Texas Instruments UCC27528DSDT

Overview

UCC27528DSDT from Texas Instruments is a dual-channel, non-inverting, low-side gate driver IC designed to drive MOSFETs and IGBTs in high-frequency power stages. It delivers 5-A peak source/sink current, features 17-ns typical propagation delay, 1-ns channel-to-channel delay matching, and operates from 4.5-V to 18-V single supply - enabling robust GaN gate drive in DC-DC converters and synchronous rectifiers.

For engineers reviewing the UCC27528DSDT datasheet, UCC27528DSDT pinout, UCC27528DSDT application, or UCC27528DSDT equivalent, key selection considerations include its independent enable pins (ENA/ENB), CMOS-input threshold logic referenced to VDD, UVLO protection with 4.2-V turn-on threshold, and WSON-8 (3.0 mm × 3.0 mm) thermal performance validated for –40°C to 140°C operation.

Technical Context

The UCC27528DSDT implements two independent non-inverting gate-drive channels with TTL/CMOS-compatible enable inputs (ENA/ENB) that function independently of VDD bias. Its input thresholds scale with VDD (55% high / 38% low), providing inherent noise immunity and compatibility with auxiliary bias rails.

Internally, it uses matched propagation paths to achieve ≤1-ns delay skew between channels and incorporates UVLO circuitry that forces both outputs low until VDD exceeds 4.2 V - ensuring glitch-free startup. The output stage employs complementary MOSFETs with 0.15-Ω typical pull-down and 2.5-Ω typical pull-up resistance for fast 7-ns rise / 6-ns fall times into 1.8-nF loads.

Key Specifications

Pinout & Package

UCC27528DSDT is housed in an 8-pin WSON package (3.0 mm × 3.0 mm, 0.65-mm pitch) with exposed thermal pad for enhanced power dissipation. Thermal resistance R_θJA is 46.1°C/W, enabling >1-W continuous operation with minimal PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27524ADRMT and LM5113SDX/NOPB, the UCC27528DSDT provides superior thermal performance in a 3-mm WSON package, VDD-scaled input thresholds eliminating external bias networks, and integrated safety logic ensuring fail-safe low-state defaults - making it optimal for space-constrained, high-reliability GaN and SiC power stages.

Availability

UCC27528DSDT is available at Aetrix Electronics and suitable for motor control systems, solar microinverters, industrial DC-DC converters, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for UCC27528DSDT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in power management, signal chain, and high-reliability ICs.

The UCC27528DSDT belongs to TI's UCC2752x dual gate driver product line, engineered specifically for high-frequency, high-efficiency power conversion using wide-bandgap devices - emphasizing low propagation delay, matched timing, and robust thermal/safety performance.

FAQ

What is the maximum allowable negative voltage on the INA and INB pins of the UCC27528DSDT?

The UCC27528DSDT supports –5-V negative voltage handling capability on its INA and INB input pins, as specified in the Absolute Maximum Ratings table. This rating is independent of the VDD supply voltage and allows the device to withstand negative transients common in motor drive and industrial power systems without requiring external clamping diodes. The specification is verified per JEDEC standards and applies across the full operating temperature range.

Does the UCC27528DSDT require external pull-up or pull-down resistors on its input pins?

No, the UCC27528DSDT does not require external pull-up or pull-down resistors on INA or INB. Internal pulldown resistors ensure OUTA and OUTB remain low when these inputs are floating - a built-in safety feature confirmed in the datasheet's Pin Functions and Feature Description sections. ENA and ENB have internal pullups to VDD, so they default to enabled when left unconnected, eliminating external components for basic operation.

How does the UCC27528DSDT's UVLO behavior affect power-up sequencing in a 48-V-to-12-V DC-DC converter?

During power-up in a 48-V-to-12-V DC-DC converter, the UCC27528DSDT holds both OUTA and OUTB low until VDD rises above the 4.2-V UVLO threshold, preventing premature switching that could cause inrush current or transformer saturation. Its 350-mV hysteresis avoids chatter during supply droop under load. This behavior is intrinsic to the UCC27528DSDT and requires no external circuitry - ensuring glitch-free startup even with slow-ramping auxiliary bias rails.

Can the UCC27528DSDT drive GaN FETs directly without additional level-shifting circuitry?

Yes, the UCC27528DSDT can drive enhancement-mode GaN FETs directly. Its rail-to-rail output swing (GND to VDD), 5-A peak current, and 7-ns rise time meet the gate drive requirements of common 30-V and 65-V GaN devices. Its VDD-referenced CMOS inputs eliminate level-shifting needs when controlled by 3.3-V or 5-V MCUs - a capability explicitly validated in TI's UCC2752x application notes for GaN power stages.

What is the thermal resistance (R_θJA) of the UCC27528DSDT in its WSON-8 package, and how does it compare to the SOIC-8 variant?

The UCC27528DSDT in the WSON-8 (DSD) package has a junction-to-ambient thermal resistance (R_θJA) of 46.1°C/W, significantly lower than the 128°C/W of the SOIC-8 (D) variant. This 64% improvement results from the WSON's exposed thermal pad and optimized PCB copper layout - enabling higher continuous drive current or operation in compact, thermally constrained enclosures without forced air cooling.