Texas Instruments UCC37324DGN

Overview

UCC37324DGN from Texas Instruments is a dual noninverting low-side MOSFET driver in an 8-pin MSOP-PowerPAD™ package, delivering ±4-A peak gate drive current at the Miller plateau region, with 20-ns rise and 15-ns fall times into 1.8-nF load, operating across 4.5–15-V supply range - used to drive N-channel power MOSFETs in high-frequency switch-mode power supplies.

For engineers reviewing the UCC37324DGN datasheet, UCC37324DGN pinout, UCC37324DGN application, or UCC37324DGN equivalent, this page delivers verified electrical specs, thermal performance data, parallel-output configuration guidance, TTL/CMOS input compatibility independent of VDD, and real-world switching behavior under Miller plateau conditions.

Technical Context

The UCC37324DGN implements a Bi-CMOS hybrid output stage-parallel bipolar and MOSFET transistors-that sustains ±4-A peak sourcing/sinking capability even at low VDD (4.5 V), enabling robust gate drive during the Miller plateau where dV/dt is highest. Its dual noninverting logic configuration ensures synchronized high-side gate control for N-channel switches without inversion delay.

Input thresholds (VIN_H = 1.6–2.5 V, VIN_L = 0.8–1.5 V) are voltage-independent and feature wide hysteresis for noise immunity; inputs tolerate reverse currents up to 500 mA. The device supports output paralleling via direct OUTA/OUTB tie-off and INA/INB shorting-enabling 8-A composite drive with matched propagation delays (TD1 = 25–40 ns, TD2 = 35 ns).

Key Specifications

Pinout & Package

UCC37324DGN uses an 8-pin MSOP-PowerPAD™ package (3.0 mm × 3.0 mm) with exposed thermal pad electrically tied to GND - optimized for low junction-to-board thermal resistance (RθJB = 32.6°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual noninverting gate driver applications.

Compared with UCC37324DGN, UCC27324DGN offers wider temperature tolerance but identical electrical performance and layout footprint, while LM5113SDX/NOPB trades dual-channel integration and thermal efficiency for higher per-channel current at lower voltage - making it suitable only for non-synchronized, single-MOSFET applications.

Availability

UCC37324DGN is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, and solar inverters requiring stable component supply, consistent thermal performance, and commercial-temperature-grade reliability.

Supply support for UCC37324DGN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader designing analog ICs, embedded processors, and power management solutions for industrial, automotive, and communications markets.

The UCC37324DGN belongs to TI's UCCx732x dual MOSFET driver product line - engineered specifically for high-current, high-speed gate driving in commercial-temperature power conversion systems where Miller plateau current delivery and thermal efficiency are critical.

FAQ

What is the maximum gate capacitance UCC37324DGN can drive while maintaining 20-ns rise time?

The UCC37324DGN achieves 20-ns rise time into a 1.8-nF capacitive load per channel, as specified in the datasheet. For larger gate capacitances (e.g., >3 nF), rise time increases linearly with CLOAD due to constant-current drive architecture. At 3.3-nF, rise time extends to ~37 ns. To maintain sub-25-ns edges with high-Qg MOSFETs, use parallel outputs or add minimal series gate resistance to damp ringing without degrading speed.

Can UCC37324DGN drive P-channel MOSFETs in high-side configurations?

No - the UCC37324DGN is a dual noninverting low-side driver designed exclusively for N-channel MOSFETs referenced to ground. Its outputs swing from GND to VDD only and cannot source current above the rail. Driving P-channel devices requires either an inverting driver (e.g., UCC37323DGN) or a dedicated high-side floating supply - UCC37324DGN does not support bootstrap or isolated gate drive.

Does UCC37324DGN require external pull-up or pull-down resistors on INA/INB inputs?

No - the UCC37324DGN features internally biased TTL/CMOS-compatible inputs with defined thresholds and hysteresis. However, unused inputs (INA or INB) must be hard-wired to either VDD or GND; leaving them floating risks undefined output states and potential shoot-through in driven MOSFETs. External resistors are unnecessary and may degrade noise immunity.

How does the PowerPAD on UCC37324DGN improve thermal performance compared to SOIC-8 packages?

The MSOP-PowerPAD package of UCC37324DGN reduces junction-to-ambient thermal resistance to 56.6°C/W - 47% lower than the SOIC-8 variant (107.3°C/W). This is achieved via the exposed copper pad soldered directly to a PCB ground plane, lowering RθJB to 32.6°C/W. In practice, this allows UCC37324DGN to sustain 4-A peak drive continuously at 70°C ambient without derating, unlike SOIC-packaged equivalents.

Is UCC37324DGN pin-compatible with UCC27324DGN?

Yes - UCC37324DGN and UCC27324DGN share identical 8-pin MSOP-PowerPAD packaging, pinout, electrical specifications, and functional behavior. The sole difference is operating temperature range: UCC37324DGN is rated 0°C to +70°C, while UCC27324DGN extends to –40°C to +125°C. PCB layout, decoupling, and peripheral circuitry are fully interchangeable.