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Texas Instruments UCC27624DGNR

Part No.:
UCC27624DGNR
Manufacturer:
Texas Instruments
Category:
Gate Drivers
Package:
8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width)
Datasheet:
AetrixUCC27624DGNR.pdf
Description:
IC GATE DRVR LOW-SIDE 8HVSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:309

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Product details

Overview

UCC27624DGNR from Texas Instruments is a dual-channel, low-side gate driver IC designed to drive MOSFETs, IGBTs, SiC, and GaN power switches in high-frequency switching stages. It delivers 5A peak source/sink current per channel, features 17ns typical propagation delay, –10V input tolerance, and operates from 4.5V to 26V VDD with UVLO - enabling robust control in SMPS, PFC, and motor drive power stages.

For engineers reviewing the UCC27624DGNR datasheet, UCC27624DGNR pinout, UCC27624DGNR application, or UCC27624DGNR equivalent, key selection considerations include dual independent enable inputs, 1ns typical inter-channel delay matching, rail-to-rail output swing, –2V output transient tolerance, and VSSOP-8 (DGN) thermal performance with exposed thermal pad.

Technical Context

The UCC27624DGNR implements two independent, TTL-compatible input channels with hysteresis-based logic thresholds (1V–2V), each paired with a dedicated active-high enable pin (ENA/ENB) and internally pulled up to VDD. Its hybrid output stage combines N- and P-channel MOSFETs to deliver boosted 5A peak source current during Miller plateau transition while maintaining 0.6Ω typical pulldown resistance.

UVLO (4.1V turn-on, 3.8V turn-off) ensures glitch-free startup/shutdown; input and enable pins tolerate –10V for ground-bounce resilience; outputs withstand –2V transients. The device supports parallel operation of both channels for 10A total drive and operates across –40°C to +150°C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VDD Range 4.5V to 26V with UVLO - enables compatibility with 5V, 12V, and 24V auxiliary rails without external regulation
Peak Drive Current ±5A per channel - reduces MOSFET/SiC switch rise/fall times, lowering conduction and switching losses
Propagation Delay 17ns typical - improves dead-time control accuracy and system transient response in high-frequency converters
Delay Matching 1ns typical between channels - critical for paralleled outputs or synchronous rectification timing integrity
Input Voltage Range –10V to 30V - withstands ground bounce in high-dI/dt power stages without false triggering
Output Transient Tolerance –2V on OUTA/OUTB - prevents latch-up or malfunction during gate node ringing or transformer-coupled drive
Junction Temp Range –40°C to +150°C - supports operation in sealed industrial enclosures and automotive under-hood environments

Pinout & Package

VSSOP-8 (DGN) package with 3.00mm × 3.00mm footprint and exposed thermal pad connected to GND for enhanced power dissipation.

Pin/Terminal Circuit Role Design Meaning
1 (ENA) Channel A enable input Active-high TTL-compatible signal; internal 200kΩ pullup ensures default-enable if left floating
2 (INA) Channel A non-inverting input TTL threshold (1V–2V), hysteresis-enhanced; internal 120kΩ pulldown holds OUTA low when unconnected
3 (GND) Power and signal reference Primary return path; thermal pad must be soldered to large copper plane for RθJB = 27.4°C/W
4 (INB) Channel B non-inverting input Functionally identical to INA - supports independent PWM or complementary control
5 (OUTB) Channel B low-side output Rail-to-rail drive (0V to VDD); capable of sinking 5A and sourcing 5A with <10ns fall time
6 (VDD) Bias supply input Requires ≥1μF + 0.1μF ceramic bypassing to GND; powers internal logic and output stages
7 (OUTA) Channel A low-side output Matches OUTB in drive strength and timing; 1ns delay match enables precise paralleling
8 (ENB) Channel B enable input Independent of ENA - allows asymmetric channel control for burst-mode or fault-isolation schemes

Key Features

Feature Design Value
–10V input capability Prevents false triggering during ground bounce in high-power half-bridge or LLC resonant converter layouts
Hybrid output stage N+P-MOSFET architecture delivers instantaneous 5A source boost during Miller plateau, reducing switch turn-on loss
Dual independent enables Enables per-channel shutdown for synchronous rectifier control, light-load efficiency optimization, or fault containment
VDD-independent TTL thresholds Ensures reliable interfacing with 3.3V or 5V microcontrollers and digital PWM controllers without level-shifting
1ns inter-channel delay match Supports paralleled outputs for 10A drive or tightly synchronized dual-switch topologies (e.g., interleaved PFC)

Applications

Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC)

Use Scenario: High-frequency LLC resonant converter operating at 300–700 kHz with GaN FETs.

IC Role / Device Role: Low-side gate driver controlling primary-side half-bridge switches with precise timing and fast slew rate.

Use Value: 17ns propagation delay and 1ns channel matching minimize dead-time uncertainty, improving ZVS margin and efficiency above 96%.

Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage using 650V SiC MOSFETs.

IC Role / Device Role: Dual-channel driver delivering 5A peak current to reduce gate charge time and switching losses.

Use Value: –10V input tolerance prevents misfiring during line-voltage dips and ground noise spikes common in AC front-end designs.

Motor Drive Inverter Solar DC/DC Optimizer

Use Scenario: 3-phase BLDC inverter for industrial pump with 12V auxiliary supply and 150°C ambient.

IC Role / Device Role: Low-side driver for three half-bridge legs, leveraging independent ENA/ENB for phase sequencing and fault shutdown.

Use Value: –40°C to +150°C operating range and 27.4°C/W RθJB ensure thermal stability under sustained 10A load currents.

Use Scenario: Module-integrated DC/DC optimizer with rapid MPPT transients and space-constrained layout.

IC Role / Device Role: Compact gate driver enabling high-density, high-efficiency buck-boost conversion at >500 kHz.

Use Value: VSSOP-8 (DGN) package with thermal pad achieves 48.9°C/W RθJA - critical for passive cooling in sealed PV module enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
UCC27524ADGNR Lower 4A peak drive, no –10V input rating, same VSSOP-8 package and pinout Limited robustness in noisy ground-referenced systems; unsuitable for SiC/GaN with aggressive dV/dt Select only for cost-sensitive 5V/12V legacy SMPS where ground bounce is minimal and 4A drive suffices
LM5113SDX/NOPB 3A peak drive, 25V max VDD, no independent enables, SOIC-8 only Lacks per-channel shutdown and thermal pad; lower drive strength increases switch losses in high-frequency designs Consider only for low-power isolated flyback or auxiliary supplies where board area and thermal performance are secondary

Compared with UCC27624DGNR, UCC27524ADGNR offers pin compatibility but sacrifices –10V input immunity and peak current headroom, while LM5113SDX/NOPB trades drive strength and thermal capability for lower cost in non-demanding applications.

Availability

UCC27624DGNR is available at Aetrix Electronics and suitable for switched-mode power supplies, power factor correction circuits, and motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for UCC27624DGNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion solutions.

The UCC27624DGNR belongs to TI's high-speed gate driver product line, engineered specifically for high-frequency, high-efficiency power stages using wide-bandgap devices - emphasizing robustness, timing precision, and thermal resilience in demanding industrial and renewable energy applications.

FAQ

What is the maximum allowable VDD voltage for the UCC27624DGNR?

The UCC27624DGNR has an absolute maximum VDD rating of 30V, but its recommended operating range is 4.5V to 26V. Operation above 26V risks violating UVLO hysteresis margins and may degrade long-term reliability. For 24V bus applications, the UCC27624DGNR remains within specification with appropriate bypassing and thermal design.

Does the UCC27624DGNR support paralleling of its two output channels?

Yes, the UCC27624DGNR supports paralleling both output channels to achieve up to 10A peak drive current. This requires connecting INA to INB, ENA to ENB, and OUTA to OUTB externally. The 1ns typical delay matching ensures tight timing alignment, minimizing shoot-through risk during transitions.

How does the –10V input capability of the UCC27624DGNR improve system robustness?

The –10V input rating on INA, INB, ENA, and ENB allows the UCC27624DGNR to remain functional during severe ground bounce events - common in high-dI/dt power stages like LLC or SiC inverters. This eliminates need for external clamping diodes and prevents false triggering that could cause shoot-through or overcurrent faults.

What is the purpose of the thermal pad on the UCC27624DGNR VSSOP-8 package?

The exposed thermal pad on the UCC27624DGNR DGN package must be soldered to a large GND copper plane to achieve specified thermal performance. With RθJB = 27.4°C/W, it significantly lowers junction temperature during continuous 5A switching - essential for reliability in compact, thermally constrained designs such as solar optimizers or onboard chargers.

Can the UCC27624DGNR drive SiC and GaN power devices effectively?

Yes, the UCC27624DGNR is explicitly qualified for driving SiC MOSFETs and GaN HEMTs. Its 5A peak source/sink current, 6ns/10ns rise/fall times, and Miller plateau-optimized hybrid output stage reduce gate charge time and switching losses. The –10V input tolerance also accommodates the fast dV/dt transients inherent in wide-bandgap devices.

UCC27624DGNR Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
-
Driven Configuration:
Low-Side
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
4.5V ~ 26V
Logic Voltage - VIL, VIH:
1.2V, 1.8V
Current - Peak Output (Source, Sink):
5A, 5A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
6ns, 10ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-HVSSOP

UCC27624DGNR FAQ

1.How can I place an order for UCC27624DGNR through Aetrix?

Please submit a Request for Quotation (RFQ) for UCC27624DGNR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UCC27624DGNR reliable?

The price and inventory of UCC27624DGNR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC27624DGNR is usually 5 days.

3.What payment methods are accepted for UCC27624DGNR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UCC27624DGNR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UCC27624DGNR?

UCC27624DGNR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UCC27624DGNR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UCC27624DGNR?

For technical support, including UCC27624DGNR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC27624DGNR requirements.

6.How does Aetrix verify that UCC27624DGNR is sourced from the original manufacturer or authorized distributors?

All UCC27624DGNR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC27624DGNR meets industry standards.

7.What is the process for return or replacement of UCC27624DGNR?

All UCC27624DGNR units undergo pre-shipment inspection (PSI). If there is an issue with UCC27624DGNR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UCC27624DGNR part is unused and in its original packaging.

Return procedure for UCC27624DGNR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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