Texas Instruments UCC27614DSGR

Overview

UCC27614DSGR from Texas Instruments is a single-channel, low-side gate driver IC designed to drive MOSFETs, IGBTs, SiC, and GaN power switches in high-frequency switching stages. It delivers 10-A peak source/sink current, features 17.5-ns typical propagation delay, supports –10-V input tolerance, and operates across 4.5 V to 26 V VDD with UVLO - enabling robust control in telecom SMPS and PFC circuits.

For engineers reviewing the UCC27614DSGR datasheet, UCC27614DSGR pinout, UCC27614DSGR application, or UCC27614DSGR equivalent, key selection considerations include its dual-input flexibility (IN+/IN−), TTL-compatible voltage-independent thresholds, active pulldown during UVLO, 2-mm × 2-mm SON8 package thermal performance, and Miller immunity via 0.34-Ω pulldown resistance.

Technical Context

The UCC27614DSGR implements a hybrid output stage with parallel N- and P-channel MOSFETs: the N-channel briefly activates during turn-on to deliver boosted 10-A peak source current in the Miller plateau region, while the dedicated low-impedance N-channel pulldown (0.34 Ω) suppresses dV/dt-induced spurious turn-on. Its input stage uses fixed TTL thresholds (1 V low / 2 V high, 1-V hysteresis) independent of VDD, enabling direct interfacing with 3.3-V/5-V controllers.

Functional modes include normal operation and UVLO-latched state, where outputs are actively held low below 3.8-V VDD falling threshold. The EN pin provides independent logic-level enable/disable control with internal 200-kΩ pullup, and both IN− and EN accept –10-V transients - critical for ground-bounce resilience in high-noise power stages.

Key Specifications

Pinout & Package

UCC27614DSGR is housed in an 8-pin SON (DSG) package with exposed thermal pad. The package measures 2.0 mm × 2.0 mm × 0.75 mm and requires soldering the thermal pad to a large GND copper plane for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27614DSGR, UCC27624DR offers channel integration at the expense of configurability, while LM5113SDX/NOPB trades drive strength and noise immunity for legacy SOIC compatibility - making UCC27614DSGR optimal for space-constrained, high-dV/dt SiC/GaN systems demanding single-channel precision.

Availability

UCC27614DSGR is available at Aetrix Electronics and suitable for telecom switch-mode power supplies, power factor correction circuits, and solar inverters requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for UCC27614DSGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion solutions.

The UCC27614DSGR belongs to TI's high-speed gate driver product line, engineered specifically for high-efficiency, high-frequency power stages using wide-bandgap devices - emphasizing robustness, timing precision, and thermal efficiency in demanding industrial and energy infrastructure applications.

FAQ

What is the maximum allowable negative voltage on the IN− pin of the UCC27614DSGR?

The UCC27614DSGR IN− pin is rated for –10 V per absolute maximum specifications. This rating applies continuously under steady-state conditions and supports transient ground bounce events in high-noise power stages. Exceeding –10 V may cause permanent damage. The same –10-V limit applies to IN+, EN, and all other input pins. Always verify layout grounding and decoupling to maintain this margin in real-world operation of the UCC27614DSGR.

Does the UCC27614DSGR support inverting and non-inverting configurations?

Yes, the UCC27614DSGR supports both configurations via its dual-input architecture: applying PWM to IN+ yields non-inverting behavior, while applying it to IN− yields inverting behavior. The unused input must be tied appropriately (IN+ to VDD, IN− to GND) to avoid floating states. This flexibility eliminates external inverters in half-bridge or synchronous rectifier topologies - a key design advantage of the UCC27614DSGR over single-input gate drivers.

What is the purpose of the thermal pad on the UCC27614DSGR package?

The exposed thermal pad on the UCC27614DSGR's SON-8 (DSG) package must be soldered to a large GND copper plane to dissipate heat and maintain junction temperature within –40°C to 150°C limits. It is not a low-impedance path to GND but significantly lowers RθJB (junction-to-board) to 33.4°C/W. Proper thermal pad connection is mandatory for full 10-A drive capability at elevated ambient temperatures - failure to do so risks thermal shutdown or reduced lifetime in the UCC27614DSGR.

How does the UCC27614DSGR handle undervoltage lockout (UVLO)?

The UCC27614DSGR features a dedicated UVLO circuit with 3.8-V falling threshold and 4.1-V rising threshold (0.3-V hysteresis). When VDD drops below 3.8 V, outputs are actively pulled low - preventing erratic switching during brownout or startup. UVLO recovery delay is ~3.2 µs (ON) and ~7.5 µs (OFF). This behavior ensures predictable, glitch-free operation across the full temperature range and is integral to functional safety in power supply designs using the UCC27614DSGR.

Can the UCC27614DSGR drive GaN HEMTs effectively?

Yes, the UCC27614DSGR is explicitly qualified for GaN HEMT drive per its datasheet description and electrical characteristics. Its 10-A peak source/sink current, 17.5-ns propagation delay, 0.34-Ω pulldown resistance, and –10-V input tolerance directly address GaN-specific challenges: fast switching, Miller immunity, and gate voltage overshoot suppression. TI confirms compatibility with 650-V GaN devices in typical applications - making the UCC27614DSGR a validated solution for high-efficiency GaN-based adapters and data-center PSUs.