Texas Instruments UCC27624QDGNRQ1

Overview

UCC27624QDGNRQ1 from Texas Instruments is a dual-channel, automotive-grade, low-side gate driver IC designed to drive MOSFETs, IGBTs, SiC, and GaN power switches in high-frequency switching stages. It delivers 5A peak source/sink current per channel, features 17ns typical propagation delay, –10V input tolerance, and operates from 4.5V to 26V VDD across –40°C to 150°C junction temperature - enabling robust operation in automotive DC/DC converters and PFC circuits.

For engineers reviewing the UCC27624QDGNRQ1 datasheet, UCC27624QDGNRQ1 pinout, UCC27624QDGNRQ1 application, or UCC27624QDGNRQ1 equivalent, key selection considerations include its AEC-Q100 Grade 1 qualification, dual independent enable inputs (ENA/ENB), 1ns typical inter-channel delay matching, rail-to-rail output swing, and VSSOP-8 (DGN) package with exposed thermal pad for automotive thermal reliability.

Technical Context

The UCC27624QDGNRQ1 employs a hybrid pull-up output stage combining N- and P-channel MOSFETs to deliver boosted 5A peak source current during the Miller plateau, reducing switch turn-on time without shoot-through. Its TTL-compatible, VDD-independent input thresholds (1V–2V) with 1V hysteresis ensure noise immunity in noisy automotive ground-referenced systems.

Each channel integrates independent enable logic with internal 200kΩ pull-up resistors and floating-safe pulldown on inputs (120kΩ), supporting fail-safe operation during controller reset or signal loss. The device includes undervoltage lockout (UVLO) with 4.1V turn-on threshold and 0.3V hysteresis, holding outputs low during insufficient bias - critical for glitch-free startup in 12V/24V automotive rails.

Key Specifications

Pinout & Package

VSSOP-8 (DGN) package: 3.00mm × 3.00mm body with exposed thermal pad connected to GND for enhanced power dissipation in compact automotive layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with UCC27524AQDRQ1 and LM5113QDGSRQ1, the UCC27624QDGNRQ1 provides superior drive strength, tighter timing precision, and unique –10V input robustness - making it the optimal choice for high-frequency, transformer-coupled, or high-noise automotive power stages where reliability and timing margin are critical.

Availability

UCC27624QDGNRQ1 is available at Aetrix Electronics and suitable for automotive DC/DC converters, power factor correction circuits, and motor drives requiring stable component supply with full AEC-Q100 traceability and long-term production support.

Supply support for UCC27624QDGNRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and automotive-grade power management solutions with over 40 years of automotive qualification experience.

The UCC27624QDGNRQ1 belongs to TI's high-speed gate driver product line, engineered specifically for demanding automotive power conversion applications - emphasizing robustness against electrical noise, thermal stress, and voltage transients in safety-critical systems.

FAQ

What is the maximum operating voltage for UCC27624QDGNRQ1?

The UCC27624QDGNRQ1 has an absolute maximum VDD rating of 30V, with a recommended operating range of 4.5V to 26V. This 26V upper limit accommodates automotive load-dump transients while maintaining reliable UVLO operation - the device enters undervoltage lockout below 3.8V and resumes normal function above 4.1V, ensuring controlled startup and shutdown behavior in 12V/24V vehicle electrical systems. The UCC27624QDGNRQ1's internal protection circuitry remains fully functional across this full range.

Does UCC27624QDGNRQ1 support paralleling of its two output channels?

Yes, the UCC27624QDGNRQ1 supports safe paralleling of OUTA and OUTB to achieve up to 10A peak drive current. Its 1ns typical inter-channel delay matching minimizes timing skew that could cause shoot-through in paralleled configurations. To implement this, connect INA to INB, ENA to ENB, and tie OUTA/OUTB together externally - the matched propagation delays and identical output impedance ensure balanced current sharing. The UCC27624QDGNRQ1's hybrid pull-up architecture maintains consistent peak current delivery across both channels under these conditions.

What is the purpose of the –10V input capability on UCC27624QDGNRQ1?

The –10V input rating on UCC27624QDGNRQ1 enables reliable operation in systems experiencing severe ground bounce - common in high-dI/dt motor drives and transformer-coupled gate drive circuits. This specification allows the driver to tolerate negative voltage excursions on INA, INB, ENA, and ENB pins without malfunction or damage, eliminating the need for external clamping diodes. In practice, this lets the UCC27624QDGNRQ1 interface directly with gate-drive transformers or noisy controller outputs, improving system robustness and reducing bill-of-materials cost in automotive EPS and PFC applications.

How does the enable function work on UCC27624QDGNRQ1?

The UCC27624QDGNRQ1 features independent active-high enable inputs (ENA and ENB) with TTL-compatible thresholds (1V low, 2V high) and internal 200kΩ pull-up resistors. When ENA or ENB is pulled low, the corresponding output (OUTA or OUTB) is forced low regardless of the state of INA or INB - enabling rapid fault shutdown. If left floating, the internal pull-up holds the enable high, allowing normal operation. This architecture supports flexible control schemes such as synchronous rectification gating or phase shedding, and the UCC27624QDGNRQ1's enable propagation delay is 17ns typical, matching its input-to-output timing performance.

Is UCC27624QDGNRQ1 compatible with SiC and GaN power devices?

Yes, the UCC27624QDGNRQ1 is explicitly designed to drive wide-bandgap power devices including SiC MOSFETs and GaN HEMTs. Its ±5A peak source/sink current, 6ns/10ns rise/fall times, and 17ns propagation delay meet the stringent gate drive requirements of fast-switching wide-bandgap transistors. The UCC27624QDGNRQ1's rail-to-rail output swing ensures full enhancement of SiC/GaN gates, while its –2V output transient tolerance protects against gate oscillation during hard commutation. TI's datasheet confirms validated operation with common SiC and GaN devices in high-frequency PFC and DC/DC applications.