Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division VBUS03N1-HD1-G3-08

Part No.:
VBUS03N1-HD1-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
0402 (1006 Metric)
Datasheet:
AetrixVBUS03N1-HD1-G3-08.pdf
Description:
3.3V;IR=0.1UA;IP=4A;P=90W;CD=0.4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,426

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

VBUS03N1-HD1-G3-08 from Vishay Semiconductors is a unidirectional ESD protection diode in DFN1006-2A package, designed for single-line high-speed data lines. It provides ±16 kV IEC 61000-4-2 ESD immunity, 0.7 pF typical load capacitance, and 3.3 V reverse stand-off voltage, enabling use in USB 3.0, HDMI, and Thunderbolt interfaces.

For engineers reviewing the VBUS03N1-HD1-G3-08 datasheet, VBUS03N1-HD1-G3-08 pinout, VBUS03N1-HD1-G3-08 application, or VBUS03N1-HD1-G3-08 equivalent, key selection criteria include ultra-low capacitance, AEC-Q101 qualification option, clamping performance at 4 A peak pulse current, and compatibility with automated optical inspection due to e3 Sn plating.

Technical Context

The VBUS03N1-HD1-G3-08 operates as a unidirectional transient voltage suppressor, clamping positive overvoltage transients to ground while blocking reverse leakage below 0.1 μA at 3.3 V. Its DFN1006-2A footprint minimizes parasitic inductance, enabling fast response to ESD events without signal distortion.

It meets IEC 61000-4-2 (±16 kV contact/air) and IEC 61000-4-5 (4 A, 8/20 μs) standards, with a dynamic resistance of 0.8 Ω and clamping voltage of 13 V at 4 A. The device is rated for junction temperatures from –55 °C to +150 °C and supports reflow soldering up to 260 °C peak.

Key Specifications

ParameterValue and Actual Design Meaning
ESD Rating±16 kV contact & air discharge per IEC 61000-4-2 - ensures robust system-level ESD survivability in consumer and automotive ports
Load Capacitance0.7 pF typ. at 0 V and 1 MHz - preserves signal integrity on >5 Gbps differential links like USB 3.0 Gen1
Reverse Stand-off Voltage3.3 V - matches standard I/O rail voltage, preventing conduction during normal operation
Clamping Voltage13 V max at 4 A IPPM - limits transient overshoot to safe levels for downstream PHY receivers
Leakage Current0.1 μA max at 3.3 V - avoids DC loading on sensitive high-impedance data lines
PackageDFN1006-2A (1.0 × 0.6 × 0.45 mm) - enables placement adjacent to connectors with minimal board area impact

Pinout & Package

DFN1006-2A package: 2-terminal surface-mount device with cathode marked by bar on top surface; dimensions 1.0 mm × 0.6 mm × 0.45 mm max height; exposed copper lead frame with e3 Sn plating for AOI-compatible solder joint inspection.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeConnected to protected signal line (e.g., USB D+); conducts during negative transients
Pin 2CathodeConnected to system ground; provides low-impedance path for ESD current dissipation

Key Features

FeatureDesign Value
Ultra-low capacitance0.7 pF typ. - enables use on >5 Gbps serial interfaces without insertion loss degradation
AEC-Q101 qualification optionAvailable variant supports automotive infotainment and ADAS data port requirements
e3 Sn platingTin-plated exposed side walls allow 100% AOI verification of solder fillet without X-ray
Low profile0.45 mm max height - fits under low-clearance shields and stacked PCB assemblies

Applications

USB 3.0 SuperSpeed InterfaceHDMI 2.0 Data Channel

Use Scenario: Protecting differential TX/RX pairs in host/device USB 3.0 ports against ESD events during hot-plug insertion.

IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between signal line and ground, operating outside signal path during normal operation.

Use Value: 0.7 pF capacitance prevents eye diagram closure; ±16 kV rating exceeds USB-IF compliance requirement for external ports.

Use Scenario: Safeguarding TMDS clock and data lanes in HDMI 2.0 source/sink devices exposed to user-handled cables.

IC Role / Device Role / Timing Role: Single-line ESD suppressor per lane, leveraging low dynamic resistance (0.8 Ω) to minimize clamping delay.

Use Value: Clamps transients within 1 ns, preserving 6 Gbps data rate timing margins and avoiding bit errors.

Thunderbolt™ 3 Host PortAutomotive Infotainment Display Link

Use Scenario: Shielding bidirectional high-speed lanes (TX/RX) in Thunderbolt 3 controller I/O where space constraints limit discrete protection options.

IC Role / Device Role / Timing Role: Per-lane unidirectional TVS diode with 3.3 V VRWM aligned to VCCIO rail, minimizing standby power loss.

Use Value: 0.1 μA leakage avoids cumulative current draw across 4+ lanes; DFN1006-2A allows routing under connector footprint.

Use Scenario: Protecting LVDS or FPD-Link III video data lines between head unit and display in vehicles subject to ISO 10605 ESD stress.

IC Role / Device Role / Timing Role: AEC-Q101-qualified variant used per differential pair to meet automotive EMC requirements.

Use Value: Validated operation from –40 °C to +125 °C ambient; 150 °C junction rating supports under-dash thermal environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ3.3ADO-214AC package; 300 pF capacitance; 12.3 V clamping at 12.5 ADesigned for lower-speed, higher-power surge protection (e.g., power rails), not high-speed data linesSelect only if signal bandwidth < 100 MHz and board space permits larger footprint
TPD1E05U06DPYR0.45 pF typ. capacitance; 5.5 V VRWM; 3-pin SOT-563 package with common-anode dual-channel configurationSupports dual-line protection in same footprint but requires layout revision for shared anode routingChoose when protecting two adjacent lines (e.g., USB D+/D–) with tighter capacitance budget

Compared with SMAJ3.3A and TPD1E05U06DPYR, the VBUS03N1-HD1-G3-08 uniquely balances sub-1 pF capacitance, 3.3 V stand-off, and DFN1006-2A size for single-line high-speed interfaces-making it optimal for space-constrained USB/HDMI designs where signal fidelity is critical.

Availability

VBUS03N1-HD1-G3-08 is available at Aetrix Electronics and suitable for USB 3.0 interface protection, HDMI 2.0 data channel safeguarding, and automotive infotainment display link applications requiring stable component supply and consistent parametric performance across production lots.

Supply support for VBUS03N1-HD1-G3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in power management, sensing, and circuit protection components with emphasis on reliability and precision.

The VBUS03N1-HD1-G3-08 belongs to Vishay's ultra-low-capacitance ESD protection diode family, engineered specifically for high-speed digital interfaces where signal integrity and miniaturization are primary design constraints.

FAQ

What is the maximum operating temperature range for the VBUS03N1-HD1-G3-08?

The VBUS03N1-HD1-G3-08 has a specified junction temperature range of –55 °C to +150 °C and a storage temperature range of –65 °C to +150 °C. This wide thermal capability supports deployment in harsh environments such as automotive under-hood or industrial edge computing enclosures where ambient temperatures exceed 85 °C. The device maintains its 0.7 pF capacitance and ±16 kV ESD rating across this full range.

Does the VBUS03N1-HD1-G3-08 support AEC-Q101 qualification?

Yes, the base part VBUS03N1-HD1 is AEC-Q101 qualified; the suffix "-G3-08" denotes RoHS-compliant, lead-free, green packaging with 10 k per 7″ reel. Customers requiring automotive-grade assurance should specify the AEC-Q101 variant (e.g., VBUS03N1-HD1HG3-08) which undergoes stress testing per AEC-Q101-004 and -011 standards. The VBUS03N1-HD1-G3-08 itself is not automatically qualified unless ordered with the "H" environmental code.

How does the clamping behavior of VBUS03N1-HD1-G3-08 compare at 1 A versus 4 A peak pulse current?

At 1 A IPP, the VBUS03N1-HD1-G3-08 clamps to 9.5 V typical; at 4 A IPP (its maximum rated pulse), clamping rises to 13 V typical. This 3.5 V increase reflects inherent dynamic resistance (0.8 Ω), confirming predictable, linear voltage rise under stress. Designers must ensure downstream ICs tolerate ≤13 V transient exposure. The VBUS03N1-HD1-G3-08 datasheet validates this behavior via TLP and IEC 61000-4-5 waveforms.

Can VBUS03N1-HD1-G3-08 be used for bidirectional signal lines like USB 2.0 D+ and D–?

No - the VBUS03N1-HD1-G3-08 is unidirectional and protects only positive transients on the anode-to-ground path. For bidirectional lines such as USB 2.0, a symmetric dual-diode array (e.g., VBUS05M1-03-G3) or separate anode/cathode configurations are required. Using VBUS03N1-HD1-G3-08 on a bidirectional line would leave negative transients unprotected and risk damage during ESD events.

What is the significance of the "e3" marking on VBUS03N1-HD1-G3-08?

The "e3" designation indicates Sn (tin) plating on the exposed side walls of the DFN1006-2A lead frame, compliant with JEDEC J-STD-609. This enables automated optical inspection (AOI) of solder joints without X-ray, reducing manufacturing cost and cycle time. The VBUS03N1-HD1-G3-08's e3 finish also supports Pb-free reflow profiles up to 260 °C peak and eliminates halogenated flux residue concerns in high-reliability assembly.

VBUS03N1-HD1-G3-08 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
0402 (1006 Metric)
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
3.3V (Max)
Voltage - Breakdown (Min):
7V
Voltage - Clamping (Max) @ Ipp:
15V
Current - Peak Pulse (10/1000µs):
4A (8/20µs)
Power - Peak Pulse:
60W
Power Line Protection:
No
Applications:
HDMI, USB
Capacitance @ Frequency:
0.7pF @ 1MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1006-2A

VBUS03N1-HD1-G3-08 FAQ

1.How can I place an order for VBUS03N1-HD1-G3-08 through Aetrix?

Please submit a Request for Quotation (RFQ) for VBUS03N1-HD1-G3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VBUS03N1-HD1-G3-08 reliable?

The price and inventory of VBUS03N1-HD1-G3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VBUS03N1-HD1-G3-08 is usually 5 days.

3.What payment methods are accepted for VBUS03N1-HD1-G3-08?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VBUS03N1-HD1-G3-08 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VBUS03N1-HD1-G3-08?

VBUS03N1-HD1-G3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VBUS03N1-HD1-G3-08 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VBUS03N1-HD1-G3-08?

For technical support, including VBUS03N1-HD1-G3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VBUS03N1-HD1-G3-08 requirements.

6.How does Aetrix verify that VBUS03N1-HD1-G3-08 is sourced from the original manufacturer or authorized distributors?

All VBUS03N1-HD1-G3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VBUS03N1-HD1-G3-08 meets industry standards.

7.What is the process for return or replacement of VBUS03N1-HD1-G3-08?

All VBUS03N1-HD1-G3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VBUS03N1-HD1-G3-08, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VBUS03N1-HD1-G3-08 part is unused and in its original packaging.

Return procedure for VBUS03N1-HD1-G3-08:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

VBUS03N1-HD1-G3-08 Tags

  • VBUS03N1-HD1-G3-08
  • VBUS03N1-HD1-G3-08 PDF
  • VBUS03N1-HD1-G3-08 Datasheet
  • VBUS03N1-HD1-G3-08 Specifications
  • VBUS03N1-HD1-G3-08 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division VBUS03N1-HD1-G3-08
  • Buy VBUS03N1-HD1-G3-08
  • VBUS03N1-HD1-G3-08 Price
  • VBUS03N1-HD1-G3-08 Distributor
  • VBUS03N1-HD1-G3-08 Supplier
  • VBUS03N1-HD1-G3-08 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER