Texas Instruments UCC27523DGN

Overview

UCC27523DGN from Texas Instruments is a dual-channel, low-side gate driver IC designed to drive MOSFETs and IGBTs in high-frequency power stages. It delivers 5A peak source/sink current per channel, features 13ns typical propagation delay, 1ns typical inter-channel delay matching, and operates from 4.5V to 18V supply across –40°C to 140°C - enabling robust GaN-based DC-DC converter and motor control designs.

For engineers reviewing the UCC27523DGN datasheet, UCC27523DGN pinout, UCC27523DGN application, or UCC27523DGN equivalent, key selection criteria include independent enable control per channel, TTL/CMOS-compatible logic thresholds independent of VDD, UVLO-protected glitch-free startup, and HVSSOP-8 (DGN) thermal performance with exposed pad.

Technical Context

The UCC27523DGN implements two independent inverting-input gate-drive channels with dedicated ENA/ENB pins. Its internal architecture minimizes shoot-through current and ensures rail-to-rail output swing while maintaining matched propagation delays (1ns typical) critical for synchronous rectifier timing.

Input thresholds are fixed at 1.2V (low) and 2.1V (high) with 0.9V hysteresis, decoupled from VDD voltage - allowing direct interface with 3.3V or 5V controllers. Outputs remain low during VDD UVLO (4.2V turn-on threshold, 0.3V hysteresis) and when inputs float, ensuring fail-safe operation at power-up/down.

Key Specifications

Pinout & Package

HVSSOP-8 (DGN) package with 3.00mm × 3.00mm body size and exposed thermal pad for enhanced power dissipation (R_θJA = 71.8°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27524DGN and UCC27525DGN, the UCC27523DGN provides consistent dual inverting logic - simplifying design when both channels require inverted PWM inputs, eliminating need for discrete inverters or controller firmware rework.

Availability

UCC27523DGN is available at Aetrix Electronics and suitable for switched-mode power supplies, motor control systems, and GaN-based DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for UCC27523DGN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog and embedded processing solutions, with over 50 years of power management innovation and broad portfolio coverage.

The UCC2752x family was engineered specifically for high-frequency, high-reliability gate driving in next-generation power conversion - targeting GaN/SiC adoption, compact industrial SMPS, and automotive electrification subsystems.

FAQ

What is the logic configuration of the UCC27523DGN inputs?

The UCC27523DGN features dual inverting inputs: INA controls OUTA with inversion, and INB controls OUTB with inversion. This configuration allows direct connection to standard PWM controllers that output active-high gate signals, where the driver inverts them to produce active-low gate drive for low-side switches. The UCC27523DGN maintains this behavior across its full operating temperature and supply range.

Does the UCC27523DGN support parallel operation of its two output channels?

Yes, the UCC27523DGN supports paralleling OUTA and OUTB to deliver up to 10A peak drive current. Its 1ns typical inter-channel delay matching ensures simultaneous switching, minimizing transient imbalances. To implement parallel mode, connect OUTA and OUTB together, drive both INA and INB with the same signal, and tie ENA and ENB high - the UCC27523DGN's matched internal structure makes this configuration electrically robust.

How does the UCC27523DGN behave during power-up and brown-out conditions?

The UCC27523DGN incorporates undervoltage lockout (UVLO) with 4.2V turn-on and 3.9V turn-off thresholds. During power-up, both OUTA and OUTB remain firmly low until VDD exceeds 4.2V; during brown-out, outputs stay low until VDD drops below 3.9V. This behavior - guaranteed across –40°C to 140°C - prevents partial gate turn-on and ensures glitch-free startup/shutdown in the UCC27523DGN.

What thermal performance can be expected from the UCC27523DGN in HVSSOP-8 (DGN) package?

In the HVSSOP-8 (DGN) package, the UCC27523DGN achieves R_θJA = 71.8°C/W with standard JEDEC 2-layer board layout and soldered exposed pad. With proper PCB copper pour under the thermal pad, it sustains continuous 5A pulsed operation at 140°C junction temperature. The DGN package's 3.0mm × 3.0mm footprint and low-profile design support high-density power stage layouts without compromising thermal reliability in the UCC27523DGN.

Can the UCC27523DGN drive GaN transistors effectively?

Yes, the UCC27523DGN is explicitly optimized for GaN FETs: its 5A peak source/sink current, 7ns/6ns rise/fall times, 13ns propagation delay, and 4.5–18V supply range align with GaN gate requirements. TI's datasheet confirms suitability for "gate drive for emerging wide band-gap power devices such as GaN", and the UCC27523DGN's low output impedance (0.15Ω pulldown, 2.5Ω pullup) ensures minimal RC time constant with typical GaN Q_g values.