My Inquiry
My Account
Vishay General Semiconductor - Diodes Division V30DM120HM3/I
- Part No.:
- V30DM120HM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), Variant
- Datasheet:
-
V30DM120HM3/I.pdf
- Description:
- DIODE SCHOTTKY 120V 30A TO263AC
- Quantity:
- Payment:
- Shipping:
Inventory:9,813
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
V30DM120HM3/I from Vishay General Semiconductor is a dual high-voltage Trench MOS Barrier Schottky (TMBS®) rectifier in SMPD (TO-263AC) package, rated for 120 V reverse voltage and 30 A average forward current, with ultra-low forward voltage of 0.46 V at 5 A and 125 °C junction temperature, used in automotive-grade DC/DC converters and reverse battery protection circuits.
For engineers reviewing the V30DM120HM3/I datasheet, V30DM120HM3/I pinout, V30DM120HM3/I application, or V30DM120HM3/I equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C max junction temperature, 250 A surge rating, low-profile 1.7 mm height, and dual-anode single-cathode configuration for OR-ing and freewheeling functions.
Technical Context
This device implements second-generation trench MOS Schottky technology to achieve lower VF and higher efficiency than planar Schottky diodes. It features dual independent anodes sharing one cathode terminal, enabling use as two discrete rectifiers or as a common-cathode dual diode in synchronous rectification or redundancy schemes.
Thermal performance is optimized via low RθJC of 1.2 °C/W and compatibility with 2 oz FR4 PCBs using recommended copper pad layouts. Its MSL Level 1 rating and matte tin-plated leads support lead-free reflow up to 260 °C without degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 120 V - supports input rails up to 100 V DC with safety margin in automotive and industrial SMPS |
| IF(AV) | 30 A - continuous conduction capability per diode at TC = 144 °C with infinite heatsink |
| VF @ 5 A, 125 °C | 0.46 V - enables <0.5 W conduction loss per diode at 5 A, critical for high-efficiency 12 V/24 V systems |
| IFSM | 250 A - withstands cold-crank and load-dump transients in automotive battery systems |
| TJ max | 175 °C - meets under-hood thermal requirements for AEC-Q101-compliant automotive modules |
| RθJC | 1.2 °C/W - allows direct thermal coupling to heatsink or copper plane for high-power density layout |
| Package | SMPD (TO-263AC) - surface-mount, low-profile (1.7 mm), compatible with automated placement and J-STD-020 reflow |
Pinout & Package
Package: SMPD (TO-263AC), 3-terminal surface-mount device with exposed cathode tab for thermal and electrical connection. Dimensions conform to JEDEC TO-263AC outline; case material meets UL 94 V-0.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 (Pin 1) | First diode anode | Independent anode for first rectifier path; electrically isolated from Anode 2 |
| Anode 2 (Pin 2) | Second diode anode | Independent anode for second rectifier path; enables dual-input OR-ing or split-current paths |
| Cathode (Pin 3 / Tab) | Common cathode | Exposed metal tab serves as both thermal interface and shared cathode node; must be soldered to large copper area |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS power stages |
| Trench MOS Schottky Gen 2 | Reduces VF by ~15 % vs. Gen 1 at 30 A, lowering conduction losses in high-current DC/DC stages |
| MSL Level 1, 260 °C peak | Enables single-pass lead-free reflow without moisture-related delamination or popcorn failure |
| Halogen-free, RoHS-compliant | Meets EU Directive 2011/65/EU and IPC-1752A material declaration requirements |
| Very low profile (1.7 mm) | Supports ultra-thin power modules and space-constrained automotive ECUs where height ≤ 2 mm is mandatory |
Applications
| Automotive Reverse Battery Protection | High-Frequency DC/DC Converter Output Rectification |
|---|---|
Use Scenario: Protects vehicle infotainment and ADAS ECUs from damage during incorrect battery terminal connection. IC Role / Device Role / Timing Role: Dual-anode configuration allows single-device implementation of back-to-back series protection without external MOSFETs. Use Value: Eliminates need for discrete P-channel MOSFET + driver; leverages 175 °C TJ max and AEC-Q101 qualification for under-hood reliability. | Use Scenario: Used in secondary-side synchronous rectification of 300 kHz–1 MHz isolated DC/DC converters in server PSUs and telecom bricks. IC Role / Device Role / Timing Role: Functions as low-VF freewheeling diode pair to minimize conduction loss during dead-time intervals. Use Value: 0.46 V VF at 5 A/125 °C reduces output rectifier loss by >30 % vs. standard Schottky, improving full-load efficiency by 0.8–1.2 %. |
| OR-ing Diode for Redundant Power Supplies | Industrial Freewheeling Diode in Motor Drives |
Use Scenario: Enables seamless switchover between dual 24 V power supplies in PLC backplanes and rail signaling systems. IC Role / Device Role / Timing Role: Each anode connects to a separate supply rail; shared cathode feeds common load bus, providing automatic diode-OR functionality. Use Value: Dual-anode integration eliminates two discrete diodes and associated layout area; 250 A IFSM handles hot-swap inrush without derating. | Use Scenario: Placed across inductive loads in 24–48 V brushless DC motor gate drivers and HVAC blower modules. IC Role / Device Role / Timing Role: Provides fast, low-loss flyback path during PWM turn-off to suppress voltage spikes and reduce EMI. Use Value: 1.2 °C/W RθJC enables direct mounting to heatsink or thick copper, sustaining 30 A IF(AV) without forced air in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| V30DM120-M3/I | Same die, non-AEC-Q101; identical electrical specs and package; no automotive qualification testing | Commercial/industrial only; not suitable for automotive production or AEC-compliant BOMs | Select when automotive qualification is unnecessary and cost sensitivity outweighs qualification overhead |
| STPS30H100CG-TR | 100 V VRRM, 30 A IF(AV), TO-247AC package; VF = 0.72 V @ 30 A, 150 °C; no dual-anode topology | Requires two devices for dual-path operation; larger footprint and higher thermal resistance (RθJC = 2.5 °C/W) | Choose only if 100 V rating suffices and TO-247 mechanical fit is required over SMPD |
Compared with V30DM120-M3/I, the V30DM120HM3/I adds AEC-Q101 validation and extended temperature screening but shares identical electrical behavior; versus STPS30H100CG-TR, it offers higher voltage rating, integrated dual-anode topology, lower VF at high temperature, and superior thermal performance in compact surface-mount form.
Availability
V30DM120HM3/I is available at Aetrix Electronics and suitable for automotive reverse battery protection, high-frequency DC/DC converter output rectification, and OR-ing diode applications requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.
Supply support for V30DM120HM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in power diodes, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The V30DM120HM3/I belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered specifically for high-efficiency, high-temperature automotive and industrial power conversion where low VF and robust surge capability are critical.
FAQ
What is the maximum junction temperature rating for the V30DM120HM3/I?
The V30DM120HM3/I has a maximum junction temperature (TJ max) of +175 °C, validated per AEC-Q101 stress testing. This rating enables reliable operation in under-hood automotive environments and sealed industrial enclosures where ambient temperatures exceed 105 °C. The device maintains specified VF and IR performance up to this limit, and thermal design must ensure junction-to-case or junction-to-ambient temperature rise stays within RθJC = 1.2 °C/W or RθJA = 48 °C/W limits respectively. Derating curves in the datasheet confirm 30 A IF(AV) capability at TC = 144 °C.
Is the V30DM120HM3/I pin-compatible with the V30DM120-M3/I?
Yes, the V30DM120HM3/I is mechanically and electrically pin-compatible with the V30DM120-M3/I - both use identical SMPD (TO-263AC) package with Anode 1, Anode 2, and Cathode terminals in the same physical layout and solder pad footprint. The only difference is that V30DM120HM3/I undergoes additional AEC-Q101 qualification testing and screening, while V30DM120-M3/I is intended for commercial/industrial use. No PCB redesign or layout change is needed when upgrading from M3/I to HM3/I.
What does the "HM3" suffix indicate in V30DM120HM3/I?
The "HM3" suffix in V30DM120HM3/I denotes halogen-free, RoHS-compliant construction with full AEC-Q101 qualification for automotive applications. It distinguishes this variant from the base "M3" version (e.g., V30DM120-M3/I), which shares the same die and package but lacks automotive stress testing and screening. The "I" suffix indicates tape-and-reel packaging (2000 units per 13-inch reel). All HM3 parts meet JESD201 Class 2 whisker resistance and MSL Level 1 reflow compatibility.
Can the V30DM120HM3/I be used as two independent Schottky diodes?
Yes, the V30DM120HM3/I contains two fully isolated anodes (Pin 1 and Pin 2) sharing a common cathode (Pin 3/tab), allowing it to function as two independent Schottky rectifiers in a single package. This configuration supports applications such as dual-input OR-ing, redundant power path selection, or separate freewheeling paths in multi-phase topologies. Electrical isolation between anodes is confirmed by zero inter-anode capacitance and absence of internal connection - each anode-cathode path exhibits identical VF, IR, and switching characteristics per the datasheet.
What is the typical forward voltage of the V30DM120HM3/I at 30 A and 125 °C?
The typical forward voltage (VF) of the V30DM120HM3/I at 30 A and 125 °C is 0.73 V, with a maximum of 0.81 V per the datasheet's Electrical Characteristics table. This low VF value directly reduces conduction losses - at 30 A, power dissipation remains below 22.5 W per diode - making the V30DM120HM3/I especially effective in high-current, high-temperature applications like automotive DC/DC converters and industrial motor drives where thermal headroom is constrained.
V30DM120HM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- eSMP®, TMBS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), Variant
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 120 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.06 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 mA @ 120 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AC (SMPD)
- Operating Temperature - Junction:
- -40°C ~ 175°C
V30DM120HM3/I FAQ
1.How can I place an order for V30DM120HM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for V30DM120HM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for V30DM120HM3/I reliable?
The price and inventory of V30DM120HM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V30DM120HM3/I is usually 5 days.
3.What payment methods are accepted for V30DM120HM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V30DM120HM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for V30DM120HM3/I?
V30DM120HM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your V30DM120HM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for V30DM120HM3/I?
For technical support, including V30DM120HM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V30DM120HM3/I requirements.
6.How does Aetrix verify that V30DM120HM3/I is sourced from the original manufacturer or authorized distributors?
All V30DM120HM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V30DM120HM3/I meets industry standards.
7.What is the process for return or replacement of V30DM120HM3/I?
All V30DM120HM3/I units undergo pre-shipment inspection (PSI). If there is an issue with V30DM120HM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The V30DM120HM3/I part is unused and in its original packaging.
Return procedure for V30DM120HM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
V30DM120HM3/I Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
