Texas Instruments UCC27611DRVT

Overview

UCC27611 from Texas Instruments is a single-channel, low-side GaN FET gate driver optimized for 5-V drive with 4-A peak source and 6-A peak sink current, rail-to-rail output swing, 14-ns typical propagation delay, and integrated 5-V VREF linear regulator - deployed in high-frequency switch-mode power supplies and synchronous rectifiers.

For engineers reviewing the UCC27611 datasheet, UCC27611 pinout, UCC27611 application, or UCC27611 equivalent, this device delivers asymmetric drive strength, split-output turnon/turnoff optimization, TTL/CMOS-compatible dual inputs, UVLO protection, and SON-6 package layout compatibility with eGaN FET footprints - critical for minimizing Miller-induced shoot-through in >1-MHz GaN-based converters.

Technical Context

The UCC27611 implements a hybrid pullup output stage combining N- and P-channel MOSFETs to deliver brief 4-A peak sourcing during Miller plateau transition, while its dedicated 0.35-Ω pulldown path ensures robust 6-A sink capability for fast, controlled turnoff - directly addressing GaN FETs' low threshold voltage and high dV/dt sensitivity. Its input thresholds (1.1 V low / 2.05 V high) are fixed and VDD-independent, enabling reliable interfacing with 3.3-V or 5-V controllers.

Internal VREF regulation holds output drive voltage at 4.75–5.15 V across temperature and load, eliminating external LDO requirements. The split OUTH/OUTL outputs allow independent gate resistor placement for slew-rate tuning, and UVLO (3.8 V ±0.25 V hysteresis) ensures safe startup/shutdown sequencing in high-reliability power stages.

Key Specifications

Pinout & Package

UCC27611 is housed in a 2.00 mm × 2.00 mm SON-6 package with exposed thermal and ground pad (DRV variant), minimizing parasitic inductance for high-dV/dt GaN applications and improving thermal dissipation in compact layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side GaN gate driver applications.

Compared with LM5113SDX/NOPB and TPS28225DR, the UCC27611 uniquely integrates VREF regulation, split outputs, and sub-15 ns propagation delay in a thermally enhanced 2-mm SON package - making it the only option that simultaneously satisfies GaN-specific requirements for gate voltage accuracy, Miller immunity, and high-frequency timing fidelity.

Availability

UCC27611 is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, solar microinverters, synchronous rectification circuits, and envelope-tracking amplifiers requiring stable component supply, long-term lifecycle support, and traceable GaN-optimized gate drivers.

Supply support for UCC27611 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management ICs, with leadership in high-performance power conversion and GaN ecosystem development.

The UCC27611 belongs to TI's high-speed GaN gate driver product line, engineered specifically to address the precise 5-V gate-drive, low-inductance layout, and Miller immunity demands of enhancement-mode GaN FETs in >1-MHz power systems.

FAQ

What is the purpose of the split OUTH and OUTL pins on the UCC27611?

The UCC27611 uses separate OUTH (4-A source) and OUTL (6-A sink) pins to enable independent gate resistor placement for turnon and turnoff control. This allows designers to optimize slew rate, suppress ringing, and improve Miller immunity - a critical capability for GaN FETs where asymmetric drive strength directly impacts reliability and efficiency. The UCC27611's split outputs eliminate the need for external diode-resistor networks typically required with single-output drivers.

Does the UCC27611 require an external 5-V supply for gate drive?

No. The UCC27611 integrates an internal linear regulator that delivers a tightly regulated 4.75–5.15 V output on the VREF pin, eliminating the need for an external 5-V supply. This VREF output powers the gate of the GaN FET directly and is decoupled with a local 2-µF ceramic capacitor. The UCC27611 thus simplifies design, reduces BOM count, and improves gate-drive accuracy compared to drivers requiring external regulation.

How does the UCC27611 prevent false turnon due to Miller effect in GaN FETs?

The UCC27611 combats Miller-induced false turnon through three integrated features: (1) a strong 6-A peak sink current on OUTL for rapid gate discharge, (2) a low 0.35-Ω pulldown resistance that maintains low impedance during high dV/dt events, and (3) a hybrid pullup architecture that avoids sustained high-current sourcing outside the Miller plateau. These features are validated in the UCC27611's application notes for >100 V/ns GaN switching, where it demonstrates zero shoot-through under worst-case conditions.

Can the UCC27611 be used with both inverting and noninverting PWM signals?

Yes. The UCC27611 provides dual inputs - IN+ (noninverting) and IN− (inverting) - allowing flexible configuration without external logic. When using IN+, the output follows the input state (high-in → high-out); when using IN−, the output is inverted (high-in → low-out). The unused input must be biased appropriately (IN− to GND for IN+ use; IN+ to VDD for IN− use), and both inputs include internal pullup/pulldown resistors to ensure safe LOW output if left floating - a key safety feature of the UCC27611.

What is the operating temperature range of the UCC27611, and how is thermal performance ensured?

The UCC27611 operates from –40°C to +140°C junction temperature and is packaged in a 2.00 mm × 2.00 mm SON-6 with an exposed thermal pad (GND PAD, Pin 7). Thermal resistance is specified as R_θJA = 80.3°C/W and R_θJC(bot) = 18.8°C/W, enabling efficient heat transfer to the PCB. To achieve rated performance, the exposed pad must be soldered to a minimum 100 mm² copper pour with ≥4 thermal vias - a requirement explicitly validated in TI's UCC27611 thermal characterization reports and reflected in the UCC27611's 140°C continuous operation rating.