Texas Instruments UCC27524DSDR

Overview

UCC27524DSDR from Texas Instruments is a dual-channel, non-inverting, low-side gate driver IC designed for high-frequency switching power stages. It delivers 5A peak source/sink current per channel, features 17ns typical propagation delay and 1ns typical inter-channel delay matching, and supports 4.5V–18V VDD operation - enabling robust drive of Si MOSFETs and GaN power switches in DC-DC converters and motor control systems.

For engineers reviewing the UCC27524DSDR datasheet, UCC27524DSDR pinout, UCC27524DSDR application, or UCC27524DSDR equivalent, key selection criteria include negative input voltage tolerance (–5V), independent enable inputs (ENA/ENB), rail-to-rail output swing, UVLO-protected glitch-free startup, and WSON-8 thermal performance for high-density power designs.

Technical Context

The UCC27524DSDR uses a hybrid pull-up output stage with parallel N- and P-channel MOSFETs to deliver boosted 5A peak source current during the Miller plateau, while maintaining low ROL (0.15–1Ω) and ROH (2.5–7.5Ω) under DC conditions. Its TTL/CMOS-compatible inputs feature fixed 1.9–2.3V high-threshold and 0.95–1.35V low-threshold with ≥0.7V hysteresis - independent of VDD and stable across –40°C to 150°C junction temperature.

Each channel includes dedicated enable (ENA/ENB) with internal 200kΩ pull-up, allowing floating-pin default-enable operation and pin compatibility with UCC27324. Input pins integrate 120kΩ pulldown resistors to hold outputs LOW during floating conditions, and VDD UVLO (3.7–4.65V rising threshold) ensures deterministic low-state outputs at power-up/down.

Key Specifications

Pinout & Package

UCC27524DSDR is packaged in an 8-pin WSON (DSD) with 3.0mm × 3.0mm body and exposed thermal pad for enhanced PCB heat dissipation. The package supports reflow soldering and provides low R_θJA = 46.7°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27524DSDR, UCC27524DR trades thermal performance and negative input capability for legacy SOIC compatibility, while UCC27611DSCR offers higher current and tighter timing at the cost of channel count and enable flexibility - making UCC27524DSDR optimal for thermally demanding dual-channel GaN/Si designs requiring robustness and control granularity.

Availability

UCC27524DSDR is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, and motor control systems requiring stable component supply, extended temperature operation, and high-current gate drive reliability.

Supply support for UCC27524DSDR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability industrial and automotive components.

The UCC27524DSDR belongs to TI's high-speed gate driver product line, engineered specifically for high-frequency, high-efficiency power conversion systems using Si, SiC, and GaN power devices - emphasizing timing precision, thermal resilience, and system-level noise immunity.

FAQ

What is the maximum negative voltage the UCC27524DSDR inputs can tolerate?

The UCC27524DSDR inputs (INA, INB, ENA, ENB) tolerate –5V in the SOIC-8 and HVSSOP-8 packages. For the DSD (WSON-8) package used in UCC27524DSDR, the absolute minimum input voltage is –0.3V per Absolute Maximum Ratings - meaning UCC27524DSDR does not support –5V input capability. This distinction is confirmed in Section 6.1 of the datasheet, where DSD input voltage limits are explicitly listed as –0.3V to 20V.

Does the UCC27524DSDR support paralleling its two outputs for higher drive current?

Yes, the UCC27524DSDR supports paralleling OUTA and OUTB to effectively double peak drive current to 10A. This is explicitly stated in the Features list and validated by matched 1–4ns propagation delay between channels. To implement, connect INA to INB and ENA to ENB, then drive both outputs into a single power switch gate - ensuring equal PCB trace lengths to preserve timing integrity in UCC27524DSDR applications.

What is the purpose of the internal pulldown resistors on INA and INB pins in the UCC27524DSDR?

The UCC27524DSDR integrates 120kΩ internal pulldown resistors on INA and INB to ensure OUTA and OUTB remain LOW when those inputs are unconnected or floating - a critical safety feature during MCU reset, firmware initialization, or open-circuit fault conditions. This behavior is documented in Section 4 and Table 5-1, preventing unintended power switch turn-on and supporting IEC 62368-1 safety compliance in UCC27524DSDR designs.

How does the UCC27524DSDR handle undervoltage lockout (UVLO)?

The UCC27524DSDR implements VDD UVLO with a rising threshold of 3.7–4.65V and hysteresis of 0.2–0.5V. When VDD falls below the falling threshold, both outputs are actively held LOW - guaranteeing glitch-free startup and shutdown. This behavior is verified in Section 6.5 (UVLO specs) and Figure 6-7, and directly prevents shoot-through in half-bridge configurations during brown-out events in UCC27524DSDR deployments.

Is the UCC27524DSDR pin-compatible with earlier TI gate drivers like the UCC27324?

Yes, the UCC27524DSDR maintains pin compatibility with UCC27324 in the SOIC-8 (D) and HVSSOP-8 (DGN) packages, where ENA (Pin 1) and ENB (Pin 8) are designated No-Connect (N/C) and internally pulled up. However, the WSON-8 (DSD) package of UCC27524DSDR retains the same pin numbering but repurposes Pins 1 and 8 as functional enable inputs - so physical pinout matches, but functional compatibility requires explicit enable control in UCC27524DSDR implementations.