Texas Instruments UCC27525DSDT

Overview

UCC27525DSDT from Texas Instruments is a dual-channel, low-side gate driver IC with independent enable inputs, 5A peak source/sink drive current, 13ns typical propagation delay, and rail-to-rail output capability-designed to drive MOSFETs and IGBTs in high-frequency power stages such as synchronous rectifiers and GaN-based DC-DC converters.

For engineers reviewing the UCC27525DSDT datasheet, UCC27525DSDT pinout, UCC27525DSDT application, or UCC27525DSDT equivalent, key selection considerations include its one-inverting/one-non-inverting input configuration, 4.5–18V VDD operating range, 1ns typical inter-channel delay matching, UVLO protection with 4.2V turn-on threshold, and WSON-8 (3mm × 3mm) thermally enhanced package with exposed pad.

Technical Context

The UCC27525DSDT implements two independent low-side drivers with separate ENA/ENB enable inputs and distinct input logic polarities: INA is inverting, INB is non-inverting. Its internal architecture minimizes shoot-through current and ensures glitch-free operation via VDD UVLO (4.2V turn-on, 0.3V hysteresis) that holds both outputs low during power-up/down.

Input thresholds (VIN_H = 2.1V typ, VIN_L = 1.2V typ, hysteresis = 0.9V typ) are TTL/CMOS-compatible and supply-independent, enabling direct interfacing with 3.3V or 5V controllers. Rise/fall times of 7ns/6ns (1.8nF load) and 1ns channel-to-channel delay matching support precise timing-critical topologies like synchronous buck and phase-shifted full-bridge.

Key Specifications

Pinout & Package

The UCC27525DSDT is housed in a thermally optimized 3mm × 3mm WSON-8 package with exposed thermal pad (DSD), supporting high-power density PCB layouts and efficient heat dissipation in compact power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27524DSDT and UCC27523DSDT, the UCC27525DSDT uniquely provides mixed-polarity inputs (INA inverting, INB non-inverting) plus independent enables - making it optimal for asymmetric control schemes like active-clamp forward or LLC resonant converters where channel-specific logic and gating are required.

Availability

UCC27525DSDT is available at Aetrix Electronics and suitable for switched-mode power supplies, GaN-based DC-DC converters, and motor control inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for UCC27525DSDT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability power solutions.

The UCC2752x product line was engineered specifically for high-efficiency, high-frequency power conversion - targeting GaN/SiC adoption in data center, industrial, and renewable energy systems through robust gate drive, thermal resilience, and noise-immune logic interfaces.

FAQ

What is the input logic configuration of the UCC27525DSDT?

The UCC27525DSDT features one inverting input (INA) and one non-inverting input (INB), with independent enable inputs (ENA and ENB) for each channel. This mixed-polarity architecture allows flexible control of asymmetrical topologies such as active-clamp forward or LLC resonant converters, where precise timing and independent gating of each switch are required. The UCC27525DSDT does not support dual inverting or dual non-inverting modes - those are implemented in UCC27523DSDT and UCC27524DSDT respectively.

Does the UCC27525DSDT support parallel operation of its two output channels?

Yes, the UCC27525DSDT supports paralleling OUTA and OUTB to deliver up to ±10A peak drive current to a single power switch. Its 1ns typical inter-channel delay matching ensures simultaneous switching with minimal skew, and rail-to-rail output capability maintains full voltage swing even under heavy capacitive loading. This configuration is commonly used to drive high-Qg GaN devices or paralleled MOSFETs in high-current power stages without external current-sharing components.

What is the purpose of the ENA and ENB pins on the UCC27525DSDT?

The ENA and ENB pins on the UCC27525DSDT provide independent active-high enable control for Channel A and Channel B outputs. When pulled low, each respective output is forced low regardless of its input state - enabling precise fault handling, burst-mode operation, or phase shedding. Both pins feature internal VDD pullups, so they default to enabled when left floating, ensuring safe startup. This functionality is absent in the UCC27524DSDT variant and differs from the UCC27523DSDT's identical enable structure but inverting-only inputs.

How does the UCC27525DSDT handle floating input pins?

The UCC27525DSDT incorporates internal pullup resistors on INA and pulldown resistors on INB, ensuring OUTA remains low and OUTB remains low when their respective inputs float. This fail-safe behavior prevents unintended power switch turn-on during MCU reset, communication loss, or unpowered control logic - a critical safety feature certified for industrial and automotive applications. The same mechanism applies to ENA and ENB, which default to enabled (high) when floating due to internal VDD pullups.

What thermal considerations apply to the UCC27525DSDT in WSON-8 (DSD) package?

The UCC27525DSDT in WSON-8 (DSD) package has a junction-to-board thermal resistance (RθJB) of 22.4°C/W and junction-to-ambient (RθJA) of 46.7°C/W when mounted on a standard 2-layer PCB with 1-in² copper pour under the exposed pad. To maintain operation within the –40°C to +140°C junction range, designers must solder the thermal pad to a dedicated ground plane using ≥6 thermal vias (0.3mm diameter) and ensure adequate airflow or heatsinking in high-power-density layouts. TI recommends verifying thermal performance via IR imaging under worst-case load conditions.