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Texas Instruments UCC27624QDRQ1
- Part No.:
- UCC27624QDRQ1
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
UCC27624QDRQ1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,279
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Product details
Overview
UCC27624QDRQ1 from Texas Instruments is a dual-channel, automotive-grade, low-side gate driver IC designed for driving MOSFETs, IGBTs, SiC, and GaN power switches in high-frequency power stages. It delivers 5A peak source/sink current per channel, features 17ns typical propagation delay, 1ns typical inter-channel delay matching, and supports –10V input tolerance - enabling robust operation in noisy automotive DC/DC converters and PFC circuits.
For engineers reviewing the UCC27624QDRQ1 datasheet, UCC27624QDRQ1 pinout, UCC27624QDRQ1 application, or UCC27624QDRQ1 equivalent, key selection criteria include its AEC-Q100 Grade 1 qualification (–40°C to +150°C), independent enable pins per channel, rail-to-rail output drive, UVLO with 4.1V turn-on threshold, and SOIC-8 PowerPAD™ package compatibility with thermal pad grounding.
Technical Context
The UCC27624QDRQ1 implements a hybrid pull-up output stage combining N- and P-channel MOSFETs to deliver boosted 5A peak source current during the Miller plateau, reducing switch turn-on time without increasing static ROH. Its TTL-compatible, VDD-independent inputs (1V low / 2V high thresholds) and 1V hysteresis provide noise immunity across temperature while maintaining compatibility with 3.3V/5V controllers.
Each channel has dedicated enable (ENA/ENB) and input (INA/INB) pins with internal 200kΩ pull-ups and 120kΩ pulldowns, allowing floating-pin-safe default operation and independent fault shutdown. The device supports paralleling of channels for 10A drive and tolerates –2V output transients - critical for gate transformer coupling and ground-bounce resilience in automotive SMPS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Range | 4.5V to 26V with UVLO (4.1V turn-on); enables flexible biasing across 12V/24V automotive rails and auxiliary supplies. |
| Peak Drive Current | ±5A per channel; reduces MOSFET/SiC switch rise/fall times to 6ns/10ns, lowering switching losses in high-frequency PFC and DC/DC. |
| Propagation Delay | 17ns typical (tD1x/tD2x); improves dead-time control accuracy and transient response in digitally controlled power stages. |
| Delay Matching | 1ns typical between channels; ensures precise timing alignment when paralleling outputs or driving synchronous rectifiers. |
| Input Voltage Range | –10V to 30V on INA/INB/ENA/ENB; withstands ground bounce in high-dI/dt motor drives and allows direct pulse transformer interface. |
| Output Transient Tolerance | –2V on OUTA/OUTB (200ns pulse); prevents false triggering during gate node ringing in SiC/GaN half-bridges. |
| Junction Temp Range | –40°C to +150°C; qualified for under-hood automotive applications including engine control and battery management systems. |
Pinout & Package
UCC27624QDRQ1 is packaged in an 8-pin SOIC (D) with PowerPAD™ thermal pad (4.90mm × 3.91mm), requiring connection of the exposed pad to GND via large copper area for thermal management and EMI reduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| ENA (Pin 1) | Channel A enable input | Active-high TTL input with 200kΩ internal pull-up; pulling low disables OUTA regardless of INA state - used for fault shutdown or light-load efficiency control. |
| INA (Pin 2) | Channel A non-inverting input | TTL-compatible input (1V/2V thresholds) with 120kΩ internal pulldown; floats low by default, preventing unintended turn-on during startup or controller reset. |
| GND (Pin 3) | Power and signal reference | Primary ground return for all signals and VDD bypass capacitors; thermal pad must be soldered to GND plane for RθJA = 126.4°C/W (SOIC). |
| INB (Pin 4) | Channel B non-inverting input | Functionally identical to INA; enables independent PWM control of two low-side switches in interleaved or phase-shifted topologies. |
| OUTB (Pin 5) | Channel B output | Rail-to-rail driver output capable of sinking 5A and sourcing 5A; tolerates –2V transients - suitable for direct gate connection to SiC FETs. |
| VDD (Pin 6) | Bias supply input | Requires ≥1μF + 0.1μF ceramic bypass to GND; UVLO protects against weak-bias operation that could cause partial enhancement of power devices. |
| OUTA (Pin 7) | Channel A output | Matches OUTB in drive strength and timing; 1ns delay match enables precise paralleling for 10A total drive in high-current motor inverters. |
| ENB (Pin 8) | Channel B enable input | Independent of ENA; allows asymmetric enable control - e.g., disabling one channel during burst-mode operation in LLC resonant converters. |
Key Features
| Feature | Design Value |
|---|---|
| –10V input capability | Enables direct interface with gate drive transformers and survives >5V ground bounce in 48V automotive systems without external clamping diodes. |
| Hybrid pull-up architecture | Delivers brief 5A peak source current during Miller plateau via N-MOS boost, reducing turn-on energy loss in SiC/GaN switches without increasing steady-state ROH. |
| Independent per-channel enable | Allows selective shutdown of one output during fault conditions or light-load modes - critical for synchronous rectification and adaptive dead-time control. |
| VDD-independent TTL thresholds | 1V/2V input logic levels remain stable across 4.5–26V VDD range, eliminating level-shifter requirements when interfacing with 3.3V microcontrollers or digital signal processors. |
| UVLO with hysteresis | 4.1V turn-on / 3.8V turn-off (0.3V hysteresis) prevents oscillation during brown-out; forces outputs low below threshold - ensuring safe power-up sequencing. |
Applications
| Automotive DC/DC Converters | Switched-Mode Power Supplies (SMPS) |
|---|---|
Use Scenario: High-efficiency 48V–12V bidirectional buck-boost converter in mild-hybrid vehicles. IC Role / Device Role / Timing Role: Dual low-side driver controlling parallel SiC MOSFETs in synchronous rectifier legs, with ENA/ENB coordinated for ZVS soft-switching. Use Value: 17ns propagation delay and 1ns channel matching enable precise dead-time control, reducing conduction loss and improving efficiency above 95% at 300kHz. |
Use Scenario: Server PSU with interleaved 2-phase LLC resonant topology using GaN HEMTs. IC Role / Device Role / Timing Role: Low-side driver for synchronous rectifiers, leveraging –10V input tolerance to interface directly with gate drive transformers without rectifier diodes. Use Value: Eliminates two Schottky diodes per channel and associated layout area, reducing BOM cost and parasitic inductance for cleaner gate waveforms. |
| Power Factor Correction (PFC) | Solar Power Inverters |
Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in EV on-board charger. IC Role / Device Role / Timing Role: Driving two parallel 650V SiC MOSFETs in interleaved configuration, with independent ENA/ENB enabling phase shedding at light load. Use Value: 5A drive strength minimizes gate charge time, allowing >200kHz switching while maintaining <1% THD; AEC-Q100 Grade 1 ensures reliability over 15-year vehicle lifetime. |
Use Scenario: String-level DC optimizers in residential solar arrays using discrete Si MOSFETs. IC Role / Device Role / Timing Role: Low-side driver for buck-based MPPT converters, where –2V output transient tolerance prevents false turn-on during PV string voltage transients. Use Value: Withstands lightning-induced surges on PV inputs without latch-up, meeting IEC 61000-4-5 Level 3 (2kV) system-level immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524AQDRQ1 | Lower 4A peak drive, no –10V input rating (–5V max), same SOIC-8 package and pinout. | Lacks ground-bounce resilience for high-dI/dt SiC designs; not rated for direct transformer coupling. | Select only if drive strength and noise immunity requirements are relaxed - e.g., 650V Si MOSFETs below 150kHz. |
| LM5113QDGSRQ1 | Single-channel, 5A driver with bootstrap high-side capability; different pinout and no independent EN pins. | Designed for half-bridge configurations; requires external level-shifting for dual low-side use. | Choose when integrating high-side drive is needed or when board space permits separate single-channel drivers with higher integration. |
Compared with UCC27624QDRQ1, UCC27524AQDRQ1 offers lower cost but reduced noise margin and drive strength, while LM5113QDGSRQ1 adds high-side functionality at the expense of channel independence and pin compatibility - making UCC27624QDRQ1 optimal for dual low-side, transformer-coupled, or AEC-Q100-critical automotive power stages.
Availability
UCC27624QDRQ1 is available at Aetrix Electronics and suitable for automotive DC/DC converters, switched-mode power supplies, and power factor correction circuits requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant performance.
Supply support for UCC27624QDRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of automotive qualification expertise.
The UCC27624QDRQ1 belongs to TI's high-speed gate driver product line, engineered specifically for robust, high-frequency automotive power conversion - emphasizing noise immunity, thermal reliability, and seamless integration with SiC/GaN switches.
FAQ
What automotive qualification does UCC27624QDRQ1 meet?
UCC27624QDRQ1 is AEC-Q100 qualified for Device Temperature Grade 1 (–40°C to +125°C ambient, –40°C to +150°C junction), with HBM ESD classification H1C (±2000V) and CDM classification C6 (±1000V). This certification validates its suitability for under-hood automotive applications including engine control units and battery management systems where thermal and ESD robustness are mission-critical.
Can UCC27624QDRQ1 drive SiC or GaN power devices?
Yes, UCC27624QDRQ1 is explicitly designed for SiC MOSFETs and GaN HEMTs, delivering 5A peak source/sink current and 6ns/10ns rise/fall times to minimize switching losses. Its –2V output transient tolerance and fast 17ns propagation delay ensure clean gate control during high dV/dt transitions common in wide-bandgap devices - confirmed in TI's application reports SLUP487 and SLUP521.
How does the enable function work on UCC27624QDRQ1?
UCC27624QDRQ1 provides independent active-high enable pins (ENA and ENB) for each channel, each with 200kΩ internal pull-up resistors. Pulling ENA or ENB low forces the corresponding output (OUTA or OUTB) low regardless of input state - enabling rapid fault shutdown. If left floating, the pin defaults to HIGH, enabling normal operation - simplifying design in legacy pin-compatible layouts.
What is the purpose of the PowerPAD™ thermal pad on UCC27624QDRQ1?
The exposed thermal pad on UCC27624QDRQ1's SOIC-8 package must be soldered to a GND-connected copper plane to achieve specified thermal performance (RθJA = 126.4°C/W). It lowers junction-to-board thermal resistance (RθJB = 69.9°C/W), improves power dissipation during 5A peak drive, and reduces EMI by providing low-inductance GND return path - essential for stable operation in high-frequency automotive power stages.
Does UCC27624QDRQ1 support paralleling of channels for higher current?
Yes, UCC27624QDRQ1 supports channel paralleling: connecting INA to INB and ENA to ENB allows both outputs to drive a single power device, doubling peak drive current to 10A. Its 1ns typical delay matching ensures simultaneous switching, minimizing shoot-through risk - validated in TI's UCC27624-Q1 datasheet Section 7.2 and application note SLUP521 for high-current motor gate drive.
UCC27624QDRQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 26V
- Logic Voltage - VIL, VIH:
- 1.3V, 1.8V
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 6ns, 10ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
UCC27624QDRQ1 FAQ
1.How can I place an order for UCC27624QDRQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for UCC27624QDRQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UCC27624QDRQ1 reliable?
The price and inventory of UCC27624QDRQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC27624QDRQ1 is usually 5 days.
3.What payment methods are accepted for UCC27624QDRQ1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UCC27624QDRQ1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UCC27624QDRQ1?
UCC27624QDRQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UCC27624QDRQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UCC27624QDRQ1?
For technical support, including UCC27624QDRQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC27624QDRQ1 requirements.
6.How does Aetrix verify that UCC27624QDRQ1 is sourced from the original manufacturer or authorized distributors?
All UCC27624QDRQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC27624QDRQ1 meets industry standards.
7.What is the process for return or replacement of UCC27624QDRQ1?
All UCC27624QDRQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UCC27624QDRQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UCC27624QDRQ1 part is unused and in its original packaging.
Return procedure for UCC27624QDRQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UCC27624QDRQ1 Tags
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