Texas Instruments UCC27423DR

Overview

UCC27423DR from Texas Instruments is a dual low-side MOSFET driver with dual inverting outputs, ±4-A peak source/sink current capability, 20-ns typical rise time and 15-ns typical fall time (1.8-nF load), 4-V to 15-V supply range, and –40°C to 125°C operating temperature - used to drive power MOSFET gates in high-frequency switch-mode power supplies.

For engineers reviewing the UCC27423DR datasheet, UCC27423DR pinout, UCC27423DR application, or UCC27423DR equivalent, this page delivers verified technical context, SOIC-8 package mapping, enable-controlled dual-channel timing behavior, thermal resistance data (R_θJA = 107.3°C/W), and real-world substitution guidance for gate driver selection.

Technical Context

The UCC27423DR implements a unique BiPolar + MOSFET hybrid output stage that delivers ±4 A precisely at the Miller plateau region during MOSFET switching transitions, minimizing shoot-through risk. Its dual inverting logic configuration (OUTA and OUTB both invert input signals) enables direct control of two N-channel MOSFETs in synchronous buck or half-bridge topologies.

Each channel features independent active-high enable pins (ENBA on Pin 1, ENBB on Pin 8), internally pulled up to VDD via 100-kΩ resistors. When disabled, outputs force low regardless of input state. TTL/CMOS-compatible inputs operate independently of supply voltage across the full 4–15-V range.

Key Specifications

Pinout & Package

UCC27423DR is packaged in an 8-pin SOIC (D package), 4.90 mm × 3.91 mm body size, with exposed pad not present (non-PowerPAD variant). Thermal resistance R_θJA = 107.3°C/W at T_A = 25°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side MOSFET driver applications.

Compared with UCC27424DR, UCC27423DR provides inverted outputs essential for direct low-side N-MOSFET control without external inverters; versus LM5113SDX, it offers dual independent channels with enable functionality and wider 4–15-V operation - critical for flexible, scalable power stage design.

Availability

UCC27423DR is available at Aetrix Electronics and suitable for switch-mode power supplies, DC/DC converters, motor controllers, and Class D amplifiers requiring stable component supply, long-term industrial lifecycle support, and SOIC-8 packaging compatibility.

Supply support for UCC27423DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion ICs.

The UCC27423DR belongs to TI's UCC2742x dual MOSFET driver family, designed specifically for high-speed, high-current gate driving in industrial and automotive power systems where Miller plateau control and thermal robustness are critical.

FAQ

What logic configuration does the UCC27423DR implement?

The UCC27423DR implements a dual inverting output configuration: OUTA inverts INA, and OUTB inverts INB. This is confirmed in the device comparison table and functional truth table of the datasheet. It is distinct from UCC27424DR (dual non-inverting) and UCC27425DR (mixed inverting/non-inverting). The UCC27423DR is intended for direct drive of two N-channel MOSFETs without external logic inversion.

Does the UCC27423DR support independent channel enable control?

Yes, the UCC27423DR provides fully independent enable control via ENBA (Pin 1) and ENBB (Pin 8). Both are active-high inputs with internal 100-kΩ pull-up resistors to VDD. When either enable pin is driven low, its corresponding output (OUTA or OUTB) is forced low regardless of input state - a feature explicitly documented in Table 5-1 and Section 7.3.1. This allows per-channel fault shutdown or sequencing in the UCC27423DR.

What is the maximum capacitive load the UCC27423DR can drive while maintaining specified timing?

The UCC27423DR's 20-ns rise and 15-ns fall times are specified with a 1.8-nF capacitive load, per Section 1 Features and Table 6-5. While the device can drive larger loads (e.g., 10 nF), timing degrades predictably: rise/fall times increase approximately linearly with load capacitance. For designs exceeding 1.8 nF, layout optimization (short traces, ground plane) and external gate resistors are recommended to maintain stability - all validated in the UCC27423DR's typical characteristics plots (Figures 6-12–6-15).

Is the UCC27423DR pin-compatible with older TI drivers like the UCC27324?

Yes, the UCC27423DR maintains industry-standard SOIC-8 pinout compatibility with the UCC27324, as stated in Section 1 Features and Table 7-1. Pins 1–8 map identically: ENBA/ENBB replace previously unused pins, preserving backward compatibility when left floating. However, UCC27423DR adds enable functionality and improved ±4-A drive - making it a functional upgrade, not just a footprint match, for legacy UCC27324 designs.

What thermal performance can be expected from the UCC27423DR in SOIC-8 package?

The UCC27423DR in SOIC-8 (D package) has a junction-to-ambient thermal resistance (R_θJA) of 107.3°C/W under standard JEDEC test conditions (2S2P board). Its maximum power dissipation at T_A = 70°C is 344–655 mW depending on PCB copper area, with derating of 6.25–11.9 mW/°C above 70°C. These values are measured and published in Section 6.4 and 6.6 of the datasheet - confirming the UCC27423DR's suitability for thermally constrained industrial applications.