Texas Instruments UCC27516DRSR

Overview

UCC27516DRSR from Texas Instruments is a single-channel, high-speed, low-side MOSFET/IGBT gate driver IC with symmetrical 4-A peak source/sink drive capability, 13-ns typical propagation delay, and 4.5 V to 18 V VDD operating range. It features dual-input logic (IN+ noninverting, IN− inverting), TTL/CMOS-compatible voltage-independent thresholds, and UVLO protection - deployed in GaN-based DC-DC converters and solar inverters for reliable high-frequency switching.

For engineers reviewing the UCC27516DRSR datasheet, UCC27516DRSR pinout, UCC27516DRSR application, or UCC27516DRSR equivalent, key selection considerations include its 6-pin WSON package with exposed thermal pad, rail-to-rail output swing, input hysteresis for noise immunity, and enable/disable flexibility via unused input pin - critical for robust power stage control in industrial and energy systems.

Technical Context

The UCC27516DRSR uses a shoot-through-minimized output stage architecture delivering symmetrical 4-A source/sink current into capacitive loads at 12 V VDD. Its dual-input design supports both inverting and noninverting configurations without external components, with internal pullup/pulldown resistors ensuring safe low-state output during floating inputs.

UVLO circuitry activates below 3.7 V (rising) and releases above 4.2 V (typical), with 300-mV hysteresis preventing chatter during supply transients. Input thresholds are fixed at ~2.2 V (high) and ~1.2 V (low), independent of VDD, enabling direct interfacing with 3.3-V and 5-V microcontrollers and digital power controllers.

Key Specifications

Pinout & Package

UCC27516DRSR is housed in a thermally enhanced 6-pin WSON (DRS) package measuring 3.00 mm × 3.00 mm with an exposed thermal pad for improved power dissipation. The package supports solder-reflow assembly and provides low R_θJA of 85.6°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27517DBV, UCC27516DRSR offers independent IN+/IN− control and superior thermal performance (R_θJA = 85.6°C/W vs 217.6°C/W); compared with LM5113SDX, it delivers higher peak current and simpler single-channel integration but lacks half-bridge features.

Availability

UCC27516DRSR is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, GaN-based solar inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for UCC27516DRSR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability power solutions.

The UCC27516DRSR belongs to TI's UCC2751x family of high-speed low-side gate drivers, engineered specifically for emerging wide-bandgap power devices like GaN and SiC - emphasizing ultra-low propagation delay, robust noise immunity, and safe fail-safe behavior in mission-critical power stages.

FAQ

What is the maximum operating junction temperature for the UCC27516DRSR?

The UCC27516DRSR is rated for an operating junction temperature range of –40°C to +140°C. This specification is validated per JEDEC JESD22-A104 and confirmed in the device's thermal characterization data (R_θJA = 85.6°C/W). The UCC27516DRSR maintains full electrical performance across this range, making it suitable for under-hood automotive and industrial motor drive applications where ambient temperatures exceed 105°C.

Does the UCC27516DRSR support both inverting and noninverting configurations?

Yes, the UCC27516DRSR supports both configurations via its dual-input architecture: apply PWM to IN+ for noninverting operation (OUT follows IN+), or to IN− for inverting operation (OUT opposes IN−). The unused input must be biased - tie IN− to GND for noninverting mode, or IN+ to VDD for inverting mode. This flexibility eliminates external inverters and enables dynamic reconfiguration in firmware-controlled power stages using the UCC27516DRSR.

What is the purpose of the two GND pins (pins 2 and 3) on the UCC27516DRSR?

The UCC27516DRSR features two dedicated GND pins (pins 2 and 3) to separate high-current return paths from sensitive input reference paths, reducing ground bounce and improving noise immunity. TI recommends connecting both pins to a solid ground plane with minimal trace length and via stitching near the package. This layout practice is essential to preserve the UCC27516DRSR's 13-ns propagation delay accuracy and prevent false triggering in high-dV/dt environments.

Can the UCC27516DRSR drive GaN power devices effectively?

Yes, the UCC27516DRSR is explicitly designed for GaN FETs: its 4-A peak sink current suppresses Miller-induced turn-on, its 4.5-V minimum VDD enables direct interface with low-voltage GaN gate drivers, and its 13-ns propagation delay supports >1-MHz switching. TI's application note SLUA929 confirms UCC27516DRSR performance with EPC2016 and GS66508T GaN devices - validating sub-20-ns total system dead-time when paired with appropriate gate resistors and layout.

Is the input voltage rating of the UCC27516DRSR limited by the VDD supply voltage?

No - the UCC27516DRSR input pins (IN+ and IN−) tolerate voltages from –0.3 V to 20 V regardless of VDD level, as confirmed in Section 8.1 Absolute Maximum Ratings. This allows direct connection to auxiliary control signals (e.g., 12-V enable lines or isolated PWM outputs) without level-shifting, simplifying system architecture and enhancing robustness in multi-rail power systems using the UCC27516DRSR.