Texas Instruments UCC37322DGN

Overview

UCC37322DGN from Texas Instruments is a noninverting 9-A peak-current low-side MOSFET driver in thermally enhanced MSOP-PowerPAD™ (8-pin) package, delivering ±9 A at the Miller plateau with 20-ns rise/fall times (10-nF load), 25/35-ns propagation delays (falling/rising input), and 4.5–15-V supply operation. It serves as a high-speed gate buffer between PWM controllers and power MOSFETs in high-frequency switch-mode power supplies.

For engineers reviewing the UCC37322DGN datasheet, UCC37322DGN pinout, UCC37322DGN application, or UCC37322DGN equivalent, key selection criteria include peak output current capability, Miller-region drive strength, enable functionality timing, thermal resistance (θ_jc = 4.7°C/W), and noninverting logic compatibility with TTL/CMOS inputs across supply voltage range.

Technical Context

The UCC37322DGN implements TrueDrive - a hybrid bipolar-MOSFET output stage - enabling efficient ±9-A peak sourcing/sinking precisely during the Miller plateau region of MOSFET switching, where dV/dt-induced gate charge demands are highest. Its dual-ground architecture separates AGND (control logic reference) and PGND (power output return) to suppress noise coupling.

Enable (ENBL) is implemented on Pin 3 with internal 100-kΩ pull-up to VDD, active-high logic, 1.7–2.7-V threshold, and 0.25–0.9-V hysteresis; when disabled, OUT forces low regardless of IN state. Input thresholds (VIN_H = 1.6–2.5 V, VIN_L = 0.8–1.5 V) remain stable across 4.5–15-V VDD, ensuring robust TTL/CMOS compatibility.

Key Specifications

Pinout & Package

UCC37322DGN uses an 8-pin MSOP-PowerPAD™ package (3.00 mm × 3.00 mm body) with exposed thermal pad (connected to PGND) for low-junction-to-case thermal resistance (4.7°C/W). AGND and PGND must be connected via a single thick trace directly under the device; separate 0.1-µF decoupling capacitors required between each VDD pin (1 & 8) and its respective ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side MOSFET driver applications.

Compared with UCC37322DGN, UCC37322DR trades thermal performance for legacy SOIC compatibility, while TPS2829DBVR offers ultra-small size at the cost of peak current and enable functionality - making UCC37322DGN optimal for high-power, thermally demanding low-side drive.

Availability

UCC37322DGN is available at Aetrix Electronics and suitable for switch-mode power supplies, motor controllers, Class-D amplifiers, and DC-DC converters requiring stable component supply, high-reliability gate drive, and extended temperature operation.

Supply support for UCC37322DGN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader designing analog, embedded processing, and power management ICs for industrial, automotive, and communications systems.

The UCC37322DGN belongs to TI's high-speed gate driver product line, engineered specifically for high-current, low-latency MOSFET/IGBT interface in high-frequency power conversion and motor control applications.

FAQ

What is the logic configuration of UCC37322DGN?

The UCC37322DGN is a noninverting low-side MOSFET driver: when ENBL = high and IN = high, OUT = high; when IN = low, OUT = low. This matches standard PWM controller outputs driving N-channel MOSFETs referenced to ground. The UCC37322DGN differs from the inverting UCC37321DGN, which complements input polarity.

Does UCC37322DGN require external pull-up resistors on IN or ENBL pins?

No - UCC37322DGN has no internal pull-up on IN, but ENBL features an internal 100-kΩ pull-up to VDD, allowing it to be left floating for default-enable operation. External pull-ups are unnecessary unless specific timing or noise immunity requirements demand stronger biasing beyond the internal resistor's capability.

How does the dual-ground (AGND/PGND) design affect PCB layout for UCC37322DGN?

For UCC37322DGN, AGND and PGND must be connected by a single thick copper trace directly beneath the device, not via plane stitching. Control circuitry (IN, ENBL, decoupling caps) must reference AGND; power MOSFET sources must connect to PGND. Violating this separation risks false triggering due to ground bounce during high-di/dt switching events.

Can UCC37322DGN drive GaN HEMTs effectively?

Yes - UCC37322DGN's ±9-A peak current, 20-ns rise/fall times, and Miller-optimized TrueDrive architecture make it suitable for driving enhancement-mode GaN HEMTs in high-frequency totem-pole PFC and LLC resonant converters. Its 4.5–15-V VDD range aligns with common GaN gate drive requirements (typically 5–12 V).

What is the maximum safe operating frequency when using UCC37322DGN with a 10-nF gate load?

With a 10-nF capacitive load, UCC37322DGN achieves 20-ns rise and 20-ns fall times (typ.), supporting effective switching frequencies up to ~25 MHz in ideal conditions. Real-world limits depend on layout parasitics and MOSFET Q_g; for 500-kHz–2-MHz power converters, UCC37322DGN provides ample margin with minimal dead-time overhead.