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Vishay General Semiconductor - Diodes Division V7N3M63-M3/I

Part No.:
V7N3M63-M3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
8-PowerVDFN
Datasheet:
AetrixV7N3M63-M3/I.pdf
Description:
7A, 60V DFN33A TMBS RECT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

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Product details

Overview

V7N3M63-M3/I from Vishay General Semiconductor is a surface-mount Trench MOS Barrier Schottky (TMBS®) rectifier in DFN33A package, rated for 60 V reverse voltage, 7 A average forward current, and 120 A surge capability, with low 0.43 V forward voltage at 3.5 A and 125 °C junction temperature-used in DC/DC converters and polarity protection circuits.

For engineers reviewing the V7N3M63-M3/I datasheet, V7N3M63-M3/I pinout, V7N3M63-M3/I application, or V7N3M63-M3/I equivalent, key selection criteria include its TMBS Gen3 ultra-low leakage, side-wettable DFN33A footprint for AOI compatibility, AEC-Q101-qualified variant availability, and thermal resistance of 2.9 °C/W junction-to-mount.

Technical Context

This device implements a single-anode, four-terminal cathode configuration in a compact DFN33A package, enabling high-current conduction through parallel anode paths while maintaining low thermal resistance (RθJM = 2.9 °C/W). Its TMBS Gen3 architecture delivers <0.015 mA reverse leakage at 60 V and 25 °C, and <2.5 mA at 125 °C.

The rectifier operates across -40 to +175 °C junction temperature range, supports 260 °C peak reflow per J-STD-020 MSL Level 1, and achieves 1060 pF typical junction capacitance at 4.0 V and 1 MHz-optimized for high-frequency switching in space-constrained power stages.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 60 V - maximum repetitive reverse blocking voltage without breakdown
IF(AV) 7 A - average forward current with infinite heatsink; derates to 2.8 A in free air on FR4
VF @ 3.5 A, 125 °C 0.43 V - low conduction loss enabling high-efficiency operation at elevated temperatures
IFSM 120 A - peak surge current handling for transient load conditions like motor startup
TJ max. +175 °C - extended junction temperature rating supports under-hood and industrial environments
CJ 1060 pF - junction capacitance impacts switching speed and EMI in high-frequency DC/DC topologies
RθJM 2.9 °C/W - low junction-to-mount thermal resistance enables efficient heat transfer to PCB copper

Pinout & Package

Package: DFN33A - leadless, halogen-free, RoHS-compliant, side-wettable flanks for automated optical inspection (AOI), 3.40 mm × 2.23 mm × 0.88 mm profile.

Pin/Terminal Circuit Role Design Meaning
1 Anode Primary anode connection; electrically tied to pins 2, 3, and 4 internally
2 Anode Secondary anode terminal; parallel path reduces effective series resistance
3 Anode Third anode terminal; contributes to current sharing and thermal spreading
4 Cathode (K) Single large-area cathode pad; serves as primary thermal and electrical return path

Key Features

Feature Design Value
TMBS Gen3 technology Reduces reverse leakage to ≤2.5 mA at 60 V and 125 °C versus ≥10 mA in prior generations
Side-wettable DFN33A Enables reliable solder joint inspection via AOI without X-ray, improving manufacturing yield
Low-profile height (0.88 mm) Supports ultra-thin power modules and portable electronics with strict Z-height constraints
MSL Level 1 rating Allows unlimited floor life and single 260 °C reflow without baking preconditioning
AEC-Q101 qualification option V7N3M63HM3/I variant meets automotive stress testing for under-hood power conversion

Applications

DC/DC Converters Polarity Protection

Use Scenario: Synchronous buck converter output stage in telecom power supplies operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Freewheeling rectifier replacing body diode of synchronous MOSFET to reduce conduction loss.

Use Value: 0.43 V VF at 125 °C lowers power dissipation by ~1.2 W vs. standard Schottky, improving efficiency by 1.8% at 7 A load.

Use Scenario: Reverse-voltage protection in 12 V battery-powered IoT gateways with limited PCB area.

IC Role / Device Role / Timing Role: Low-loss series-blocking diode placed before main regulator input.

Use Value: 60 V VRRM and 175 °C TJ max. ensure robustness against load dump transients and ambient heating in sealed enclosures.

High-Frequency Inverters Freewheeling Diodes

Use Scenario: Auxiliary power supply in servo drive inverters switching at 20–40 kHz.

IC Role / Device Role / Timing Role: Output rectifier in isolated flyback auxiliary winding.

Use Value: 1060 pF CJ minimizes capacitive turn-on loss during high dv/dt transitions, reducing EMI filter burden.

Use Scenario: Inductive load snubbing in BLDC motor gate driver power rails.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling path for back-EMF energy recirculation.

Use Value: 120 A IFSM withstands repeated inductive kick events without degradation, extending system lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
V7N3M63HM3/I AEC-Q101 qualified; identical electrical specs but validated for automotive temperature cycling and humidity testing Required for automotive infotainment power rails and ADAS camera modules Select when automotive qualification and traceable lot documentation are mandatory
SS7P6M (ON Semiconductor) Same 60 V / 7 A rating but TO-277 package; higher RθJA (150 °C/W), no side-wettable flanks Suitable for manual assembly or legacy layouts where DFN rework is impractical Choose only if board-level AOI is unavailable or thermal interface to heatsink is preferred over PCB copper spread

Compared with V7N3M63-M3/I, the V7N3M63HM3/I offers identical performance with added automotive reliability validation, while SS7P6M trades compact DFN integration and AOI support for through-hole-compatible packaging and simpler thermal management via external heatsinking.

Availability

V7N3M63-M3/I is available at Aetrix Electronics and suitable for DC/DC converters, polarity protection circuits, and high-frequency inverters requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for V7N3M63-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and MOSFETs, with emphasis on power efficiency, reliability, and automotive-grade qualification.

The V7N3M63-M3/I belongs to Vishay's TMBS® Gen3 Schottky rectifier product line, engineered specifically for high-current, high-temperature, and high-frequency power conversion in space-constrained applications.

FAQ

What is the maximum junction temperature rating for the V7N3M63-M3/I?

The V7N3M63-M3/I has a maximum junction temperature (TJ max.) of +175 °C, enabling operation in demanding environments such as automotive engine compartments or industrial motor drives where ambient temperatures exceed 125 °C. This rating is validated per JEDEC standards and supported by its DFN33A package thermal design.

Does the V7N3M63-M3/I have AEC-Q101 qualification?

The V7N3M63-M3/I itself is the commercial-grade version; however, the pin-identical V7N3M63HM3/I variant carries full AEC-Q101 qualification. Both share identical electrical characteristics and DFN33A mechanical form factor, differing only in test documentation and lot traceability for automotive use cases.

How does the side-wettable flank feature benefit manufacturing of the V7N3M63-M3/I?

The side-wettable flanks on the V7N3M63-M3/I's DFN33A package allow automatic optical inspection (AOI) systems to verify solder fillet quality without requiring X-ray imaging. This reduces final-test cost and improves first-pass yield in high-volume SMT lines producing power supplies and motor controllers.

What is the thermal resistance junction-to-mount (RθJM) for the V7N3M63-M3/I?

The V7N3M63-M3/I has a typical RθJM of 2.9 °C/W, measured per JEDEC 51-14 TDIM method. This low value reflects efficient heat transfer from the die directly into the PCB copper mount pad, making it suitable for thermally dense layouts where heatsinks are impractical.

Can the V7N3M63-M3/I replace traditional through-hole Schottky diodes in existing designs?

Direct replacement of through-hole diodes with the V7N3M63-M3/I requires PCB layout revision due to its DFN33A surface-mount footprint and four-terminal configuration. While electrical ratings align with many TO-277 devices (e.g., SS7P6M), the V7N3M63-M3/I demands updated stencil design and AOI setup for reliable assembly.

V7N3M63-M3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
TMBS®
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
60 V
Current - Average Rectified (Io):
2.8A
Voltage - Forward (Vf) (Max) @ If:
640 mV @ 7 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
15 µA @ 60 V
Capacitance @ Vr, F:
1060pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN33A
Operating Temperature - Junction:
-40°C ~ 175°C

V7N3M63-M3/I FAQ

1.How can I place an order for V7N3M63-M3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for V7N3M63-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for V7N3M63-M3/I reliable?

The price and inventory of V7N3M63-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for V7N3M63-M3/I is usually 5 days.

3.What payment methods are accepted for V7N3M63-M3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for V7N3M63-M3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for V7N3M63-M3/I?

V7N3M63-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your V7N3M63-M3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for V7N3M63-M3/I?

For technical support, including V7N3M63-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your V7N3M63-M3/I requirements.

6.How does Aetrix verify that V7N3M63-M3/I is sourced from the original manufacturer or authorized distributors?

All V7N3M63-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that V7N3M63-M3/I meets industry standards.

7.What is the process for return or replacement of V7N3M63-M3/I?

All V7N3M63-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with V7N3M63-M3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The V7N3M63-M3/I part is unused and in its original packaging.

Return procedure for V7N3M63-M3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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