Taiwan Semiconductor Corporation US1BHR3G

Overview

US1BHR3G from Taiwan Semiconductor is a 100 V, 1 A ultrafast surface-mount silicon rectifier diode in DO-214AC (SMA) package, featuring 50 ns reverse recovery time, 1.0 V typical forward voltage at 1 A, and 30 A peak surge current - deployed in DC-DC converter output stages and snubber networks for high-frequency switching power supplies.

For engineers reviewing the US1BHR3G datasheet, US1BHR3G pinout, US1BHR3G application, or US1BHR3G equivalent, key selection criteria include repetitive peak reverse voltage (100 V), junction-to-lead thermal resistance (27 °C/W), moisture sensitivity level (J-STD-020 Level 1), RoHS/halogen-free compliance, and DO-214AC mechanical compatibility with automated SMT placement.

Technical Context

This ultrafast rectifier uses a glass-passivated PN junction to achieve low forward voltage drop and fast charge-carrier recombination. Its single-die configuration and DO-214AC package support high-density PCB layouts while maintaining thermal performance up to 150 °C junction temperature.

The device operates with 5 µA maximum reverse leakage at 25 °C and 150 µA at 125 °C, and exhibits 15 pF junction capacitance at 1 MHz and 4 V reverse bias - enabling stable high-frequency operation in flyback and forward converter topologies.

Key Specifications

Pinout & Package

DO-214AC (SMA) surface-mount package with cathode-indicating band; matte tin-plated leads compliant with J-STD-002 solderability and JESD201 Class 2 whisker resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH1R04 and MBR1100, US1BHR3G delivers optimal balance of 100 V rating, 1.0 V VF, 50 ns trr, and low leakage - making it the most thermally robust and cost-effective choice for 48–100 V industrial DC-DC and snubber applications.

Availability

US1BHR3G is available at Aetrix Electronics and suitable for DC-DC converter output rectification, snubber network implementation, and freewheeling diode applications requiring stable component supply, consistent parametric performance, and J-STD-020 Level 1 handling.

Supply support for US1BHR3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.

The US1x series was designed specifically for high-efficiency, high-frequency switching power supplies - emphasizing ultrafast recovery, low VF, and robust SMT packaging for automated manufacturing in space-constrained power stages.

FAQ

What is the maximum junction temperature rating for US1BHR3G?

The US1BHR3G has a maximum junction temperature (TJ MAX) of +150 °C, verified per absolute maximum ratings table in the official Taiwan Semiconductor datasheet N2102. This rating allows reliable operation in enclosed industrial power supplies where ambient temperatures reach 85 °C and power dissipation remains within thermal limits defined by RθJL = 27 °C/W. The US1BHR3G must be mounted on adequate copper area to maintain TJ ≤ 150 °C under full-load conditions.

Is US1BHR3G RoHS and halogen-free compliant?

Yes, US1BHR3G is fully RoHS compliant per EU Directive 2011/65/EU and halogen-free per IEC 61249-2-21. These compliance statements are explicitly confirmed in the "Features" section of the Taiwan Semiconductor US1A–US1M datasheet (Version N2102). The molding compound meets UL 94V-0, and terminals are matte tin-plated to J-STD-002 standards - all verified for US1BHR3G's DO-214AC construction.

What does the 'HR3G' suffix indicate in US1BHR3G?

The 'HR3G' suffix in US1BHR3G denotes Taiwan Semiconductor's tape-and-reel packaging variant: 'H' = halogen-free, 'R3' = 7,500 units per reel, and 'G' = green compound (RoHS-compliant encapsulant). This marking aligns with TSC's ordering code convention in the "Ordering Information" section of datasheet N2102 and distinguishes US1BHR3G from bulk or ammo-pack versions of the same US1B die.

Can US1BHR3G replace US1B in existing designs?

Yes, US1BHR3G is a direct replacement for US1B - both share identical electrical specifications (100 V VRRM, 1 A IF, 50 ns trr, 1.0 V VF), DO-214AC package, and pinout. The HR3G variant adds halogen-free and enhanced RoHS compliance, but maintains full form-fit-function equivalence. No layout or schematic changes are required when upgrading from US1B to US1BHR3G in production.

What is the reverse leakage current of US1BHR3G at elevated temperature?

US1BHR3G exhibits ≤150 µA reverse leakage current (IR) at 125 °C and rated VR, per the "Electrical Specifications" table in datasheet N2102. At 25 °C, IR is ≤5 µA. This temperature-dependent leakage behavior is critical for snubber and high-impedance bias network applications - where excessive IR could cause unintended conduction or reference drift above 100 °C ambient.