Texas Instruments UCC27524DSDT

Overview

UCC27524DSDT from Texas Instruments is a dual-channel, non-inverting, low-side gate driver IC designed for high-frequency switching power stages. It delivers 5A peak source/sink current per channel, features 17ns typical propagation delay and 1ns typical inter-channel delay matching, and operates across 4.5V–18V VDD with –40°C to 150°C junction temperature range-enabling robust gate drive for GaN FETs and IGBTs in DC-DC converters.

For engineers reviewing the UCC27524DSDT datasheet, UCC27524DSDT pinout, UCC27524DSDT application, or UCC27524DSDT equivalent, key selection criteria include negative input voltage tolerance (–5V), independent enable inputs (ENA/ENB), TTL/CMOS logic thresholds independent of VDD, UVLO protection, and WSON-8 package thermal performance (R_θJA = 46.7°C/W).

Technical Context

The UCC27524DSDT implements two independent, non-inverting low-side drivers with hybrid pull-up output architecture: a P-channel MOSFET for steady-state drive and an N-channel MOSFET briefly activated during turn-on to boost peak source current. Its input and enable thresholds are fixed (V_{IN_H} = 2.1V typ, V_{IN_L} = 1.2V typ) and independent of VDD, with 0.9V typical hysteresis for noise immunity.

Each channel includes internal pulldown on INx (120kΩ) and pullup on ENx (200kΩ), ensuring outputs default LOW when inputs float and default ENABLE when enables float. UVLO (V_ON = 4.2V typ, V_OFF = 3.9V typ) holds both outputs LOW during undervoltage conditions, guaranteeing glitch-free startup/shutdown.

Key Specifications

Pinout & Package

UCC27524DSDT is packaged in an 8-pin WSON (DSD) with exposed thermal pad (3.0mm × 3.0mm body), optimized for low-inductance layout and enhanced thermal dissipation in space-constrained power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27524DR and UCC27524DGNR, the UCC27524DSDT offers the smallest footprint (3.0mm × 3.0mm) and best thermal resistance (46.7°C/W), making it optimal for high-power-density GaN-based converters where layout area and thermal management are primary constraints.

Availability

UCC27524DSDT is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, GaN power stages, and synchronous rectifier circuits requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for UCC27524DSDT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power IC design.

The UCC27524 family was engineered specifically for high-efficiency, high-frequency switching power supplies-delivering robust gate drive for emerging wide-bandgap devices while maintaining compatibility with legacy silicon MOSFET systems.

FAQ

What is the maximum negative voltage the UCC27524DSDT inputs can tolerate?

The UCC27524DSDT inputs (INA, INB, ENA, ENB) tolerate –2V DC continuously and –5V transiently per Absolute Maximum Ratings. This enables direct connection to noisy gate nodes or controllers with ground bounce without external protection diodes, enhancing system robustness in motor drives and industrial inverters. The UCC27524DSDT maintains full functionality within its recommended operating range even with sustained –2V input bias.

Does the UCC27524DSDT support paralleling of its two output channels?

Yes, the UCC27524DSDT supports safe paralleling of OUTA and OUTB due to 1ns typical inter-channel delay matching and matched output impedance. When paralleled with shared INA/INB and ENA/ENB, the UCC27524DSDT delivers up to 10A peak drive current-ideal for driving high-capacitance GaN FETs or paralleled silicon MOSFETs in high-power DC-DC stages without timing skew or shoot-through risk.

How does the UCC27524DSDT handle floating input pins?

The UCC27524DSDT incorporates 120kΩ internal pulldown resistors on INA and INB, ensuring OUTA and OUTB remain LOW when inputs are unconnected or open-circuit. This fail-safe behavior prevents unintended power switch turn-on during system initialization, fault conditions, or controller reset-critical for safety certification in industrial and automotive applications. The UCC27524DSDT does not require external pull-down resistors for basic operation.

What is the purpose of the enable pins (ENA and ENB) on the UCC27524DSDT?

The ENA and ENB pins provide independent, active-high control of each output channel. Internally pulled up to VDD (200kΩ), they default to enabled when left floating-ensuring compatibility with UCC27324 layouts. Driving either pin LOW disables its respective output immediately, enabling features like burst-mode operation, fault shutdown, or asymmetric PWM control. The UCC27524DSDT's enable function operates across the full input voltage range (–2V to 18V) and is independent of VDD.

Is the UCC27524DSDT pin-compatible with earlier TI gate drivers?

Yes, the UCC27524DSDT is pin-compatible with the UCC27324 in SOIC-8 (D) and HVSSOP-8 (DGN) packages, as ENA and ENB map to the same pins (1 and 8) that are No-Connect (N/C) on the UCC27324. While the UCC27524DSDT adds functional enable capability, leaving ENA/ENB floating preserves drop-in replacement behavior. However, the WSON-8 (DSD) package has identical pinout but different thermal pad layout-requiring minor PCB revision for thermal optimization.