Texas Instruments UCC27444QDGNRQ1
- Part No.:
- UCC27444QDGNRQ1
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
UCC27444QDGNRQ1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8HVSSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
UCC27444QDGNRQ1 from Texas Instruments is a dual-channel, automotive-grade, low-side gate driver IC designed to drive MOSFETs and GaN power switches in high-frequency switching stages. It delivers 4-A peak source/sink current per channel, features 18-ns typical propagation delay and 1-ns typical inter-channel delay matching, and operates across 4.5 V to 18 V VDD with –5-V input tolerance - enabling robust operation in noisy automotive PFC and DC/DC converter power stages.
For engineers reviewing the UCC27444QDGNRQ1 datasheet, UCC27444QDGNRQ1 pinout, UCC27444QDGNRQ1 application, or UCC27444QDGNRQ1 equivalent, key selection considerations include its AEC-Q100 Grade 1 qualification (–40°C to +125°C), independent ENA/ENB enable control, rail-to-rail output swing, and VSSOP-8 PowerPAD™ package optimized for thermal performance in space-constrained automotive power modules.
Technical Context
The UCC27444QDGNRQ1 implements a dual independent low-side driver architecture with TTL-compatible input thresholds (1.2 V low / 2.2 V high) and fixed enable thresholds (1.1–2.2 V), both independent of VDD. Its P-channel pull-up/N-channel pull-down output stage delivers rail-to-rail swing and withstands 4-A reverse current transients - critical for gate-transformer-coupled or ground-bounce-prone topologies.
Each channel integrates independent enable logic with internal 100-kΩ pullup resistors, supporting floating-enable default operation and direct pin compatibility with legacy TI drivers (e.g., UCC27524). The device includes power-on-reset (POR) with 2.1–4.0 V hysteresis, holding outputs low during undervoltage conditions to prevent unintended switch turn-on.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Range | 4.5 V to 18 V - supports wide-input automotive battery and auxiliary rail systems without external regulation. |
| Peak Drive Current | ±4 A per channel - reduces MOSFET/GaN switch rise/fall times, lowers switching losses, and enables >1-MHz operation. |
| Propagation Delay | 18 ns typical - improves dead-time optimization, pulse-width utilization, and transient response in closed-loop SMPS. |
| Delay Matching | 1 ns typical between channels - ensures simultaneous turn-on of paralleled power devices in PFC or phase-shifted converters. |
| Input Voltage Range | –5 V to VDD+0.3 V - tolerates ground bounce and enables direct connection to gate-drive transformers without rectifier diodes. |
| Operating Temp | –40°C to +125°C junction - meets AEC-Q100 Grade 1 requirements for under-hood automotive power electronics. |
| POR Threshold | 2.1–4.0 V rising threshold with 0.3-V hysteresis - guarantees glitch-free startup and controlled shutdown during brownout. |
Pinout & Package
VSSOP-8 PowerPAD™ package (3.00 mm × 3.00 mm) with exposed thermal pad connected to GND for enhanced power dissipation in high-current automotive applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| ENA (Pin 1) | Channel A enable input | Active-high TTL input; internal 100-kΩ pullup enables default operation when floating - allows simplified layout and backward compatibility. |
| INA (Pin 2) | Channel A non-inverting input | Accepts –5 V to VDD+0.3 V; compatible with 3.3-V/5-V controllers and gate-drive transformers without level-shifting. |
| GND (Pin 3) | Power and signal reference | Primary return path for all currents; thermal pad must be soldered to large copper plane for thermal management. |
| INB (Pin 4) | Channel B non-inverting input | Functionally identical to INA; supports complementary or independent drive signals for dual-switch topologies. |
| OUTB (Pin 5) | Channel B output | Rail-to-rail (GND to VDD) low-impedance output with ±4-A peak capability - drives gate capacitance directly without external buffers. |
| VDD (Pin 6) | Bias supply input | Requires ≥1 µF + 0.1 µF ceramic bypassing to GND; absolute max 20 V - supports transient overvoltage resilience. |
| OUTA (Pin 7) | Channel A output | Matched timing and drive strength to OUTB; 1-ns delay matching enables precise synchronous control of paralleled FETs. |
| ENB (Pin 8) | Channel B enable input | Independent enable control permits dynamic channel disablement - e.g., light-load synchronous rectifier shutdown for efficiency improvement. |
Key Features
| Feature | Design Value |
|---|---|
| –5-V Input Capability | Enables direct interface with gate-drive transformers and survives ground bounce up to 5 V below system GND - eliminates need for clamping diodes or level shifters. |
| 18-ns Propagation Delay | Reduces control-to-power-device latency, improving loop bandwidth and transient response in high-frequency digital power supplies. |
| 1-ns Channel Delay Matching | Minimizes timing skew between paralleled power devices - critical for balanced current sharing and reduced EMI in multi-phase PFC and inverters. |
| VDD POR Protection | Holds both outputs low until VDD exceeds 2.1 V - prevents partial turn-on and shoot-through during power-up/down sequences. |
| Independent ENA/ENB Control | Allows per-channel fault isolation and dynamic power-stage reconfiguration - e.g., disabling one leg during soft-start or fault recovery. |
| TTL-Compatible Inputs | Fixed 1.2 V / 2.2 V thresholds independent of VDD - ensures reliable interfacing with 3.3-V microcontrollers and digital PWM controllers without voltage scaling. |
Applications
| On-Board Charger (OBC) | Automotive DC/DC Converter |
|---|---|
|
Use Scenario: Dual-channel gate driving for interleaved boost PFC and LLC resonant stages in 3.3 kW–6.6 kW EV on-board chargers. IC Role / Device Role: Low-side driver for two parallel SiC MOSFET half-bridges, synchronized via shared controller PWM and independent EN pins for phase management. Use Value: 1-ns delay matching ensures balanced current sharing across phases; –5-V input tolerance maintains reliability during high-dV/dt switching transitions in compact magnetic layouts. |
Use Scenario: Driving synchronous rectifier FETs in isolated 48 V–12 V bidirectional DC/DC converters for 48 V mild-hybrid architectures. IC Role / Device Role: Dual low-side driver controlling SR FETs on secondary side, with ENB used to disable rectification during light-load burst-mode operation. Use Value: 4-A peak sink current rapidly discharges SR FET gate capacitance, minimizing body-diode conduction loss; POR prevents false turn-on during cold-cranking voltage dips. |
| EV Traction Inverter Auxiliary Supply | Automotive AC Inverter for HVAC Compressor |
|
Use Scenario: Gate driving for 12 V auxiliary power supply (APS) using active clamp flyback topology in traction inverter subsystems. IC Role / Device Role: Dual low-side driver operating OUTA/OUTB in push-pull configuration to drive center-tapped transformer primary. Use Value: Rail-to-rail output swing and reverse current tolerance allow direct transformer coupling without snubbers; fast 11-ns rise time supports >500 kHz switching for compact magnetics. |
Use Scenario: Driving IGBTs or SiC MOSFETs in 3-phase motor drives for electric HVAC compressors in battery electric vehicles. IC Role / Device Role: Low-side driver for three half-bridge legs (using two UCC27444QDGNRQ1s), with independent EN control enabling safe pre-charge and fault shutdown sequencing. Use Value: AEC-Q100 Grade 1 rating ensures operation at 125°C ambient; 18-ns propagation delay tightens timing margins for field-oriented control (FOC) algorithms running at >20 kHz PWM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADGNR | Non-automotive grade; AEC-Q100 unqualified; same pinout, 4-A drive, but only rated for –40°C to +105°C ambient. | Lacks automotive qualification, POR hysteresis, and CDM ESD level C6 - unsuitable for safety-critical or under-hood deployment. | Select only for cost-sensitive industrial or consumer DC/DC where AEC-Q100 is not required. |
| LM5113SDX/NOPB | Single-channel, 5-A peak drive, 12-V max VDD, no –5-V input support; SOIC-8 only, no VSSOP option. | Requires two units for dual-channel use; lacks independent enable and delay-matching specs - increases BOM count and timing uncertainty. | Consider only when higher peak current (>4 A) is mandatory and automotive qualification is secondary to drive strength. |
Compared with UCC27444QDGNRQ1, UCC27524ADGNR offers identical functionality at lower cost but fails automotive qualification, while LM5113SDX/NOPB provides higher peak current but doubles component count and sacrifices channel timing precision - making UCC27444QDGNRQ1 the optimal choice for AEC-Q100-compliant dual-channel, timing-critical automotive power stages.
Availability
UCC27444QDGNRQ1 is available at Aetrix Electronics and suitable for automotive on-board chargers, traction inverter auxiliary supplies, and 48 V–12 V DC/DC converters requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant sourcing.
Supply support for UCC27444QDGNRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and automotive electronics, with decades of expertise in high-reliability power management ICs.
The UCC27444QDGNRQ1 belongs to TI's automotive-qualified gate driver portfolio, engineered specifically for high-efficiency, high-density power conversion in electric vehicle subsystems - emphasizing robustness, precision timing, and seamless integration with digital controllers.
FAQ
What is the maximum allowable VDD voltage for UCC27444QDGNRQ1?
The absolute maximum VDD voltage for UCC27444QDGNRQ1 is 20 V, as specified in Section 6.1 of the datasheet. Operation beyond this limit risks permanent damage. For reliable long-term operation, the recommended VDD range is 4.5 V to 18 V - supporting automotive battery transients while maintaining full drive strength and timing specifications across the entire range. UCC27444QDGNRQ1 incorporates internal protection to tolerate short-duration 20-V spikes, but sustained bias above 18 V is not advised.
Does UCC27444QDGNRQ1 support negative input voltages, and why is that important?
Yes, UCC27444QDGNRQ1 supports –5 V on INA and INB inputs, a feature explicitly documented in its Absolute Maximum Ratings and Applications section. This capability is critical in automotive environments where ground bounce during high-dI/dt switching can pull local ground references several volts below system ground - potentially causing logic errors or latch-up in standard drivers. UCC27444QDGNRQ1's –5-V tolerance ensures reliable operation without external clamping, simplifying design and improving system robustness in PFC and inverter stages.
How does the enable function work on UCC27444QDGNRQ1, and what happens if ENA or ENB is left unconnected?
ENA and ENB are active-high enable inputs with internal 100-kΩ pullup resistors to VDD. When either pin is pulled low, its corresponding output (OUTA or OUTB) is forced low regardless of the INx state. If left floating, the internal pullup holds the pin high, enabling normal input-controlled operation - a design choice that ensures default functionality and pin compatibility with legacy TI drivers like UCC27524. This behavior is confirmed in Table 5-1 and Section 7.3.3 of the UCC27444QDGNRQ1 datasheet.
What thermal considerations apply to UCC27444QDGNRQ1 in the VSSOP-8 PowerPAD™ package?
UCC27444QDGNRQ1 in the VSSOP-8 PowerPAD™ package requires the exposed thermal pad to be soldered to a large GND copper plane to achieve its specified RθJB of 30.5°C/W. Without proper thermal land design, junction temperature can exceed 125°C under 4-A peak load, triggering thermal shutdown or degrading reliability. Layout guidelines in Section 10.2 mandate minimum 12 mm² thermal pad area with ≥4 thermal vias to inner GND layers - a requirement validated by TI's thermal characterization data in Section 6.4.
Is UCC27444QDGNRQ1 pin-compatible with earlier TI gate drivers, and which ones?
Yes, UCC27444QDGNRQ1 is pin-compatible with UCC27524ADGNR and UCC27424DGNR in the VSSOP-8 package, as confirmed in Section 7.3.3 and Table 7-1 of the datasheet. This compatibility relies on identical pin mapping (ENA/INA/GND/INB/OUTB/VDD/OUTA/ENB) and shared enable-default behavior via internal pullups. However, UCC27444QDGNRQ1 adds –5-V input capability, tighter delay matching (1 ns vs. 3 ns), and AEC-Q100 qualification - enhancements that do not affect footprint or basic connectivity.
UCC27444QDGNRQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- -
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 18V
- Logic Voltage - VIL, VIH:
- 1.5V, 1.6V
- Current - Peak Output (Source, Sink):
- 4A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 11ns, 7ns
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HVSSOP
UCC27444QDGNRQ1 FAQ
1.How can I place an order for UCC27444QDGNRQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for UCC27444QDGNRQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of UCC27444QDGNRQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC27444QDGNRQ1 is usually 5 days.
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5.How can I obtain technical support or documentation for UCC27444QDGNRQ1?
For technical support, including UCC27444QDGNRQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC27444QDGNRQ1 requirements.
6.How does Aetrix verify that UCC27444QDGNRQ1 is sourced from the original manufacturer or authorized distributors?
All UCC27444QDGNRQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC27444QDGNRQ1 meets industry standards.
7.What is the process for return or replacement of UCC27444QDGNRQ1?
All UCC27444QDGNRQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UCC27444QDGNRQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UCC27444QDGNRQ1 part is unused and in its original packaging.
Return procedure for UCC27444QDGNRQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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