Texas Instruments UCC37323DR

Overview

UCC37323DR from Texas Instruments is a dual low-side MOSFET driver IC with dual-inverting logic configuration, delivering ±4 A peak output current at the Miller plateau region, 20 ns/15 ns rise/fall times (1.8 nF load), and operation across 4.5–15 V supply voltage - used to drive power MOSFET gates in high-frequency switch-mode power supplies.

For engineers reviewing the UCC37323DR datasheet, UCC37323DR pinout, UCC37323DR application, or UCC37323DR equivalent, this page delivers verified electrical specs, thermal performance data, SOIC-8 package layout guidance, and real-world selection criteria for gate driver integration in DC-DC converters and solar inverters.

Technical Context

The UCC37323DR implements a Bi-CMOS hybrid output stage combining bipolar and MOSFET transistors in parallel to sustain ±4 A peak sourcing/sinking capability even at low VDD (4.5 V), enabling robust Miller plateau drive without droop. Its TTL/CMOS-compatible inputs feature wide hysteresis (VIN_H = 1.6–2.5 V, VIN_L = 0.8–1.5 V) and are fully independent of supply voltage.

It operates in a fixed dual-inverting functional mode: low input yields high output and vice versa on both channels. Input pins INA and INB must be tied to VDD or GND if unused - floating inputs are prohibited. The device supports output paralleling (OUTA + OUTB) for up to 8 A combined drive, with matched propagation delays (TD1 = 25–40 ns, TD2 = 35 ns typical) ensuring synchronous switching.

Key Specifications

Pinout & Package

UCC37323DR is housed in an 8-pin SOIC (D) package (4.90 mm × 3.91 mm), thermally optimized for PCB-mounted low-side gate drive with exposed pad grounding not applicable (unlike PowerPAD variants). Pin functions are validated per TI SLUS492K Rev. K.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side gate driver applications.

Compared with UCC27323DR and TC4427ACOA, the UCC37323DR offers the optimal balance of commercial-temperature operation, industry-standard packaging, and high-current Miller plateau drive - making it the preferred choice for mid-power DC-DC and solar inverter gate drive where thermal margin and cost are both key constraints.

Availability

UCC37323DR is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, and solar inverters requiring stable component supply, consistent SOIC-8 sourcing, and guaranteed commercial-temperature grade performance.

Supply support for UCC37323DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability power control ICs.

The UCC37323DR belongs to TI's UCCx732x dual gate driver product line, engineered specifically for high-efficiency, high-frequency power conversion systems requiring robust, low-latency MOSFET gate drive with minimal external components.

FAQ

What is the maximum operating junction temperature for UCC37323DR?

The UCC37323DR has a maximum junction temperature (T_J) of +150°C per Absolute Maximum Ratings, but its recommended operating junction temperature is limited to +70°C ambient (0°C to +70°C case temperature range). This reflects its commercial-grade qualification - exceeding this ambient range risks parametric shift and reduced lifetime. Derating curves in the datasheet confirm thermal limits under real load conditions.

Can UCC37323DR drive both N-channel and P-channel MOSFETs simultaneously?

The UCC37323DR is configured as a dual-inverting driver and is designed to drive two N-channel MOSFETs as low-side switches. While its inverting outputs could theoretically interface with P-channel devices in high-side configurations, doing so requires level-shifting circuitry and violates the device's intended use case. TI explicitly specifies UCC37323DR for low-side N-MOSFET drive only - high-side or P-channel applications require dedicated high-side drivers like UCC27531.

Does UCC37323DR support paralleling of its two output channels?

Yes, UCC37323DR supports paralleling of OUTA and OUTB to achieve up to 8 A peak drive current. TI mandates shorting INA and INB together at the IC pad (not upstream), and connecting OUTA and OUTB directly (or via split gate resistors) to minimize layout-induced skew. This configuration is validated in Section 8.2.2.2 of SLUS492K and improves gate drive for MOSFETs with Qg > 50 nC.

What is the purpose of the two N/C pins (1 and 8) on UCC37323DR?

Pins 1 and 8 of the UCC37323DR are designated No Internal Connection (N/C) - they have no electrical or thermal function within the die. TI confirms these pins are electrically isolated and unconnected to substrate or bonding wires. They must remain unconnected on the PCB; no routing, stitching, or thermal pad attachment is permitted or beneficial. Their presence maintains mechanical symmetry and package compatibility with other UCCx732x variants.

How does UCC37323DR's Bi-CMOS output stage improve performance over standard CMOS drivers?

The UCC37323DR's Bi-CMOS output stage combines bipolar transistors (for high-current, low-saturation-voltage sourcing) and MOSFETs (for fast, low-R_DS(on) sinking) in parallel. This architecture delivers ±4 A peak current even at 4.5 V VDD - a capability standard CMOS-only drivers cannot sustain due to R_ON increase at low voltage. It also provides lower output impedance during Miller plateau, reducing gate voltage settling time and improving switching consistency.