Taiwan Semiconductor Corporation US1G

Overview

US1G from Taiwan Semiconductor is a 1 A, 400 V ultrafast surface-mount rectifier diode in DO-214AC (SMA) package, featuring 50 ns reverse recovery time, 1.0 V typical forward voltage at 1 A, and 5 µA max reverse leakage at 25°C - deployed in DC-DC converters and snubber circuits for high-efficiency power conversion.

For engineers reviewing the US1G datasheet, US1G pinout, US1G application, or US1G equivalent, key selection criteria include repetitive peak reverse voltage (400 V), ultrafast recovery (≤50 ns), thermal resistance (R_θJL = 27 °C/W), junction temperature range (–55 to +150 °C), and DO-214AC mechanical compatibility with automated SMT assembly.

Technical Context

The US1G is a single-die, silicon planar epitaxial ultrafast rectifier with glass-passivated junction, optimized for high-frequency switching applications where low forward voltage and fast recovery minimize conduction and switching losses. Its 400 V V_RRM rating and 30 A I_FSM surge capability support robust operation in transient-prone power stages.

Thermally, it delivers R_θJL = 27 °C/W and R_θJA = 75 °C/W, enabling reliable 1 A continuous operation up to +150 °C junction temperature when mounted on standard PCB copper areas. The DO-214AC package provides JESD201 Class 2 whisker resistance and moisture sensitivity level 1 compliance.

Key Specifications

Pinout & Package

DO-214AC (SMA) package: molded epoxy case meeting UL 94V-0, matte tin-plated leads, cathode indicated by band, weight ≈ 0.060 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH1L06 and ES1D, the US1G uniquely balances 400 V V_RRM, 50 ns t_rr, 1.0 V V_F, and DO-214AC packaging - making it optimal for compact, high-frequency SMT power supplies where voltage rating, speed, and form factor intersect.

Availability

US1G is available at Aetrix Electronics and suitable for DC-DC converters, lighting drivers, snubber networks, and freewheeling paths requiring stable component supply, consistent parametric performance, and full traceability across production lots.

Supply support for US1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs for industrial and consumer power systems.

The US1G belongs to TSC's US1x ultrafast rectifier family, engineered specifically for high-efficiency, high-frequency switching power supplies where low forward voltage and fast recovery are critical to minimizing system-level losses.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for the US1G?

The US1G has a maximum repetitive peak reverse voltage (V_RRM) of 400 V, as specified in the absolute maximum ratings table of the Taiwan Semiconductor N2102 datasheet. This rating defines the highest reverse voltage the US1G can block continuously without breakdown under normal operating conditions, making it suitable for 400 V DC bus applications such as industrial power supplies and LED drivers. Exceeding this value risks irreversible junction failure.

What is the typical forward voltage (V_F) of the US1G at 1 A and 25°C?

The typical forward voltage (V_F) of the US1G is 1.0 V at 1 A forward current and 25°C junction temperature, per the electrical specifications table in the N2102 datasheet. This value reflects conduction loss under nominal conditions and is measured using a 0.3 ms pulse test. At elevated temperatures (e.g., 125°C), V_F decreases slightly due to semiconductor physics, but thermal design must still account for worst-case power dissipation.

Is the US1G RoHS and halogen-free compliant?

Yes, the US1G is RoHS compliant per EU Directive 2011/65/EU and halogen-free according to IEC 61249-2-21, as confirmed in the features section of the N2102 datasheet. These compliance statements apply to the entire US1x series, including the US1G, and are verified through material declarations and third-party testing. No lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE substances exceed allowable thresholds.

What is the reverse recovery time (t_rr) specification for the US1G?

The US1G has a maximum reverse recovery time (t_rr) of 50 ns, tested at I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A, per the N2102 datasheet. This ultrafast recovery enables efficient operation in high-frequency switch-mode power supplies (e.g., >100 kHz), reducing switching losses and associated EMI. The t_rr value is representative of the US1A–US1G subgroup and is not shared with higher-voltage variants like US1J (75 ns).

Which package does the US1G use, and what are its key mechanical attributes?

The US1G uses the DO-214AC (SMA) package, as documented in the mechanical data and ordering information sections of the N2102 datasheet. Key attributes include UL 94V-0 flammability-rated epoxy molding, matte tin-plated leads compliant with J-STD-002 solderability, JESD201 Class 2 whisker resistance, cathode band polarity marking, and approximate weight of 0.060 g. Its standardized footprint supports automated placement and reflow soldering per J-STD-020 Level 1.