Taiwan Semiconductor Corporation UGF8JD

Overview

UGF8JD from Taiwan Semiconductor is an 8A, 600V ultra-fast recovery rectifier diode in ITO-220AC package, featuring 13 ns reverse recovery time (IF = 0.5A), 90 nC reverse recovery charge, and 100 A non-repetitive surge current capability - deployed in DC-DC converters and switching inverters requiring high di/dt handling.

For engineers reviewing the UGF8JD datasheet, UGF8JD pinout, UGF8JD application, or UGF8JD equivalent, key selection criteria include junction-to-case thermal resistance (4°C/W), AEC-Q101 qualification availability (UGF8JDH variant), and low forward voltage drop (2.3 V max at 8A, 25°C) under high-frequency switching conditions.

Technical Context

The UGF8JD employs a single-die silicon PN junction optimized for ultra-fast recovery, with trr specified at 13 ns under low-current switching (IF = 0.5A, IR = 1.0A) and up to 30 ns under higher dIF/dt (–50 A/μs). Its design targets minimal Qrr (90 nC) and low IR (≤0.5 µA at 25°C) to reduce switching losses in high-frequency SMPS topologies.

Thermally, the ITO-220AC package delivers R_θJC = 4°C/W, enabling reliable operation up to T_J = 150°C. Polarity is marked on the case, and terminals are matte tin-plated per J-STD-002, supporting lead-free reflow and wave soldering without whisker risk (JESD 201 Class 2).

Key Specifications

Pinout & Package

ITO-220AC package: isolated tab (cathode), two leads - anode and cathode - with polarity marked on case. Mounting torque ≤0.56 N·m. Weight ≈1.70 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH8R06DJF and IXYS MUR860E, the UGF8JD delivers superior high-frequency performance via lower Q_rr and faster t_rr, making it preferred for modern compact converters where EMI and efficiency are critical - without sacrificing surge robustness or thermal capability.

Availability

UGF8JD is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and industrial power supplies requiring stable component supply, AEC-Q101-qualified variants (UGF8JDH), and UL-recognized discrete rectifiers.

Supply support for UGF8JD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.

The UGF8JD belongs to TSC's ultra-fast recovery rectifier product line, engineered specifically for high-efficiency, high-frequency switching power conversion - emphasizing low Q_rr, tight t_rr distribution, and rugged thermal performance in standard power packages.

FAQ

What is the maximum junction temperature rating for UGF8JD?

The UGF8JD has a maximum junction temperature (T_J) rating of +150°C, with operational range from –55°C to +150°C. This allows deployment in high-ambient environments such as enclosed industrial power supplies or under-hood automotive modules when paired with appropriate heatsinking. The UGF8JD's R_θJC of 4°C/W ensures predictable thermal rise under 8 A continuous load.

Is UGF8JD pin-compatible with standard TO-220AC rectifiers?

Yes - UGF8JD uses the ITO-220AC package, which shares identical mechanical footprint, lead spacing, and mounting hole position with industry-standard TO-220AC. However, the ITO-220AC features an electrically isolated tab, unlike conductive-tab TO-220AC variants. Therefore, UGF8JD is mechanically compatible but requires verification of isolation requirements in the target PCB layout.

What is the reverse recovery time specification for UGF8JD under typical operating conditions?

The UGF8JD specifies t_rr = 13 ns (typical) at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A. At higher stress conditions (IF = 1 A, VR = 30 V, dIF/dt = –50 A/μs), t_rr increases to ≤30 ns. These values are measured per JEDEC standards and directly impact switching loss and EMI in high-frequency SMPS using the UGF8JD.

Does UGF8JD meet automotive qualification standards?

The base UGF8JD is not AEC-Q101 qualified, but its variant UGF8JDH is explicitly qualified per AEC-Q101 Rev D for stress testing including temperature cycling, humidity bias, and mechanical shock. Engineers designing for automotive applications must specify UGF8JDH - the "H" suffix denotes full qualification, while UGF8JD is intended for industrial and commercial use.

How does the UGF8JD's forward voltage compare to similar 8A/600V rectifiers?

The UGF8JD has a maximum forward voltage (V_F) of 2.3 V at 8 A and 25°C - competitive with peers like STTH8R06DJF (1.85 V typ) but higher than some Schottky alternatives (not applicable at 600 V). Its V_F remains stable across temperature, and the trade-off favors ultra-fast recovery (13 ns) and low Q_rr (90 nC), making UGF8JD optimal where switching loss dominates conduction loss.