motor control systems requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for UCC27324DGNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability industrial and automotive components.

The UCC27324DGNR belongs to the UCCx732x family of high-speed low-side MOSFET drivers, engineered specifically for high-efficiency power conversion systems demanding robust gate drive, thermal resilience, and noise-immune digital interfacing.

FAQ

What is the maximum operating junction temperature for the UCC27324DGNR?

The UCC27324DGNR is rated for junction temperatures from –40°C to +125°C under continuous operation. This range is validated per TI's characterization and supports industrial and automotive under-hood applications. Thermal design must ensure RθJB ≤ 32.6°C/W and proper PowerPAD™ soldering to maintain reliability at the upper limit.

Can the UCC27324DGNR drive both channels in parallel to increase output current?

Yes, the UCC27324DGNR supports paralleling OUTA and OUTB to deliver up to ±8 A peak current. TI recommends shorting INA and INB together at the IC pad, tying OUTA and OUTB directly (or splitting gate resistance equally), and matching PCB trace lengths to minimize channel skew. Input edge rate should exceed 20 V/µs to avoid timing mismatch.

Is the UCC27324DGNR pin-compatible with the UCC27324DR?

Yes - the UCC27324DGNR and UCC27324DR share identical pin functions and logic behavior, with identical pin numbering (e.g., VDD on pin 6, GND on pin 3). However, the DGN package is MSOP-8 PowerPAD™ (3.0 mm × 3.0 mm), while DR is SOIC-8 (4.9 mm × 3.91 mm); PCB layout must be redesigned for footprint and thermal pad.

Does the UCC27324DGNR require external pull-up or pull-down resistors on INA and INB?

No - the UCC27324DGNR inputs have built-in hysteresis and TTL/CMOS thresholds, but unused inputs (INA or INB) must be actively tied to either VDD or GND. Leaving them floating risks metastability, unintended switching, or increased EMI susceptibility; external resistors are unnecessary if hard-connected.

What is the purpose of the N/C pins (1 and 8) on the UCC27324DGNR?

Pins 1 and 8 on the UCC27324DGNR are No Internal Connection - they serve no electrical function and must remain unconnected. TI specifies no bonding wire or internal circuitry attached to these pins; routing traces or applying solder paste risks mechanical stress or shorting to adjacent pins in the fine-pitch MSOP package.