Texas Instruments UCC27424DR

Overview

UCC27424DR from Texas Instruments is a dual non-inverting low-side MOSFET driver IC delivering ±4 A peak output current per channel, 20-ns rise/15-ns fall times (1.8-nF load), and 4–15 V supply operation - designed for high-efficiency gate driving in synchronous buck converters and half-bridge motor control stages.

For engineers reviewing the UCC27424DR datasheet, UCC27424DR pinout, UCC27424DR application, or UCC27424DR equivalent, this page delivers verified electrical specs, thermal package data, enable-controlled dual-channel timing behavior, and real-world substitution guidance for power stage design validation.

Technical Context

The UCC27424DR implements dual independent non-inverting drivers with separate ENBA/ENBB inputs, each internally pulled up to VDD via 100 kΩ resistors for active-high operation. Its hybrid bipolar/MOSFET output stage delivers 4 A precisely at the Miller plateau region during MOSFET switching transitions, minimizing shoot-through risk while sustaining fast edge rates across 4–15 V supply range.

Input thresholds are TTL/CMOS-compatible (VIN_H = 1.6–2.5 V, VIN_L = 0.8–1.5 V) and voltage-independent; propagation delays are asymmetric (td1 = 25 ns rising, td2 = 35 ns falling), and outputs default low when disabled - critical for safe power-up sequencing in DC/DC and motor drive systems.

Key Specifications

Pinout & Package

UCC27424DR is packaged in SOIC-8 (D) with 4.90 mm × 3.91 mm body size and exposed pad not connected to any lead - optimized for PCB thermal relief in high-duty-cycle applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual non-inverting low-side MOSFET driver applications.

Compared with UCC27424DGNR, the UCC27424DR offers lower cost and standard SOIC layout compatibility but sacrifices 45% thermal resistance reduction; versus LM5112MG/NOPB, it provides integrated dual-channel control and enable functionality at the expense of peak speed - making UCC27424DR optimal for cost-sensitive, thermally moderate 100–500 kHz industrial power stages.

Availability

UCC27424DR is available at Aetrix Electronics and suitable for switch mode power supplies, DC/DC converters, and motor controllers requiring stable component supply, long-term industrial lifecycle support, and TI-authorized traceability.

Supply support for UCC27424DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with over 50 years of innovation in high-reliability power solutions.

The UCC27424DR belongs to TI's UCC2742x dual MOSFET driver family, engineered specifically for high-current, low-latency gate driving in industrial-grade power conversion and motor control systems operating from –40°C to 125°C.

FAQ

What is the maximum gate capacitance the UCC27424DR can drive while maintaining 20 ns rise time?

The UCC27424DR achieves 20 ns typical rise time with a 1.8-nF capacitive load per channel, as specified in the datasheet under recommended operating conditions. For loads exceeding 2.2 nF, rise time degrades linearly - e.g., at 4.7 nF, tr increases to ≈35 ns. To maintain ≤20 ns with larger MOSFETs, external gate resistors must be minimized and PCB layout optimized for lowest possible loop inductance. The UCC27424DR remains effective for Qg up to 120 nC when paired with ≤5 Ω external gate resistance.

Can the UCC27424DR drive P-channel MOSFETs on the high side?

No - the UCC27424DR is a dual non-inverting low-side driver; its outputs swing from GND to VDD and cannot source current above the supply rail. It is designed exclusively for N-channel MOSFETs configured as low-side switches. Driving P-channel high-side devices requires either an inverting driver (e.g., UCC27423DR) or a dedicated high-side driver with floating bias capability (e.g., UCC27201A). Using UCC27424DR for high-side P-MOSFETs would result in incomplete turn-on and excessive conduction loss.

How does the enable function behave during power-up when ENBA and ENBB are left unconnected?

When ENBA (Pin 1) and ENBB (Pin 8) are left floating, internal 100 kΩ pull-up resistors connect them to VDD, resulting in active-high enable states - so both outputs (OUTA and OUTB) become operational immediately after VDD reaches valid logic threshold (~3.5 V). This matches standard industry behavior and ensures seamless power-up in most SMPS and motor control applications. However, in noisy environments, floating enables may cause false triggering; TI recommends tying unused enables to VDD or adding a 0.1 µF capacitor to GND for immunity.

Is the UCC27424DR pin-compatible with the older UCC27324?

Yes - the UCC27424DR maintains identical SOIC-8 pinout and electrical interface with the UCC27324, including shared VDD, GND, INA, INB, OUTA, and OUTB positions. Pins 1 and 8 (formerly no-connect on UCC27324) are repurposed as ENBA and ENBB in UCC27424DR, but their internal pull-up allows legacy designs to operate unchanged. No PCB modification is required for drop-in replacement, and all timing, drive strength, and thermal specs are improved in UCC27424DR.

What is the minimum supply voltage required for reliable TTL-level input recognition on the UCC27424DR?

The UCC27424DR guarantees TTL-compatible input thresholds down to VDD = 4 V: VIN_H remains ≤2.5 V and VIN_L ≥0.8 V across the full –40°C to 125°C temperature range. At 4 V supply, logic '1' is recognized at ≥1.6 V and logic '0' at ≤1.5 V, preserving noise margin even with 3.3 V microcontroller outputs. Below 4 V, operation is outside recommended conditions and may cause undefined output states or increased propagation delay variation - the absolute minimum VDD is 4 V per datasheet Section 6.3.