Texas Instruments UCC27424DGNR

Overview

UCC27424DGNR from Texas Instruments is a dual-channel, non-inverting, low-side MOSFET driver in thermally enhanced MSOP-PowerPAD™ (DGN) package, delivering ±4-A peak output current per channel, 20-ns rise/15-ns fall time (1.8-nF load), and 4-V to 15-V supply operation - designed for high-efficiency gate driving in synchronous buck converters and motor control half-bridges.

For engineers reviewing the UCC27424DGNR datasheet, UCC27424DGNR pinout, UCC27424DGNR application, or UCC27424DGNR equivalent, key selection factors include dual non-inverting logic configuration, independent enable pins (ENBA/ENBB) with internal 100-kΩ pull-up, ±4-A Miller-region drive capability, thermal resistance of 56.6°C/W (R_θJA), and compatibility with 3.3-V/5-V logic inputs across full temperature range (–40°C to 125°C).

Technical Context

The UCC27424DGNR implements a bipolar-MOSFET hybrid output stage that concurrently sources and sinks high current during the MOSFET Miller plateau, minimizing switching losses. Its dual non-inverting topology ensures direct logic alignment between input and output states for both channels, eliminating external inversion logic in N-channel half-bridge topologies.

Each channel features independently controllable enable inputs (ENBA on Pin 1, ENBB on Pin 8), internally pulled up to VDD, supporting active-high operation without external biasing. Propagation delays are asymmetric: 35 ns (rising input) and 25 ns (falling input), enabling precise timing control in phase-shifted or interleaved power stages.

Key Specifications

Pinout & Package

UCC27424DGNR uses the thermally enhanced 8-pin MSOP-PowerPAD™ (DGN) package (3.00 mm × 3.00 mm), featuring an exposed thermal pad electrically connected to GND for low R_θJB = 32.6°C/W and improved long-term reliability in high-power-density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side MOSFET driver applications.

Compared with UCC27424DGNR, UCC27524ADGNR offers higher drive strength and integrated gate resistors for better EMI control, while LM5113SDX/NOPB serves different topology needs - neither is pin-compatible, and UCC27424DGNR remains optimal for cost-sensitive, dual-channel low-side-only applications with strict thermal constraints.

Availability

UCC27424DGNR is available at Aetrix Electronics and suitable for switch mode power supplies, motor controllers, and Class D amplifiers requiring stable component supply, consistent thermal performance, and long-lifecycle availability in thermally demanding environments.

Supply support for UCC27424DGNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability industrial and automotive components.

The UCC27424DGNR belongs to TI's high-speed MOSFET driver product line, engineered specifically for efficiency-critical, high-frequency power conversion systems where precise gate timing, thermal resilience, and robust noise immunity are mandatory.

FAQ

What logic configuration does the UCC27424DGNR implement?

The UCC27424DGNR implements a dual non-inverting output configuration: OUTA follows INA, and OUTB follows INB. This matches the UCC27424 family designation and distinguishes it from the inverting UCC27423 and mixed-logic UCC27425. The UCC27424DGNR is therefore ideal for driving two independent low-side N-channel MOSFETs without external inversion circuitry.

Does the UCC27424DGNR require external pull-up resistors on its enable pins?

No. The UCC27424DGNR has internal 100-kΩ pull-up resistors on ENBA (Pin 1) and ENBB (Pin 8), enabling active-high operation by default. Leaving these pins unconnected results in enabled outputs. However, in noisy environments, TI recommends tying them to VDD or adding a 0.1-µF capacitor to GND - not external pull-ups - to prevent false disable events.

Can the two outputs of the UCC27424DGNR be paralleled for higher current drive?

Yes. The UCC27424DGNR supports paralleling OUTA and OUTB to deliver up to ±8-A peak current into a single gate. This is explicitly supported in the datasheet and leverages matched propagation delays (<10 ns skew) and identical output stage design. Ensure symmetrical PCB layout and shared gate resistor to maintain current balance.

What is the thermal advantage of the DGN package used by the UCC27424DGNR?

The UCC27424DGNR's MSOP-PowerPAD™ (DGN) package achieves R_θJA = 56.6°C/W - 47% lower than the SOIC-8 (D) variant - due to its exposed thermal pad soldered to a large GND copper area. This reduces junction temperature rise under 4-A pulsed loads, improving reliability in enclosed or high-ambient-temperature applications where the UCC27424DGNR operates continuously near thermal limits.

Is the UCC27424DGNR compatible with 3.3-V microcontroller logic inputs?

Yes. The UCC27424DGNR features TTL/CMOS-compatible inputs with VIN_H = 1.6–2.5 V and VIN_L = 0.8–1.5 V across 4–15-V VDD, ensuring reliable recognition of 3.3-V logic highs and lows. Input hysteresis (0.15–0.90 V) further enhances noise immunity - a key design feature confirmed in the UCC27424DGNR's electrical characteristics table.