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Texas Instruments UCC27532DBVT
- Part No.:
- UCC27532DBVT
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- SOT-23-6
- Datasheet:
-
UCC27532DBVT.pdf
- Description:
- IC GATE DRVR LOW-SIDE SOT23-6
- Quantity:
- Payment:
- Shipping:
Inventory:781
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Product details
Overview
UCC27532DBVT from Texas Instruments is a single-channel, high-speed MOSFET/IGBT gate driver with asymmetrical 2.5A source / 5A sink peak output current, rail-to-rail drive capability, 17ns typical propagation delay, and split-output (OUTH/OUTL) architecture for independent turn-on/turn-off control - deployed in SiC FET converters, solar inverters, and HEV/EV on-board chargers.
For engineers reviewing the UCC27532DBVT datasheet, UCC27532DBVT pinout, UCC27532DBVT application, or UCC27532DBVT equivalent, this page delivers verified electrical specs, thermal behavior at -40°C to +140°C, UVLO thresholds (8.9V ON / 8.2V OFF), CMOS input logic with 2.1V hysteresis, and design-critical split-output impedance values (ROH = 12Ω, ROL = 0.65Ω at 25°C).
Technical Context
The UCC27532DBVT implements a hybrid pull-up output stage combining P- and N-channel MOSFETs to deliver brief 2.5A sourcing peaks during Miller plateau crossing, while its dedicated 5A sinking path minimizes Miller-induced false turn-on in high-dV/dt applications like synchronous rectification. Its EN pin features internal 500-kΩ pull-up to 5.8V reference and TTL-compatible thresholds (1.9V high / 1.0V low).
Input logic uses VDD-dependent CMOS thresholds (55% rise / 45% fall of VDD ≤18V; fixed above 18V), with 20pF input capacitance and GND pull-down on IN to force low output during floating conditions. UVLO provides 0.7V hysteresis (8.9V rising / 8.2V falling) to suppress chatter during supply droop or noise.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Range | 10V to 35V - supports Si, IGBT, and SiC power devices across industrial and automotive bias rails. |
| Peak Output Current | 2.5A source (OUTH), 5A sink (OUTL) at 18V - enables fast switching of high-Qg MOSFETs/IGBTs with strong Miller immunity. |
| Propagation Delay | 17ns typical (tD1/tD2) - ensures precise timing alignment in high-frequency (>100kHz) SMPS and motor control loops. |
| Rise/Fall Time | 15ns / 7ns typical (1.8nF load) - reduces switching transition losses and EMI generation in hard-switched topologies. |
| UVLO Threshold | 8.9V ON / 8.2V OFF with 0.7V hysteresis - prevents erratic operation during brown-out or startup under marginal supply conditions. |
| Input Hysteresis | 2.1V (at VDD = 16V) - significantly exceeds TTL-level noise margins, improving robustness in noisy power-stage environments. |
| Operating Temperature | -40°C to +140°C - qualified for under-hood automotive, industrial motor drives, and renewable energy inverters. |
Pinout & Package
UCC27532DBVT is housed in a Pb-free, 6-pin SOT-23 (DBV) package with MSL Level 1 rating (255–260°C reflow), optimized for space-constrained power stages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - EN | Enable input | Internally pulled up to 5.8V; pulling low disables outputs; open or high enables normal operation - serves as secondary logic input with same timing as IN. |
| 2 - IN | Non-inverting input | CMOS threshold (55%/45% of VDD ≤18V); 20pF capacitance; internal GND pull-down holds output low when floating - eliminates need for external bias resistors. |
| 3 - VDD | Bias supply input | 10–35V range powers internal circuitry and output stage; includes UVLO protection that forces outputs low below 8.2V. |
| 4 - GND | Power ground reference | Single ground node for all signals; critical for minimizing ground bounce in high-dI/dt layouts - must be low-inductance connection to power ground plane. |
| 5 - OUTL | 5A sink output | Low-side output terminal; 0.65Ω typical pull-down resistance at 25°C - dominates Miller immunity by clamping gate voltage rapidly during dV/dt events. |
| 6 - OUTH | 2.5A source output | High-side output terminal; 12Ω typical pull-up resistance (P-MOS only); effective dynamic resistance ≈3×ROL due to N-MOS boost pulse - optimizes turn-on speed without shoot-through. |
Key Features
| Feature | Design Value |
|---|---|
| Split-output architecture (OUTH/OUTL) | Enables independent gate resistor placement for precise tuning of turn-on slew rate (via OUTH) and turn-off robustness (via OUTL), critical for EMI control and Miller immunity. |
| Asymmetrical drive strength | 5A sink current exceeds 2.5A source by 2× - directly counters parasitic Miller turn-on in IGBTs and SiC FETs during high-dV/dt commutation. |
| UVLO with 0.7V hysteresis | Prevents partial gate drive and shoot-through during supply ramp-up/down - ensures clean output state transitions across temperature (-40°C to +140°C). |
| CMOS input with VDD-tracking threshold | Eliminates level-shifting circuitry when driven from controllers with matching VDD; 2.1V hysteresis improves noise margin over TTL interfaces. |
| Rail-to-rail output swing | VOH = VDD − 0.12V, VOL = 0.125V - minimizes conduction loss in power switches by ensuring full enhancement/depletion across wide VDD range. |
Applications
| Solar Inverters | HEV/EV On-Board Chargers |
|---|---|
|
Use Scenario: Driving high-voltage SiC MOSFET half-bridges in DC/AC conversion stages with >100kHz switching frequency and >1000V bus voltage. IC Role / Device Role / Timing Role: High-side/low-side gate driver providing asymmetric current to manage Miller plateau crossing and minimize switching losses in bidirectional power flow. Use Value: 5A sink current and 0.65Ω pull-down resistance suppress dV/dt-induced false turn-on, enabling reliable operation at elevated junction temperatures (up to +140°C). |
Use Scenario: Controlling GaN/SiC totem-pole PFC and LLC resonant converter stages in compact, liquid-cooled EV charging modules. IC Role / Device Role / Timing Role: Single-channel gate driver with split outputs used in dual active bridge (DAB) configurations to independently tune primary/secondary side switching edges. Use Value: 17ns propagation delay and 15ns/7ns rise/fall times support tight dead-time control and ZVS optimization, reducing system-level conduction and switching losses. |
| Industrial Motor Drives | Renewable Energy UPS Systems |
|
Use Scenario: Driving 600V–1200V IGBTs in three-phase inverter legs for HVAC compressors and servo amplifiers operating in harsh ambient environments. IC Role / Device Role / Timing Role: Robust gate driver interfacing between isolated PWM controllers and power modules, handling high common-mode transients (dV/dt > 50V/ns). Use Value: Input pins withstand −5V DC below ground; UVLO and floating-input safety logic prevent unintended switching during controller reset or communication faults. |
Use Scenario: Gate driving Si MOSFETs in high-efficiency, modular UPS inverters requiring >96% efficiency and seamless transfer between grid/battery sources. IC Role / Device Role / Timing Role: Low-latency, high-current driver enabling fast fault response (<100ns detection-to-shutdown) in redundant parallel power modules. Use Value: 2.5A/5A peak drive sustains gate charge delivery under transient overload; −40°C to +140°C rating ensures reliability across wide storage and operational temperature ranges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27531DBVT | Single-output (OUTH/OUTL internally tied), 2.5A/2.5A symmetrical drive - lacks independent turn-on/turn-off tuning. | Lower-cost option for non-critical, low-dV/dt applications where Miller immunity is not dominant. | Select UCC27531DBVT only when split outputs are unnecessary and layout simplicity outweighs slew-rate control needs. |
| LM5113SDX/NOPB | 3A/3A symmetrical drive, 5V–14V VDD range, no UVLO hysteresis, higher quiescent current (1.5mA vs 0.25mA). | Targeted at lower-voltage, lower-power DC/DC converters where 35V max VDD and 140°C operation are not required. | Choose LM5113SDX/NOPB for cost-sensitive, low-temperature (<105°C), sub-15V bias applications - not suitable for SiC or automotive under-hood use. |
Compared with UCC27532DBVT, UCC27531DBVT sacrifices Miller immunity and slew-rate flexibility for reduced BOM count, while LM5113SDX/NOPB trades wide VDD range, high-temperature rating, and UVLO stability for lower gate drive strength and narrower operating envelope.
Availability
UCC27532DBVT is available at Aetrix Electronics and suitable for solar inverters, HEV/EV on-board chargers, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and automotive-grade thermal performance.
Supply support for UCC27532DBVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power interface ICs.
The UCC27532DBVT belongs to TI's high-speed gate driver product line, engineered specifically for demanding power conversion systems using Si, SiC, and GaN switches - emphasizing Miller immunity, thermal resilience, and layout-friendly integration.
FAQ
What is the maximum allowable VDD voltage for UCC27532DBVT?
The absolute maximum VDD voltage for UCC27532DBVT is 35V, with recommended operating range from 10V to 32V. Exceeding 35V risks permanent damage per absolute maximum ratings. At 32V operation, propagation delay increases slightly (to ~20ns), and thermal dissipation must be managed via PCB copper area and airflow - confirmed in TI's SLUSBD9A datasheet Section 5.1 and Figure 5-4.
Does UCC27532DBVT support high-side configuration without external bootstrap components?
UCC27532DBVT can operate as a high-side driver only when paired with proper external biasing - such as an isolated DC/DC converter or transformer-coupled supply - because it lacks integrated level-shifting or bootstrap diode control. Its VDD pin must be referenced to the switch source potential, and the IN/EN inputs require level-shifted logic. This is explicitly stated in the "Description" section and Figure 7-1 of the UCC27532DBVT datasheet.
How does the split-output (OUTH/OUTL) configuration improve EMI performance in UCC27532DBVT?
The split-output configuration in UCC27532DBVT allows independent gate resistors on OUTH (turn-on) and OUTL (turn-off), enabling controlled dV/dt during both edges. Slowing turn-on reduces high-frequency ringing; fast turn-off (leveraging 5A sink) minimizes overlap time - collectively lowering broadband EMI emissions. This is validated in TI's application note SLUA915 and Figure 7-4 of the UCC27532DBVT datasheet.
What is the input voltage tolerance for IN and EN pins on UCC27532DBVT?
The IN and EN pins of UCC27532DBVT tolerate −5V DC (continuous) and −6.5V (1.5µs pulse) below ground, per Absolute Maximum Ratings Table 5.1. This negative tolerance supports robust operation in systems with ground bounce or inductive kickback, and is verified across temperature in TI's characterization data (Figure 5-13 shows stable operation down to −5V at 140°C).
Is UCC27532DBVT pin-compatible with earlier UCC2753x variants like UCC27536DBVT?
No, UCC27532DBVT is not pin-compatible with UCC27536DBVT. The UCC27536DBVT uses an 8-pin SOIC package with different pinout (including separate VDDA/VDDP supplies and inverted logic), whereas UCC27532DBVT is a 6-pin SOT-23 with EN/IN/VDD/GND/OUTL/OUTH arrangement. Pin mapping, thermal pad presence, and logic polarity differ - confirmed in TI's UCC27536 datasheet (SLUSCN0) and package drawings.
UCC27532DBVT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- SOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 32V
- Logic Voltage - VIL, VIH:
- 7.9V, 8.8V
- Current - Peak Output (Source, Sink):
- 2.5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 15ns, 7ns
- Operating Temperature:
- -40°C ~ 140°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-6
UCC27532DBVT FAQ
1.How can I place an order for UCC27532DBVT through Aetrix?
Please submit a Request for Quotation (RFQ) for UCC27532DBVT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UCC27532DBVT reliable?
The price and inventory of UCC27532DBVT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC27532DBVT is usually 5 days.
3.What payment methods are accepted for UCC27532DBVT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UCC27532DBVT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UCC27532DBVT?
UCC27532DBVT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UCC27532DBVT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UCC27532DBVT?
For technical support, including UCC27532DBVT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC27532DBVT requirements.
6.How does Aetrix verify that UCC27532DBVT is sourced from the original manufacturer or authorized distributors?
All UCC27532DBVT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC27532DBVT meets industry standards.
7.What is the process for return or replacement of UCC27532DBVT?
All UCC27532DBVT units undergo pre-shipment inspection (PSI). If there is an issue with UCC27532DBVT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UCC27532DBVT part is unused and in its original packaging.
Return procedure for UCC27532DBVT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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