Vishay General Semiconductor - Diodes Division VBUS053AZ-HAF-GS08

Overview

VBUS053AZ-HAF-GS08 from Vishay Semiconductors is a 7-pin ultra-compact ESD protection diode array for USB-OTG bus ports, integrating three 5.5 V data-line protectors (D+, D−, ID) and one 12 V VBUS line protector in a single LLP75-7L package. It delivers ±15 kV IEC 61000-4-2 contact/air ESD immunity on data lines and ±30 kV on VBUS, with 0.7 pF line capacitance and 70–85 pF VBUS capacitance - enabling high-speed signal integrity in portable OTG host devices.

For engineers reviewing the VBUS053AZ-HAF-GS08 datasheet, VBUS053AZ-HAF-GS08 pinout, VBUS053AZ-HAF-GS08 application, or VBUS053AZ-HAF-GS08 equivalent, this device supports critical USB-OTG system-level transient suppression where low-capacitance data-line protection and robust 12 V VBUS clamping must coexist without crosstalk, under space-constrained PCB layouts.

Technical Context

The VBUS053AZ-HAF-GS08 implements a two-die construction: one die integrates three symmetrical bidirectional PN-junction ESD clamps for D+/D−/ID lines (5.5 V working range, 10–12 V clamping at 1 A), while a second dedicated avalanche diode handles VBUS (12 V VRWM, 17.5–20 V clamping at 1 A). Pin 7 serves as common ground for both dies, ensuring galvanic isolation between data and power paths.

Its LLP75-7L package enables 0.55 mm × 0.95 mm footprint and <0.6 mm height, with MSL level 1 soldering compatibility (peak 260 °C). The device meets IEC 61000-4-5 surge immunity (3 A on data lines, 8 A on VBUS) and features e4 finish (NiPdAu) for reliable interconnect reliability.

Key Specifications

Pinout & Package

VBUS053AZ-HAF-GS08 uses the LLP75-7L package: 1.65 mm × 1.05 mm × 0.6 mm body with 0.5 mm pitch, e4 (NiPdAu) terminations, and MSL level 1 moisture sensitivity. Pin 1 is marked by a dot; pin 7 is the common cathode ground plane shared by both dies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar USB-OTG ESD protection applications.

Compared with TPD2EUSB30DRYR and SP1001-01WTG, the VBUS053AZ-HAF-GS08 uniquely integrates matched 5.5 V data-line and 12 V VBUS protection in one ultra-low-profile package - eliminating inter-die timing skew, reducing layout complexity, and enabling true single-component USB-OTG port hardening.

Availability

VBUS053AZ-HAF-GS08 is available at Aetrix Electronics and suitable for USB-OTG host implementations, smartphone docking solutions, and portable medical data loggers requiring stable component supply and guaranteed long-term manufacturability.

Supply support for VBUS053AZ-HAF-GS08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors and passive components, specializing in high-reliability protection, power, and sensing solutions for demanding electronic systems.

The VBUS053AZ-HAF-GS08 belongs to Vishay's USB-OTG ESD protection product line, engineered specifically to address simultaneous high-speed data integrity and high-energy VBUS surge suppression in space-constrained portable interfaces.

FAQ

What is the primary circuit role of the VBUS053AZ-HAF-GS08 in a USB-OTG system?

The VBUS053AZ-HAF-GS08 serves as a monolithic ESD and surge protection device for the entire USB-OTG port: it simultaneously clamps transients on D+, D−, and ID data lines (up to ±15 kV) and the 12 V VBUS supply line (up to ±30 kV), using physically isolated dies to prevent coupling. Its role is to shunt destructive energy away from the SoC's USB PHY and PMIC before damage occurs - confirmed by its dual-path IEC 61000-4-2/4-5 compliance and 0.7 pF / 70–85 pF capacitance split.

Can pins 1, 2, and 3 of the VBUS053AZ-HAF-GS08 be assigned interchangeably to D+, D−, and ID signals?

Yes - pins 1, 2, and 3 of the VBUS053AZ-HAF-GS08 are fully symmetrical and functionally identical bidirectional ESD clamps for the 5.5 V data lines. The datasheet explicitly states "the input pins no. 1, 2 and 3 are symmetrical" and permits any of D+, D−, or ID to connect to any of these pins without performance impact. This symmetry simplifies PCB routing and eliminates pin-mapping errors during layout.

What is the maximum continuous operating voltage on the VBUS pin (pin 6) of the VBUS053AZ-HAF-GS08?

VBUS053AZ-HAF-GS08 supports a maximum continuous operating voltage of 12 V on pin 6 (VBUS), defined as its reverse working voltage (VRWM) at IR = 100 nA. This allows direct integration into USB-OTG systems where VBUS may be supplied at nominal 5 V but exposed to 9–12 V from non-compliant chargers - with clamping beginning at ~15 V (VBR min) and limiting to ≤20 V at 1 A surge current.

How does the VBUS053AZ-HAF-GS08 achieve isolation between data lines and VBUS during surge events?

The VBUS053AZ-HAF-GS08 achieves isolation via a two-die construction: one die handles D+/D−/ID protection, the other handles VBUS, both mounted on a common ground plane (pin 7) but electrically separated. The datasheet confirms "due to the 'two die construction' the VBUS line has a very high isolation to the data lines," preventing destructive coupling - such as a 8 A VBUS surge from propagating to data lines, which is validated by independent clamping voltage curves and line-to-line capacitance <0.5 pF.

Is the VBUS053AZ-HAF-GS08 compatible with automated SMT assembly processes?

Yes - the VBUS053AZ-HAF-GS08 is qualified for standard SMT reflow using J-STD-020 MSL level 1 conditions: peak temperature up to 260 °C, with no floor life limitation. Its LLP75-7L package features e4 (NiPdAu) terminations for reliable solder wetting, and the 0.5 mm pitch and 0.6 mm max height meet IPC-7351B requirements for fine-pitch QFN-like placement. Footprint recommendations are provided in the official Vishay package drawing S8-V-3906.02-014.