Microchip Technology UPS5817E3/TR13

Overview

UPS5817E3/TR13 from Microsemi is a single Schottky barrier rectifier in Powermite 1® (DO-216AA) package, rated for 20 V peak repetitive reverse voltage, 1.0 A average forward current at TC = 135°C, and maximum forward voltage of 0.45 V at 1.0 A and 25°C. It serves as a low-loss output rectifier in compact DC-DC converters and charge pump circuits.

For engineers reviewing the UPS5817E3/TR13 datasheet, UPS5817E3/TR13 pinout, UPS5817E3/TR13 application, or UPS5817E3/TR13 equivalent, key selection factors include its 15 °C/W junction-to-case thermal resistance, 0.45 V VF max at 1 A, 1.0 mA IR max at 20 V, DO-216AA mechanical footprint, and suitability for high-efficiency, space-constrained power conversion.

Technical Context

This Schottky rectifier uses a planar metal–semiconductor junction to achieve fast switching with no minority-carrier storage delay, enabling operation up to 100 kHz square-wave frequency. Its integral locking bottom metal tab provides direct thermal conduction from die to PCB mounting plane, yielding R_ΘJC = 15 °C/W.

The device operates across –55°C to +150°C junction temperature range and features 105 pF junction capacitance at 5 V reverse bias and 1 MHz, supporting efficient high-frequency rectification without significant capacitive loading.

Key Specifications

Pinout & Package

Package: Powermite 1® (DO-216AA), surface-mount, low-profile (max height 0.20 mm), with full metallic bottom tab for thermal and mechanical anchoring. Dimensions conform to JEDEC DO-216AA standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SS12-E3/5AT and SB120-TB, UPS5817E3/TR13 delivers the lowest forward voltage and best junction-to-case thermal resistance in the DO-216AA footprint-enabling higher power density and improved thermal margin in space-limited power rails.

Availability

UPS5817E3/TR13 is available at Aetrix Electronics and suitable for USB-C power adapters, industrial sensor node power supplies, and automotive body control module pre-regulators requiring stable component supply, consistent DO-216AA packaging, and verified Schottky performance under thermal stress.

Supply support for UPS5817E3/TR13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and power management ICs and discrete components for aerospace, defense, industrial, and communications markets.

The UPS5817E3/TR13 belongs to Microsemi's Powermite® Schottky rectifier product line, engineered for high-efficiency, low-profile DC-DC conversion in thermally demanding and space-constrained applications.

FAQ

What is the maximum junction temperature rating for UPS5817E3/TR13?

The UPS5817E3/TR13 has a specified junction temperature range of –55°C to +150°C. This rating is validated per Microsemi's absolute maximum ratings table and applies under all operating conditions, including continuous 1.0 A forward conduction at TC = 135°C. Thermal design must account for both forward and reverse power dissipation using the provided R_ΘJC = 15 °C/W value to ensure TJ remains within this limit.

Is UPS5817E3/TR13 RoHS compliant and lead-free?

Yes, UPS5817E3/TR13 is fully RoHS compliant with matte tin electrode finish and UL94V-0 epoxy case material. The device meets EU RoHS Directive 2011/65/EU requirements and is compatible with lead-free reflow profiles. No exemptions apply, and the marking "S17" on the package confirms compliance per Microsemi's ordering documentation.

What is the reverse leakage current specification for UPS5817E3/TR13 at elevated temperature?

The UPS5817E3/TR13 specifies I_R ≤ 1.0 mA at 20 V reverse voltage and 25°C. At 125°C, leakage increases to approximately 10 mA based on typical Schottky behavior and Microsemi's thermal derating curves. Designers must calculate worst-case reverse power (P_r = V_R × I_R) and use R_ΘJA = 240 °C/W (on FR-4) to verify TJ remains below 150°C under actual operating conditions.

Can UPS5817E3/TR13 be used in place of a silicon PN rectifier in an existing design?

Yes, UPS5817E3/TR13 can replace many 1 A, 20–30 V silicon PN rectifiers-provided layout accommodates its cathode-connected bottom tab and polarity is observed. Its lower V_F (0.45 V vs. ~0.7–1.1 V) reduces conduction loss, but higher I_R at temperature requires verification of reverse-bias thermal stability. No circuit changes are needed beyond confirming reverse voltage margin and thermal pad connection.

What is the recommended PCB footprint for UPS5817E3/TR13?

The recommended PCB footprint for UPS5817E3/TR13 follows Microsemi's Powermite 1® mechanical drawing: 2.21–2.46 mm length (D), 1.77–2.03 mm width (I), with 0.89–1.14 mm cathode pad extension (J). A minimum 1 oz copper pour under the bottom tab is required; solder mask should be removed from the entire tab area to ensure full thermal and electrical contact per Microsemi Application Note AN-1023.