Texas Instruments UCC27444DGNR

Overview

UCC27444DGNR from Texas Instruments is a dual-channel, low-side MOSFET/GaN gate driver IC with 4-A peak source/sink current per channel, –5-V input tolerance on INA/INB, and 18-ns typical propagation delay. It operates from 4.5 V to 18 V VDD and supports high-frequency switched-mode power supplies requiring precise timing and noise immunity.

For engineers reviewing the UCC27444DGNR datasheet, UCC27444DGNR pinout, UCC27444DGNR application, or UCC27444DGNR equivalent, this page delivers verified package mapping (VSSOP-8), confirmed dual-enable logic, real-world timing specs (1-ns typical delay matching), thermal resistance (RθJA = 57.3°C/W), and validated alternatives for PFC, DC/DC, and inverter designs.

Technical Context

The UCC27444DGNR implements independent TTL-compatible input stages with fixed 1.2 V/2.2 V thresholds and internal 100-kΩ pullups on ENA/ENB, enabling direct interfacing with 3.3-V/5-V controllers without level shifting. Its P-channel/N-channel MOS output stage delivers rail-to-rail drive with 1.2 Ω pullup and 0.7–1.2 Ω pulldown resistance.

It features power-on reset (POR) with 2.1–4.0 V rising threshold and robust transient handling: outputs withstand ±4-A reverse current pulses and tolerate –2 V to VDD+0.3 V at OUTA/OUTB under 100-ns pulses. The device supports symmetrical transformer drive via complementary INx inputs and matched channels for paralleled MOSFET control.

Key Specifications

Pinout & Package

VSSOP-8 (DGN) package: 3.00 mm × 3.00 mm body, exposed thermal pad connected to GND for enhanced heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side gate driver applications.

Compared with UCC27444DGNR, UCC27524ADGNR trades –5-V input robustness for higher peak current and faster timing, while LM5113SDX/NOPB sacrifices drive strength and speed to integrate bootstrap functionality-making UCC27444DGNR optimal for noise-immune, high-frequency dual low-side control.

Availability

UCC27444DGNR is available at Aetrix Electronics and suitable for switched-mode power supplies, power factor correction circuits, and AC inverters requiring stable component supply, consistent thermal performance, and long-term industrial lifecycle support.

Supply support for UCC27444DGNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power IC design.

The UCC27444DGNR belongs to TI's high-speed gate driver product line, engineered specifically for high-efficiency, high-frequency power conversion systems including PFC, DC/DC, and motor drives.

FAQ

What is the maximum allowable negative voltage on the INA and INB pins of the UCC27444DGNR?

The UCC27444DGNR specifies an absolute maximum input voltage of –5 V on INA and INB pins. This rating is validated per datasheet Section 6.1 and enables reliable operation in systems with significant ground bounce-such as high-current PFC stages-without external clamping components. Exceeding –5 V risks permanent damage to the input structure.

Does the UCC27444DGNR support rail-to-rail output swing, and what is its output voltage range?

Yes, the UCC27444DGNR provides true rail-to-rail output swing: OUTA and OUTB drive from GND to VDD (0 V to 18 V max). This is achieved via complementary P-channel/N-channel MOS output stages, delivering low dropout and enabling direct connection to power device gates without level-shifting circuitry. Output voltage remains within 0.1 V of rails under full 4-A load.

How does the enable function work on the UCC27444DGNR, and what happens if ENA or ENB is left unconnected?

The UCC27444DGNR features independent active-high enable pins (ENA and ENB) with internal 100-kΩ pullup resistors to VDD. If either pin is left floating, the corresponding channel defaults to enabled. Pulling ENA or ENB low disables its respective output regardless of the INA/INB state-enabling fast fault shutdown. This behavior is confirmed in Table 5-1 and Section 7.3.3 of the datasheet.

What thermal performance can be expected from the UCC27444DGNR in a standard PCB layout?

In a typical 2-layer PCB with 1-in² 2-oz copper GND plane connected to the thermal pad, the UCC27444DGNR achieves RθJA = 57.3°C/W (per Section 6.4). At 100-mA average output current and 12-V VDD, junction temperature rise stays below 60°C above ambient-well within the –40°C to 125°C operating range. Thermal pad soldering is mandatory for this performance.

Can the UCC27444DGNR drive GaN power switches, and what design considerations apply?

Yes, the UCC27444DGNR is explicitly qualified for GaN FETs per its 4-A peak drive, 11-ns rise time, and –5-V input tolerance. Key considerations include using low-inductance gate loops, selecting gate resistors to damp ringing (typically 2.2–10 Ω), and ensuring VDD bypassing meets the 1-μF + 0.1-μF requirement to maintain clean drive waveforms at >1-MHz switching frequencies.