Texas Instruments UCC27425DR

Overview

UCC27425DR from Texas Instruments is a dual low-side MOSFET driver with one inverting (OUTA) and one non-inverting (OUTB) output channel, delivering ±4 A peak gate drive current, 20-ns rise/15-ns fall times (1.8-nF load), and 4–15-V supply operation - used to drive N- and P-channel power MOSFETs in synchronous buck, half-bridge, and motor control stages.

For engineers reviewing the UCC27425DR datasheet, UCC27425DR pinout, UCC27425DR application, or UCC27425DR equivalent, key selection considerations include enable-controlled dual-channel logic configuration, Miller-region current delivery, thermal performance in MSOP-PowerPAD™, and compatibility with 3.3-V/5-V PWM controllers.

Technical Context

The UCC27425DR implements a unique bipolar-MOSFET hybrid output stage that delivers high sourcing/sinking current precisely at the MOSFET Miller plateau, minimizing switching losses. Its dual independent enable inputs (ENBA/ENBB) support per-channel activation with internal 100-kΩ pull-ups and 0.15–0.9-V hysteresis for noise immunity.

Input thresholds are TTL/CMOS-compatible across 4–15-V VDD, with VIN_H = 1.6–2.5 V and VIN_L = 0.8–1.5 V; propagation delays are asymmetric (td1 = 25 ns rising, td2 = 35 ns falling), and outputs swing rail-to-rail with ROH = 1.2–2.5 Ω and ROL = 0.7–1.2 Ω.

Key Specifications

Pinout & Package

UCC27425DR is packaged in an 8-pin SOIC (D) with 4.90 mm × 3.91 mm body size and exposed thermal pad (PowerPAD™ not present in SOIC-D). The device uses industry-standard pinout with dual enable inputs added to unused pins 1 and 8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side MOSFET driver applications.

Compared with UCC27425DR, UCC27425DGNR offers superior thermal performance in compact layouts, while UCC27524ADR trades enable flexibility and mixed logic for higher drive strength and lower cost in dedicated N-channel applications.

Availability

UCC27425DR is available at Aetrix Electronics and suitable for switch mode power supplies, motor controllers, DC/DC converters, and Class D switching amplifiers requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for UCC27425DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, designing and manufacturing analog ICs, embedded processors, and power management solutions for industrial, automotive, and communications markets.

The UCC2742x family was developed specifically for high-efficiency, high-frequency power conversion systems requiring robust, low-latency gate drive with flexible logic configuration and thermal resilience.

FAQ

What logic configuration does the UCC27425DR implement?

The UCC27425DR implements one inverting output (OUTA) and one non-inverting output (OUTB), enabling direct drive of complementary P-channel and N-channel MOSFETs in half-bridge or synchronous rectifier configurations. This differs from UCC27423DR (dual inverting) and UCC27424DR (dual non-inverting). The UCC27425DR truth table confirms OUTA = NOT(INA) and OUTB = INB when both ENBA and ENBB are high.

Does the UCC27425DR require external pull-up resistors on ENBA and ENBB?

No, the UCC27425DR does not require external pull-up resistors on ENBA and ENBB because both pins feature internal 100-kΩ pull-up resistors to VDD, enabling active-high operation by default. Leaving ENBA and ENBB unconnected results in enabled operation; tying them low disables the respective output to low state regardless of input signal. External filtering (e.g., 0.1-µF capacitor to GND) is recommended only in high-noise environments.

Can the UCC27425DR drive both N-channel and P-channel MOSFETs simultaneously?

Yes, the UCC27425DR is explicitly designed to drive both N-channel and P-channel MOSFETs simultaneously: OUTB (non-inverting) drives N-channel gates referenced to ground, while OUTA (inverting) drives P-channel gates referenced to the high-side rail. The datasheet confirms this use case in Figure 8-1 and Section 7.3.3, noting that OUTA of UCC27425DR is intended for P-channel devices and OUTB for N-channel devices.

What is the maximum capacitive load the UCC27425DR can drive while maintaining specified rise/fall times?

The UCC27425DR's 20-ns rise and 15-ns fall times are specified with a 1.8-nF capacitive load. While the device can drive larger loads (e.g., >5 nF), timing degrades linearly with capacitance - e.g., rise time increases to ~40 ns at 10 nF. For loads exceeding 2.2 nF, adding a small series gate resistor (≤5 Ω) is recommended to dampen ringing without significantly impacting switching speed, as confirmed in Section 7.3.3 of the UCC27425DR datasheet.

Is the UCC27425DR pin-compatible with earlier TI drivers like the UCC27324?

Yes, the UCC27425DR maintains industry-standard SOIC-8 pinout compatibility with the UCC27324 and other legacy drivers, with ENBA and ENBB placed on previously unused pins 1 and 8. This allows direct replacement in existing designs without PCB modification. However, note that UCC27324 lacks enable functionality and has dual non-inverting outputs only, so logic behavior differs unless ENBA/ENBB are left floating and unused.