Texas Instruments UCC27526DSDT

Overview

UCC27526DSDT from Texas Instruments is a dual-channel, low-side gate driver IC designed to drive MOSFETs and IGBTs in high-frequency power stages. It delivers 5A peak source/sink current per channel, features 13ns typical propagation delay and 1ns typical inter-channel delay matching, and operates across 4.5V–18V supply with –40°C to 140°C junction temperature range - enabling robust GaN-based DC-DC converter and motor control designs.

For engineers reviewing the UCC27526DSDT datasheet, UCC27526DSDT pinout, UCC27526DSDT application, or UCC27526DSDT equivalent, key selection considerations include its dual-input per-channel architecture (INA+/INA−, INB+/INB−), WSON-8 package with exposed thermal pad, UVLO-protected glitch-free startup, and independent logic-level flexibility for inverting/non-inverting configurations without external level-shifting.

Technical Context

The UCC27526DSDT implements a dual-input per-channel architecture where each output is controlled by complementary input pairs (INA+/INA−, INB+/INB−), allowing user-selectable inverting or non-inverting operation per channel. Its internal UVLO circuit holds outputs low until VDD exceeds 4.2V (typ), with 300mV hysteresis to prevent chatter during brownout conditions.

Input thresholds are TTL/CMOS-compatible (VIN_H = 2.1V typ, VIN_L = 1.2V typ) and fully independent of VDD voltage, while internal pullup/pulldown resistors ensure outputs remain low when any input floats - a safety-critical feature verified across –40°C to 140°C.

Key Specifications

Pinout & Package

UCC27526DSDT uses a thermally enhanced 3mm × 3mm WSON-8 package (DSD) with exposed thermal pad for low R_θJA = 46.7°C/W. Pin numbering follows standard 8-pin WSON top-view layout with GND on Pin 3 and VDD on Pin 5.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27525DSDT and LM5113SDX/NOPB, the UCC27526DSDT uniquely supports per-channel logic polarity selection via dual inputs, offers tighter 1ns delay matching, and delivers higher 5A peak current - making it the optimal choice for GaN-based, high-frequency, dual-low-side applications demanding timing precision and configuration flexibility.

Availability

UCC27526DSDT is available at Aetrix Electronics and suitable for switched-mode power supplies, motor control systems, and solar DC-DC optimizers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for UCC27526DSDT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion solutions.

The UCC27526DSDT belongs to TI's UCC2752x family of high-speed low-side gate drivers, engineered specifically for emerging wide-bandgap power devices - emphasizing timing accuracy, thermal robustness, and logic flexibility in high-frequency power stage designs.

FAQ

What is the function of the INA+ and INA− pins on the UCC27526DSDT?

The INA+ and INA− pins on the UCC27526DSDT provide dual-input control for Channel A: INA+ serves as the non-inverting input, while INA− serves as the inverting input. To use Channel A in non-inverting mode, apply the PWM signal to INA+ and tie INA− to GND; for inverting mode, apply the signal to INA− and tie INA+ to VDD. This architecture enables flexible logic configuration without external components - a defining feature of the UCC27526DSDT versus other members of the UCC2752x family.

Does the UCC27526DSDT support operation below 5V supply voltage?

Yes, the UCC27526DSDT supports operation down to 4.5V VDD, with guaranteed performance across its full 4.5V–18V range. Its UVLO threshold starts at 3.7V (min) and rises to 4.5V (max), ensuring reliable startup even with marginal bias rails. This low-VDD capability makes the UCC27526DSDT especially suitable for driving GaN FETs that benefit from reduced gate drive voltage, and for systems powered from partially discharged batteries or low-headroom DC sources.

How does the UCC27526DSDT ensure safe operation when input pins are left unconnected?

The UCC27526DSDT incorporates internal pullup resistors on INA− and INB−, and pulldown resistors on INA+ and INB+, ensuring that any floating input forces the corresponding output low. This failsafe behavior prevents unintended power switch activation during system initialization, fault conditions, or PCB trace opens - a critical requirement for safety-certified power designs. This behavior is explicitly characterized and guaranteed across –40°C to 140°C, and is integral to the UCC27526DSDT's functional safety profile.

Can both outputs of the UCC27526DSDT be paralleled to increase drive strength?

Yes, the UCC27526DSDT supports paralleling OUTA and OUTB to deliver up to 10A peak source/sink current, enabled by its 1ns typical inter-channel delay matching. When configured with identical input signals (e.g., INA+ = INB+ and INA− = INB−), the two channels operate synchronously with negligible skew, minimizing shoot-through risk. This capability is explicitly documented in TI's UCC2752x datasheet and validated under load - a key differentiator of the UCC27526DSDT for driving high-Qg GaN or SiC devices in compact form factors.

What thermal performance can be expected from the UCC27526DSDT in a standard 2-layer PCB layout?

In a standard 2-layer PCB with 1-in² copper pour connected to the exposed thermal pad, the UCC27526DSDT achieves R_θJA ≈ 46.7°C/W - significantly lower than SOIC-8 (130.9°C/W) or MSOP-8 (71.8°C/W) variants. With 1W dissipation, this yields ~47°C temperature rise above ambient, supporting continuous operation at full 5A drive into 1.8nF loads at 140°C junction temperature. TI recommends soldering the thermal pad with ≥6 thermal vias to inner ground planes for optimal performance - a design practice directly supported by the UCC27526DSDT's WSON-8 package construction.