Texas Instruments UCC27423DGNR

Overview

UCC27423DGNR from Texas Instruments is a dual low-side MOSFET driver with dual inverting outputs, ±4-A peak source/sink current capability, 20-ns rise/15-ns fall times (1.8-nF load), 4–15-V supply range, and integrated enable inputs (ENBA/ENBB) for independent channel control-used to drive power MOSFET gates in high-frequency switching power stages.

For engineers reviewing the UCC27423DGNR datasheet, UCC27423DGNR pinout, UCC27423DGNR application, or UCC27423DGNR equivalent, key selection criteria include inverting logic configuration, thermal performance in MSOP-PowerPAD™ package, Miller-region current delivery, TTL/CMOS input compatibility across supply voltage, and enable-controlled channel shutdown for sequencing and fault protection.

Technical Context

The UCC27423DGNR implements a unique bipolar-MOSFET hybrid output stage that delivers ±4 A precisely at the Miller plateau during MOSFET turn-on/turn-off transitions, minimizing switching losses. Its dual inverting logic configuration ensures complementary gate drive for synchronous rectifiers or half-bridge topologies where both switches require inverted control signals.

Each channel features independently enabled operation via ENBA (Pin 1) and ENBB (Pin 8), internally pulled up to VDD with 100-kΩ resistors for active-high default operation. Inputs INA (Pin 2) and INB (Pin 4) are TTL/CMOS-compatible with hysteresis and withstand –5 V DC, supporting robust noise immunity in noisy power-conversion environments.

Key Specifications

Pinout & Package

UCC27423DGNR is housed in an 8-pin MSOP-PowerPAD™ (DGN) package with exposed thermal pad electrically tied to GND, delivering R_θJA = 56.6°C/W and enabling high-power-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side MOSFET driver applications.

Compared with UCC27423DGNR, UCC27524ADGNR offers higher current but incompatible logic polarity for synchronous rectification, while LM5113SDX/NOPB lacks dual integration and enable control-making UCC27423DGNR optimal for compact, enable-enabled, inverting dual-drive applications.

Availability

UCC27423DGNR is available at Aetrix Electronics and suitable for switch mode power supplies, DC/DC converters, and motor controllers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for UCC27423DGNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader designing analog ICs, embedded processors, and system solutions for industrial, automotive, and power applications.

The UCC2742x product line targets high-efficiency power conversion systems requiring fast, robust, thermally optimized gate driving-specifically engineered for synchronous rectification, multiphase regulators, and high-frequency SMPS.

FAQ

What logic configuration does the UCC27423DGNR implement?

The UCC27423DGNR implements dual inverting logic: OUTA and OUTB are inverted relative to INA and INB inputs, respectively. This configuration directly supports synchronous rectifier topologies and complementary half-bridge control without external inverters. The UCC27423DGNR datasheet confirms this in Table 7-2 and Figure 5-1, distinguishing it from UCC27424 (dual non-inverting) and UCC27425 (mixed).

Can the UCC27423DGNR drive both outputs in parallel?

Yes, the UCC27423DGNR supports paralleling OUTA and OUTB to deliver up to ±8 A peak current for driving ultra-high-gate-charge MOSFETs or GaN devices. The device's matched propagation delay (<1 ns typical) and identical output stage design ensure balanced current sharing. This capability is explicitly stated in the "Features" section and validated in application note SLUS545F Section 8.2.2.1.

What is the purpose of ENBA and ENBB on the UCC27423DGNR?

ENBA (Pin 1) and ENBB (Pin 8) are independent active-high enable inputs that force their respective outputs (OUTA and OUTB) low when deasserted-regardless of input state. Internally pulled up to VDD via 100-kΩ resistors, they support per-channel sequencing, fault blocking, and power-up coordination. This functionality is detailed in Section 7.3.1 and Table 5-1 of the UCC27423DGNR datasheet.

Does the UCC27423DGNR require external gate resistors?

The UCC27423DGNR can drive typical MOSFET gates (C_iss < 1000 pF) without external gate resistors due to its low output impedance (ROH = 1.2–2.5 Ω, ROL = 0.7–1.2 Ω). However, a small series resistor (2–10 Ω) is recommended to damp ringing in high-dV/dt environments or when driving very large C_iss devices. This guidance appears in Section 7.3.2 and Figure 8-2 of the UCC27423DGNR datasheet.

What thermal advantages does the MSOP-PowerPAD™ package provide for the UCC27423DGNR?

The MSOP-PowerPAD™ (DGN) package reduces R_θJA to 56.6°C/W-nearly half that of SOIC-8 (107.3°C/W)-by integrating an exposed copper thermal pad tied to GND. This enables 1.37 W continuous power dissipation at 70°C ambient (Section 6.6), critical for high-duty-cycle power stages. Thermal metrics are verified in Table 6-4 and supported by TI application briefs SLMA002 and SLMA004 cited in the UCC27423DGNR datasheet.