Texas Instruments UCC27624DR

Overview

UCC27624DR from Texas Instruments is a dual-channel, low-side gate driver IC designed to drive MOSFETs, IGBTs, SiC, and GaN power switches in high-frequency switching stages. It delivers 5A peak source/sink current per channel, features 17ns typical propagation delay, –10V input tolerance, and operates from 4.5V to 26V VDD with UVLO - enabling robust control in SMPS, PFC, and motor drive power stages.

For engineers reviewing the UCC27624DR datasheet, UCC27624DR pinout, UCC27624DR application, or UCC27624DR equivalent, this page provides verified technical context, validated pin functions, confirmed thermal and switching specifications, and real-world application implementation guidance for high-efficiency, noise-immune gate drive design.

Technical Context

The UCC27624DR implements independent TTL-compatible input logic with 1V hysteresis and VDD-independent thresholds (1.0V low / 2.0V high), ensuring reliable operation across 3.3V and 5V controllers. Its hybrid output stage combines N- and P-channel MOSFETs to deliver boosted 5A peak source current during the Miller plateau, while maintaining 0.6Ω pulldown resistance for fast turn-off.

Each channel includes a dedicated enable pin (ENA/ENB) with internal 200kΩ pullup and –10V tolerance, allowing independent fault shutdown without affecting the other channel. The device supports parallel operation of both channels for 10A total drive capability and tolerates –2V output transients - critical for gate transformer coupling and ground-bounce resilience in high-dV/dt environments.

Key Specifications

Pinout & Package

UCC27624DR is packaged in an 8-pin SOIC (D package) with PowerPAD™ thermal pad connected to GND. The exposed pad requires soldering to a large copper plane for optimal thermal performance (R_θJB = 69.9°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side gate driver applications.

Compared with UCC27524ADRV and LM5113SDX, the UCC27624DR delivers superior noise immunity (–10V inputs), faster timing (17ns vs. ≥20ns), higher thermal capability (150°C vs. ≤125°C), and true per-channel enable - making it the only option qualified for next-generation SiC/GaN power stages demanding reliability at extreme dV/dt and temperature.

Availability

UCC27624DR is available at Aetrix Electronics and suitable for switched-mode power supplies, motor drives, and solar inverters requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing for production ramp and field replacement.

Supply support for UCC27624DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability power control solutions.

The UCC27624DR belongs to TI's high-speed gate driver product line, engineered specifically for high-efficiency, high-frequency power conversion systems using wide-bandgap semiconductors - emphasizing noise immunity, thermal robustness, and precise timing control.

FAQ

What is the maximum allowable negative voltage on the INA and INB pins of the UCC27624DR?

The UCC27624DR supports –10V on INA and INB pins per Absolute Maximum Ratings. This rating enables direct connection to gate drive transformers and operation in systems with significant ground bounce - eliminating the need for external clamping diodes and reducing BOM count. Exceeding –10V risks permanent damage to the input protection structure.

Can both output channels of the UCC27624DR be paralleled to increase drive current?

Yes, the UCC27624DR supports channel paralleling: connect INA to INB, ENA to ENB, and OUTA to OUTB externally to achieve up to 10A peak drive current. The 1ns typical delay matching ensures synchronized switching, minimizing shoot-through risk. Ensure equal PCB trace lengths and shared gate resistor placement to maintain current balance.

Does the UCC27624DR include undervoltage lockout (UVLO), and what are its thresholds?

Yes, the UCC27624DR integrates UVLO with a rising threshold of 4.1V (typical) and falling threshold of 3.8V (typical), providing 0.3V hysteresis. When VDD drops below 3.8V, both outputs are actively held low by strong internal pulldowns - preventing weak or partial turn-on of power switches during brownout conditions.

What is the purpose of the thermal pad on the UCC27624DR SOIC-8 package?

The exposed thermal pad on the UCC27624DR (D package) must be soldered to a GND-connected copper plane to achieve specified thermal performance. With proper layout, it reduces junction-to-board thermal resistance to 69.9°C/W - critical for sustaining 5A drive current at 150°C junction temperature. Leaving the pad unconnected degrades R_θJA to 126.4°C/W and risks thermal shutdown.

How does the UCC27624DR handle floating input pins like INA or INB?

The UCC27624DR incorporates internal 120kΩ pulldown resistors on INA and INB. If either pin is left floating, the corresponding output (OUTA or OUTB) remains firmly held low - preventing unintended power switch turn-on during initialization, fault conditions, or controller reset. This feature enhances safety compliance in industrial and automotive applications.