Texas Instruments UCC27423QDGNRQ1

Overview

UCC27423QDGNRQ1 from Texas Instruments is an automotive-grade dual low-side MOSFET driver with dual inverting logic configuration, ±4-A peak output current, 20-ns rise/15-ns fall time (1.8-nF load), and 4-V to 15-V supply range - used to drive N-channel MOSFETs in high-frequency DC-DC converters and motor control half-bridges.

For engineers reviewing the UCC27423QDGNRQ1 datasheet, UCC27423QDGNRQ1 pinout, UCC27423QDGNRQ1 application, or UCC27423QDGNRQ1 equivalent, key selection considerations include its AEC-Q100 Grade 1 qualification (–40°C to +125°C), independent enable inputs (ENBA/ENBB), bipolar-CMOS hybrid output stage for Miller-region drive strength, and thermally enhanced MSOP PowerPAD™ package.

Technical Context

The UCC27423QDGNRQ1 implements a dual inverting logic architecture where both OUTA and OUTB invert their respective inputs (INA, INB), enabling synchronous control of two N-channel switches in high-side referenced configurations when paired with level-shifting circuitry. Its output stage combines bipolar and MOSFET transistors in parallel to deliver high current at low VDD while minimizing shoot-through risk during switching transitions.

Each channel features independently enabled operation via ENBA (Pin 1) and ENBB (Pin 8), internally pulled up to VDD with 100-kΩ resistors for active-high logic; disabled outputs default to low regardless of input state. Input thresholds (VIH = 2 V, VIL = 1 V) are TTL/CMOS-compatible across the full 4–15-V supply range.

Key Specifications

Pinout & Package

UCC27423QDGNRQ1 is housed in an 8-pin MSOP package with PowerPAD™ thermal pad (DGN), measuring 3.00 mm × 3.00 mm, with exposed ground pad on underside for low-junction-to-board thermal resistance (RθJB = 35.6°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side MOSFET driver applications.

Compared with UCC27424QDGNRQ1, the UCC27423QDGNRQ1 provides inverted logic essential for certain synchronous rectifier schemes; versus LM5113QDGSRQ1, it trades higher peak current for superior thermal performance in space-constrained layouts and granular enable control.

Availability

UCC27423QDGNRQ1 is available at Aetrix Electronics and suitable for automotive powertrain modules, industrial DC-DC converters, and motor control systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for UCC27423QDGNRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader designing analog ICs, embedded processors, and connectivity solutions for automotive, industrial, and communications markets.

The UCC2742x-Q1 product line delivers high-speed, high-current MOSFET drivers optimized for AEC-Q100-compliant automotive power systems - emphasizing thermal reliability, noise immunity, and precise timing control in safety-critical environments.

FAQ

What logic configuration does the UCC27423QDGNRQ1 implement?

The UCC27423QDGNRQ1 implements dual inverting logic: OUTA inverts INA, and OUTB inverts INB. This allows direct gate control of two N-channel MOSFETs in configurations requiring inverted drive signals - such as synchronous buck regulators where high-side switch control demands signal inversion relative to PWM source. The UCC27423QDGNRQ1 is distinct from UCC27424QDGNRQ1 (dual noninverting) and UCC27425QDGNRQ1 (mixed inverting/noninverting).

Does the UCC27423QDGNRQ1 support independent channel enable control?

Yes, the UCC27423QDGNRQ1 provides independent enable inputs: ENBA (Pin 1) controls OUTA, and ENBB (Pin 8) controls OUTB. Both are active-high, internally pulled up to VDD via 100-kΩ resistors. When either enable is low, its corresponding output is forced low regardless of input state - enabling precise phase shutdown, fault blanking, or soft-start sequencing without cross-talk between channels.

What package type and thermal advantages does the UCC27423QDGNRQ1 offer?

The UCC27423QDGNRQ1 uses the MSOP-8 package with PowerPAD™ (DGN), featuring a 3.00 mm × 3.00 mm footprint and exposed thermal pad. Its RθJA is 63°C/W - 44% lower than the SOIC-8 variant (112.6°C/W) - enabling 3 W continuous power dissipation at TA = 25°C. This makes the UCC27423QDGNRQ1 ideal for thermally dense automotive modules where board area and heat sinking are constrained.

How does the UCC27423QDGNRQ1 achieve high current at the Miller plateau?

The UCC27423QDGNRQ1 employs a unique bipolar-MOSFET hybrid output stage where bipolar transistors dominate current delivery near the Miller plateau (≈4–6 V), while MOSFETs handle low-voltage saturation. This architecture delivers full ±4-A peak current precisely where MOSFET switching losses are highest - reducing transition time and improving overall system efficiency compared to conventional CMOS-only drivers.

Is the UCC27423QDGNRQ1 qualified for automotive applications?

Yes, the UCC27423QDGNRQ1 is AEC-Q100 qualified for automotive use (Grade 1: –40°C to +125°C ambient), with HBM ESD rating of ±2000 V and CDM rating of ±1500 V. It is designed for under-hood applications including engine control units, ADAS power supplies, and EPS motor drivers - meeting stringent reliability, thermal, and electromagnetic robustness requirements defined in the AEC-Q100 standard.