Texas Instruments UCC27527DSDR

Overview

UCC27527DSDR from Texas Instruments is a dual-channel, low-side MOSFET/IGBT gate driver IC with independent inverting and non-inverting inputs per channel, 5-A peak source/sink drive current, 17-ns typical propagation delay, and 4.5-V to 18-V single-supply operation - used in synchronous rectifier control within high-frequency switch-mode power supplies.

For engineers reviewing the UCC27527DSDR datasheet, UCC27527DSDR pinout, UCC27527DSDR application, or UCC27527DSDR equivalent, key selection criteria include input configuration flexibility (INA+/INA−), matched channel delays (1-ns typical), UVLO behavior (4.2 V turn-on), negative input voltage tolerance (–5 V), and WSON-8 thermal performance (R_θJA = 46.1 °C/W).

Technical Context

The UCC27527DSDR implements CMOS-input threshold logic where VIN_H ≈ 55% VDD and VIN_L ≈ 38% VDD, with 17% VDD hysteresis - enabling robust noise immunity and compatibility with slow dV/dt signals via external RCD networks. Its dual-input architecture allows per-channel selection of inverting (INA−/INB−) or non-inverting (INA+/INB+) operation without external logic.

Each channel features independent enable control via internal pull-up/pull-down resistors on all inputs, ensuring outputs remain low during floating conditions. Propagation delays (t_D1/t_D2) are tightly matched (1 ns typical) and stable across temperature (–40°C to 140°C) and supply voltage (4.5–18 V), supporting precise timing-critical applications like GaN-based DC-DC converters.

Key Specifications

Pinout & Package

UCC27527DSDR uses an 8-pin WSON package (3.00 mm × 3.00 mm, 0.75-mm height) with wettable flanks, rated MSL Level 2, and optimized thermal resistance (R_θJA = 46.1 °C/W, R_θJB = 21.8 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side gate driver applications.

Compared with UCC27527DSDR, UCC27528DSDR trades input flexibility for simpler enable control, while LM5113SDX/NOPB offers higher drive strength at the cost of configurability and thermal performance (R_θJA = 62.5 °C/W vs. 46.1 °C/W).

Availability

UCC27527DSDR is available at Aetrix Electronics and suitable for switch-mode power supplies, motor control inverters, and GaN-based DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for UCC27527DSDR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with over 50 years of leadership in high-reliability power IC design.

The UCC27527DSDR belongs to TI's UCC2752x gate driver family, engineered specifically for high-frequency, high-efficiency power conversion systems using silicon MOSFETs, IGBTs, and wide-bandgap devices like GaN and SiC.

FAQ

What is the function of the INA− and INA+ pins on the UCC27527DSDR?

The UCC27527DSDR uses INA− and INA+ as complementary inputs for Channel A: INA− serves as the inverting input (driving OUTA low when high), while INA+ serves as the non-inverting input (driving OUTA high when high). Either can be used independently; the unused pin must be tied to GND (for INA−) or VDD (for INA+) to ensure defined output state. This dual-input architecture enables flexible logic configuration without external components.

Does the UCC27527DSDR support negative voltage on its input pins?

Yes, the UCC27527DSDR supports –5 V on all input pins (INA+, INA−, INB+, INB−), as specified in the Absolute Maximum Ratings table. This capability eliminates the need for external clamping diodes in high-dV/dt environments such as half-bridge gate-drive circuits where Miller-induced negative spikes commonly occur.

How does the UCC27527DSDR behave during power-up and brown-out conditions?

The UCC27527DSDR incorporates an under-voltage lockout (UVLO) circuit that holds both OUTA and OUTB low until VDD rises above 4.2 V (typical), and keeps them low until VDD falls below 3.9 V (typical) during power-down. This ensures glitch-free operation at startup and shutdown, preventing unintended power-switch activation in SMPS and motor-control applications.

What is the thermal performance of the UCC27527DSDR in its WSON-8 package?

The UCC27527DSDR in the DSD (WSON-8) package has a junction-to-ambient thermal resistance (R_θJA) of 46.1 °C/W and junction-to-board resistance (R_θJB) of 21.8 °C/W - significantly lower than the SOIC-8 variant (R_θJA = 128 °C/W). This enables higher continuous output current in compact layouts without heatsinking, especially critical in high-density GaN power modules.

Can the UCC27527DSDR drive both MOSFETs and GaN FETs effectively?

Yes, the UCC27527DSDR is explicitly characterized and recommended for driving both silicon MOSFETs and GaN HEMTs. Its 5-A peak source/sink current, 7-ns rise time, and 4.5-V minimum VDD allow direct interfacing with low-threshold GaN devices (e.g., EPC2065), while its 1-ns channel matching ensures precise timing control essential for minimizing dead-time losses in GaN-based converters.