My Inquiry
My Account
Microchip Technology UPS835LE3/TR13
- Part No.:
- UPS835LE3/TR13
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- Powermite®3
- Datasheet:
-
UPS835LE3/TR13.pdf
- Description:
- DIODE SCHOTTKY 35V 8A POWERMITE3
- Quantity:
- Payment:
- Shipping:
Inventory:4,970
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
UPS835LE3/TR13 from Microsemi (now Microchip Technology) is a surface-mount Schottky barrier rectifier rated for 8 A average forward current and 35 V peak reverse voltage, featuring low forward voltage (0.41 V at 8 A, 125°C) and low thermal resistance (3°C/W junction-to-case), used in DC-DC converter output stages and high-efficiency power supplies.
For engineers reviewing the UPS835LE3/TR13 datasheet, UPS835LE3/TR13 pinout, UPS835LE3/TR13 application, or UPS835LE3/TR13 equivalent, key selection criteria include VF vs. temperature performance, IFSM surge capability, thermal path design via exposed cathode, and compatibility with automated SMT assembly at 260°C/10s reflow profiles.
Technical Context
This device operates as a unidirectional power rectifier leveraging platinum-silicide Schottky barrier technology to achieve low forward voltage drop and fast switching with no minority-carrier storage delay. Its construction places the die directly on an exposed cathode tab for minimal thermal impedance.
The UPS835LE3/TR13 is optimized for continuous conduction mode (CCM) operation in synchronous and non-synchronous buck converters, where low VF reduces conduction losses and high IFSM (100 A) supports transient load steps without thermal runaway.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 35 V - Maximum repetitive reverse voltage the device blocks without breakdown; sets upper limit for input/output rail separation in DC-DC designs. |
| IO (TC = 100°C) | 8 A - Continuous average forward current rating at case temperature of 100°C; defines usable steady-state current in thermally constrained layouts. |
| VF (IF = 8 A, TC = 125°C) | 0.41 V - Confirmed forward voltage at full load and elevated temperature; enables <0.33 W conduction loss per device in 8 A applications. |
| IFSM | 100 A - Non-repetitive peak surge current capability; supports short-duration load transients without bond wire fusing. |
| Rθj–c | 3°C/W - Junction-to-case thermal resistance; confirms efficient heat transfer to PCB copper or heatsink when cathode tab is soldered. |
| dv/dt | 1000 V/μs - Minimum rate-of-rise of reverse voltage the device withstands without spurious turn-on; ensures stability during fast-switching node transitions. |
Pinout & Package
Package: POWERMITE™ 3 surface-mount package with exposed cathode thermal pad (case), molded epoxy body, and gull-wing leads. Dimensions: 5.3 mm × 4.1 mm × 1.1 mm max height. Cathode marked by polarity band and "UPS835L" laser marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input current terminal | Connected to switching node or transformer secondary; carries full forward current into load. |
| Cathode (exposed tab) | Output current terminal & thermal interface | Serves as both electrical return path and primary heat dissipation surface; must be soldered to ≥200 mm² copper pour for Rθj–a ≤ 60°C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile construction | 1.1 mm max height enables use in ultra-thin power modules and stacked PCB assemblies. |
| Direct thermal path | Exposed cathode tab bonded directly to die backside reduces Rθj–c to 3°C/W, enabling higher power density than standard SO-8 packages. |
| Low VF at high temperature | 0.41 V @ 8 A, 125°C improves efficiency retention across automotive and industrial ambient ranges. |
| High dv/dt immunity | 1000 V/μs rating prevents false turn-on during fast-switching SiC/GaN gate driver transitions. |
Applications
| DC-DC Buck Converter Output Rectification | Automotive Infotainment Power Supply |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V output buck converter delivering up to 8 A to SoC or display subsystem. IC Role / Device Role / Timing Role: Primary output rectifier replacing synchronous MOSFET in cost-sensitive non-synchronous designs. Use Value: Low VF minimizes conduction loss at light-to-moderate loads; exposed cathode allows direct thermal coupling to chassis ground plane. | Use Scenario: 24 V battery-fed power module supplying 5 V USB and 3.3 V MCU rails in head unit or ADAS camera ECU. IC Role / Device Role / Timing Role: Secondary-side freewheeling diode in isolated flyback or forward converter. Use Value: 100 A IFSM handles cold-crank surge events; -55°C to +125°C operating range meets AEC-Q101 stress requirements. |
| Industrial PLC I/O Power Stage | Telecom DC Power Distribution |
Use Scenario: 48 V to 12 V intermediate bus converter powering digital I/O modules with variable load profiles. IC Role / Device Role / Timing Role: Output rectifier in fixed-frequency hard-switched forward topology. Use Value: 35 V VRWM provides margin against reflected transients; 60°C/W Rθj–a enables natural convection cooling in sealed enclosures. | Use Scenario: -48 V telecom system with distributed point-of-load converters feeding FPGA, ASIC, and memory rails. IC Role / Device Role / Timing Role: OR-ing diode in redundant 48 V input stage or output rectifier in isolated DC-DC bricks. Use Value: Low IR (1.4 mA @ 25°C) reduces standby leakage; UL94V-0 molding compound satisfies telecom safety standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SS8P3L-E3/5AT (Vishay) | Same 35 V VRRM and 8 A IO rating; VF = 0.47 V @ 8 A, 25°C (higher than UPS835LE3/TR13's 0.51 V @ 25°C); Rθj–c = 4.5°C/W. | Larger footprint (6.1 mm × 4.2 mm); less effective thermal path limits sustained 8 A operation above 85°C ambient. | Preferred where board space permits and lower-cost sourcing is prioritized over thermal performance. |
| MBR835CT (ON Semiconductor) | TO-220AB package; dual common-cathode configuration; VF = 0.55 V @ 8 A, 25°C; Rθj–c = 2.5°C/W but requires through-hole mounting and external heatsink. | Not surface-mountable; incompatible with automated SMT lines; higher profile (9.1 mm) precludes use in slim-profile systems. | Selected only when mechanical robustness and field-serviceability outweigh SMT assembly efficiency. |
Compared with SS8P3L-E3/5AT and MBR835CT, the UPS835LE3/TR13 delivers superior thermal performance in compact SMT form factor, enabling higher power density in space-constrained 8 A applications without forced airflow or external heatsinking.
Availability
UPS835LE3/TR13 is available at Aetrix Electronics and suitable for DC-DC converter output rectification, automotive infotainment power supplies, and industrial PLC I/O power stages requiring stable component supply and long-term production continuity.
Supply support for UPS835LE3/TR13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (acquired by Microchip Technology in 2018) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, communications, and industrial markets.
The UPS835LE3/TR13 belongs to Microsemi's POWERMITE™ Schottky rectifier product line, engineered for high-current, low-VF, surface-mount power conversion in thermally demanding environments.
FAQ
What is the maximum junction temperature rating for the UPS835LE3/TR13?
The UPS835LE3/TR13 has a maximum operating junction temperature (TJ) of +125°C, verified per its published thermal characteristics and derating curves. This rating applies under conditions where case temperature does not exceed 100°C at 8 A DC load. Exceeding TJ = 125°C risks irreversible degradation of the Schottky barrier metallization, and the UPS835LE3/TR13 must be thermally managed using the exposed cathode pad to maintain safe operation.
Does the UPS835LE3/TR13 support lead-free reflow soldering?
Yes, the UPS835LE3/TR13 is qualified for lead-free reflow soldering with a maximum peak temperature of 260°C for 10 seconds, as specified in its mechanical characteristics. The device uses matte tin-plated gull-wing leads and UL94V-0 epoxy molding compound compatible with IPC-J-STD-020D moisture sensitivity level 1. Proper pre-bake is not required, and the UPS835LE3/TR13 performs reliably under standard Pb-free reflow profiles.
How does the UPS835LE3/TR13 compare to standard SO-8 Schottky rectifiers in thermal performance?
The UPS835LE3/TR13 achieves Rθj–c = 3°C/W due to its exposed cathode thermal pad, outperforming typical SO-8 Schottky rectifiers (Rθj–c ≈ 5–7°C/W). This 40–60% improvement allows the UPS835LE3/TR13 to sustain 8 A at higher ambient temperatures without additional heatsinking. In identical PCB layouts, the UPS835LE3/TR13 runs ~15°C cooler than SO-8 alternatives at full load.
Is the UPS835LE3/TR13 suitable for automotive applications?
Yes, the UPS835LE3/TR13 operates across -55°C to +125°C and meets AEC-Q101 stress test requirements when applied within its rated electrical and thermal limits. Its 100 A IFSM rating supports cold-crank transients, and UL94V-0 packaging satisfies automotive flammability standards. While not AEC-Q101 certified as a standalone part, the UPS835LE3/TR13 is widely deployed in automotive infotainment and body control modules where full qualification is supported by system-level testing.
What is the reverse leakage current of the UPS835LE3/TR13 at elevated temperature?
The UPS835LE3/TR13 exhibits a maximum reverse leakage current (IR) of 35.0 mA at rated DC blocking voltage (35 V) and case temperature of +125°C. At +25°C, IR is limited to 1.40 mA. This temperature-dependent behavior is inherent to Schottky diodes and must be accounted for in low-power standby circuits; the UPS835LE3/TR13 remains stable and non-destructive within these bounds.
UPS835LE3/TR13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- Powermite®3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 35 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 510 mV @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1.4 mA @ 35 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite 3
- Operating Temperature - Junction:
- -55°C ~ 125°C
UPS835LE3/TR13 FAQ
1.How can I place an order for UPS835LE3/TR13 through Aetrix?
Please submit a Request for Quotation (RFQ) for UPS835LE3/TR13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPS835LE3/TR13 reliable?
The price and inventory of UPS835LE3/TR13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPS835LE3/TR13 is usually 5 days.
3.What payment methods are accepted for UPS835LE3/TR13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPS835LE3/TR13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPS835LE3/TR13?
UPS835LE3/TR13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPS835LE3/TR13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPS835LE3/TR13?
For technical support, including UPS835LE3/TR13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPS835LE3/TR13 requirements.
6.How does Aetrix verify that UPS835LE3/TR13 is sourced from the original manufacturer or authorized distributors?
All UPS835LE3/TR13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPS835LE3/TR13 meets industry standards.
7.What is the process for return or replacement of UPS835LE3/TR13?
All UPS835LE3/TR13 units undergo pre-shipment inspection (PSI). If there is an issue with UPS835LE3/TR13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPS835LE3/TR13 part is unused and in its original packaging.
Return procedure for UPS835LE3/TR13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPS835LE3/TR13 Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
