Texas Instruments UCC27512DRST

Overview

UCC27512DRST from Texas Instruments is a single-channel, high-speed, low-side MOSFET/IGBT gate driver in a 6-pin 3-mm × 3-mm WSON package, delivering 4-A peak source and 8-A peak sink current, with 13-ns typical propagation delay and 4.5-V to 18-V supply range. It drives GaN power switches in DC-DC converters and solar inverters.

For engineers reviewing the UCC27512DRST datasheet, UCC27512DRST pinout, UCC27512DRST application, or UCC27512DRST equivalent, key selection criteria include asymmetrical drive strength, UVLO behavior, thermal resistance (θJA = 85.6°C/W), input hysteresis for noise immunity, and dual-input logic flexibility for enable/disable functions.

Technical Context

The UCC27512DRST uses a dual-input architecture supporting both inverting (IN−) and noninverting (IN+) configurations, with unused input usable as enable/disable control. Its output stage features independent pull-up (ROH ≈ 5–7.5 Ω) and pull-down (ROL ≈ 0.375–0.75 Ω) paths optimized for Miller immunity.

Internal undervoltage lockout (UVLO) holds OUT low below 3.7 V (rising) and releases above 4.2 V, ensuring glitch-free startup. Input thresholds are TTL/CMOS-compatible (VIN_H = 2.2–2.4 V, VIN_L = 1.0–1.2 V) with 1.0-V hysteresis, independent of VDD.

Key Specifications

Pinout & Package

UCC27512DRST uses a thermally enhanced 6-pin WSON (DRS) package with exposed thermal pad (3.00 mm × 3.00 mm). Pin 1 is IN+, Pin 2 and Pin 5 are GND (both must be connected to PCB ground plane), Pin 3 is VDD, Pin 4 is OUT, Pin 6 is IN−.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27511DBVR, UCC27512DRST provides 2.5× lower thermal resistance and integrated single-output simplicity; versus LM5113SDX/NOPB, it delivers tighter timing control, built-in UVLO hysteresis, and direct 3.3-V logic compatibility without level-shifting.

Availability

UCC27512DRST is available at Aetrix Electronics and suitable for switched-mode power supplies, solar inverters, and motor control systems requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for UCC27512DRST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management ICs for industrial, automotive, and communications markets.

The UCC2751x family was designed specifically for high-frequency, high-efficiency power conversion-targeting digital power controllers, GaN/SiC gate driving, and compact DC-DC modules demanding fast, robust, and thermally efficient low-side drive.

FAQ

What is the maximum allowable VDD voltage for the UCC27512DRST?

The absolute maximum VDD voltage for the UCC27512DRST is 20 V, as specified in the Absolute Maximum Ratings table. However, the recommended operating range is 4.5 V to 18 V. Operation above 18 V may compromise long-term reliability and is not guaranteed across temperature or process variations. The UCC27512DRST includes internal protection that clamps transient overvoltage on VDD, but sustained operation beyond 18 V is not advised.

Does the UCC27512DRST support both inverting and noninverting configurations?

Yes, the UCC27512DRST supports both configurations via its dual-input design: assert IN− to achieve inverting behavior (OUT low when IN− high), or assert IN+ for noninverting behavior (OUT high when IN+ high). The unused input must be biased-IN− tied to GND or IN+ tied to VDD-to prevent floating and ensure predictable output. This flexibility eliminates need for external inverters in many digital power controller interfaces.

How does the UCC27512DRST handle floating input pins?

The UCC27512DRST incorporates internal pullup on IN− and pulldown on IN+, ensuring the output remains low when either input is left unconnected. This fail-safe behavior prevents unintended gate turn-on during power-up, standby, or controller reset. For reliable operation, TI recommends explicitly biasing the unused input rather than relying solely on internal resistors-especially in noisy environments where leakage or ESD could perturb the weak internal network.

What is the thermal performance difference between UCC27512DRST and UCC27511DBVR?

The UCC27512DRST has a junction-to-ambient thermal resistance (θJA) of 85.6°C/W in its 3-mm × 3-mm WSON package, compared to 217.8°C/W for the UCC27511DBVR in SOT-23-6. This 2.5× improvement allows the UCC27512DRST to dissipate ~2.5× more power at the same temperature rise, making it suitable for higher-current or higher-frequency applications where thermal headroom is critical-such as 1-MHz GaN DC-DC converters with >1-W driver losses.

Can the UCC27512DRST drive GaN power devices effectively?

Yes, the UCC27512DRST is explicitly qualified for GaN power device driving: its 4.5-V minimum VDD supports common GaN gate thresholds, 13-ns propagation delay enables sub-100-ns dead-time control, and strong 8-A sink current suppresses Miller-induced turn-on in high-dV/dt GaN half-bridges. TI's application notes confirm successful use with EPC and Transphorm GaN FETs in 48-V to 12-V telecom DC-DC converters operating up to 1 MHz.