Texas Instruments UCC27525DSDR

Overview

UCC27525DSDR from Texas Instruments is a dual-channel, low-side gate driver IC with independent enable inputs, 5A peak source/sink current per channel, 13ns typical propagation delay, and 1ns typical inter-channel delay matching-designed for driving GaN FETs and MOSFETs in high-frequency synchronous rectifiers and DC-DC converters.

For engineers reviewing the UCC27525DSDR datasheet, UCC27525DSDR pinout, UCC27525DSDR application, or UCC27525DSDR equivalent, key selection considerations include its one-inverting/one-non-inverting input configuration, 4.5–18V VDD range, TTL/CMOS-compatible logic thresholds independent of supply voltage, and WSON-8 package with exposed thermal pad for high-power-density designs.

Technical Context

The UCC27525 implements two independent low-side drivers with separate ENA/ENB enable inputs and distinct input polarities: INA is inverting, INB is non-inverting. Its internal UVLO (4.2V turn-on, 300mV hysteresis) holds both outputs low during power-up/down, ensuring glitch-free operation. Input thresholds (VIN_H = 2.1V typ, VIN_L = 1.2V typ) and enable thresholds (VEN_H = 2.1V typ, VEN_L = 1.15V typ) are supply-independent and feature 0.9V typical hysteresis for noise immunity.

Each output stage delivers rail-to-rail drive with 5A pulsed current into capacitive loads, supported by low output resistances (ROH = 5Ω typ, ROL = 0.5Ω typ). The 3mm × 3mm WSON-8 package (DSD) provides 46.7°C/W junction-to-ambient thermal resistance, enabling reliable operation up to 140°C junction temperature in compact power stages.

Key Specifications

Pinout & Package

UCC27525DSDR is housed in a thermally enhanced 3mm × 3mm WSON-8 package (DSD) with exposed thermal pad (pin 3 is GND, pad tied to PCB ground plane for optimal heat dissipation).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27524DSDR and LM5113SDX/NOPB, the UCC27525DSDR uniquely combines independent enable inputs, mixed input polarity, and sub-15ns timing in a single 3mm × 3mm WSON package-making it optimal for space-constrained, safety-critical, high-frequency GaN power stages where channel-level fault response and layout simplicity are essential.

Availability

UCC27525DSDR is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, GaN-based motor drives, and industrial switched-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for UCC27525DSDR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in power management, signal chain, and high-reliability ICs for industrial, automotive, and communications markets.

The UCC2752x family was designed specifically for high-efficiency, high-frequency power conversion systems using wide-bandgap semiconductors-delivering robust gate drive with industry-leading speed, noise immunity, and thermal performance in compact packages.

FAQ

What is the input logic configuration of UCC27525DSDR?

The UCC27525DSDR features one inverting input (INA) and one non-inverting input (INB), with independent enable inputs (ENA and ENB) for each channel. This configuration allows asymmetric control-such as using INA for inverted PWM and INB for direct PWM-while maintaining full channel independence and safety via ENA/ENB. The UCC27525DSDR does not support dual inverting or dual non-inverting modes like UCC27523 or UCC27524.

Does UCC27525DSDR support parallel operation of its two outputs?

Yes, UCC27525DSDR supports paralleling OUTA and OUTB to achieve up to 10A peak drive current for single-switch applications. Because both channels exhibit 1ns typical delay matching and identical output characteristics, paralleling introduces negligible timing skew or current imbalance. Ensure equal PCB trace lengths and shared gate resistor placement when implementing this configuration for the UCC27525DSDR.

What thermal performance can be expected from UCC27525DSDR in its WSON-8 package?

The UCC27525DSDR in the DSD (WSON-8) package has a junction-to-ambient thermal resistance (RθJA) of 46.7°C/W when mounted on a standard 2-layer PCB with 1in² copper pour and thermal vias to inner ground planes. With proper thermal pad soldering and PCB layout, the UCC27525DSDR sustains continuous 5A pulsed operation at 140°C junction temperature-validated across –40°C to +140°C ambient per TI's production characterization.

How does UCC27525DSDR behave when input pins are left unconnected?

When INA or INB floats, internal VDD pullup (INA) or GND pulldown (INB) forces the respective output LOW-ensuring fail-safe gate-off behavior. Similarly, floating ENA or ENB defaults to HIGH, enabling the channel. This design eliminates external pull resistors and satisfies safety standards such as IEC 62368-1. The UCC27525DSDR guarantees predictable OFF-state behavior under all undefined input conditions.

Can UCC27525DSDR drive GaN power devices effectively?

Yes, UCC27525DSDR is explicitly optimized for GaN HEMTs: its 5A peak current, 13ns propagation delay, 7ns/6ns rise/fall times, and 4.5–18V VDD range match GaN gate requirements. TI's datasheet confirms operation with 100V GaN devices at >1MHz, and the UCC27525DSDR's low output impedance (ROH = 5Ω, ROL = 0.5Ω) minimizes gate ringing and overshoot during fast transitions.