Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division VESD24E1-HD1HG3-08

Part No.:
VESD24E1-HD1HG3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
-
Datasheet:
AetrixVESD24E1-HD1HG3-08.pdf
Description:
24V;IR=10NA;IP=4.5A;P=190W;C=30P
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

VESD24E1-HD1HG3-08 from Vishay Semiconductors is a single-line unidirectional ESD-protection diode in DFN1006-2A package, rated for 24 V reverse standoff voltage, 30 kV IEC 61000-4-2 contact/air discharge immunity, and 35 V typical clamping voltage at 4 A (8/20 μs), deployed in automotive infotainment data lines and industrial sensor interfaces.

For engineers reviewing the VESD24E1-HD1HG3-08 datasheet, VESD24E1-HD1HG3-08 pinout, VESD24E1-HD1HG3-08 application, or VESD24E1-HD1HG3-08 equivalent, key selection criteria include its 28 pF capacitance at 0 V, AEC-Q101 qualification status, 0.5 mm max height, low dynamic resistance (0.33 Ω), and compatibility with automated optical inspection due to Sn-plated exposed lead frame sidewalls.

Technical Context

This device operates as a transient voltage suppression (TVS) diode optimized for high-speed signal line protection. Its unidirectional architecture enables precise clamping above 24 V while maintaining sub-1 μA leakage at rated VRWM, and its DFN1006-2A footprint supports dense PCB layouts in space-constrained modules.

The VESD24E1-HD1HG3-08 delivers robust surge handling per IEC 61000-4-5 (175 W peak pulse power, 8/20 μs) and ISO 10605 (30 kV, 330 pF/330 Ω), with TLP-measured clamping stability (35 V at 16 A, 100 ns) and temperature-stable breakdown (24.5–33 V over −40 °C to +150 °C).

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Standoff Voltage24 V - Maximum continuous operating voltage before clamping begins; sets safe margin for 24 V rail protection.
Clamping Voltage (8/20 μs)35–41 V at 4 A - Limits downstream IC voltage stress during surge events without disrupting normal signal integrity.
Capacitance (0 V, 1 MHz)28–31 pF - Low enough to avoid signal degradation on USB 2.0, CAN FD, or LVDS lines up to ~100 MHz.
ESD Immunity±30 kV contact & air (IEC 61000-4-2) - Meets automotive EMC requirements for exposed connectors and ports.
Dynamic Resistance0.33 Ω - Enables fast, low-voltage overshoot response during fast-rising transients like ESD.
PackageDFN1006-2A (1.0 × 0.6 × 0.5 mm) - Enables placement directly at connector entry points with minimal trace inductance.

Pinout & Package

DFN1006-2A package: 1.0 mm × 0.6 mm body, 0.5 mm max height, Sn-plated exposed lead frame sidewalls, MSL level 1, compatible with standard reflow profiles (peak ≤ 260 °C). Cathode marked by bar on side of package.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeConnected to protected signal line; forward-biased during negative transients.
Pin 2CathodeConnected to ground plane; defines clamping reference and conduction path for positive surges.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress per JESD47.
Low-profile DFN1006-2A0.5 mm max height enables integration beneath connectors and in ultra-thin modules (e.g., ADAS camera housings).
Sn-plated exposed sidewallsEnables AOI-based solder joint verification without X-ray; reduces post-soldering inspection cost and cycle time.
1-line unidirectional topologyOptimized for DC-biased signal paths (e.g., RS-485, CAN, LIN), minimizing capacitance vs. bidirectional alternatives.

Applications

Automotive Infotainment Display InterfaceIndustrial CAN FD Bus Node

Use Scenario: Protecting HDMI or FPD-Link III differential pairs between head unit and display panel against ESD from user touchpoints.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed at connector entry to clamp transients before reaching serializer/deserializer ICs.

Use Value: 28 pF capacitance avoids skew or attenuation on 1.5 Gbps links; 30 kV ESD rating exceeds ISO 10605 Class 4 requirements.

Use Scenario: Shielding CAN FD transceivers in factory automation controllers from coupling-induced surges on long cable runs.

IC Role / Device Role / Timing Role: Line-side ESD suppressor on CAN_H/CAN_L lines, co-located with common-mode choke.

Use Value: 35 V clamping ensures transceiver stays within absolute maximum ratings during 4 A surge; AEC-Q101 compliance supports extended field life.

Medical Sensor Signal ConditioningSmart Building PoE-Powered Node

Use Scenario: Safeguarding analog front-end inputs of patient monitoring devices connected to external electrodes or probes.

IC Role / Device Role / Timing Role: Low-leakage (≤0.05 μA) ESD clamp on ±10 V signal paths to preserve DC accuracy and offset stability.

Use Value: Sub-1 μA IR at 24 V prevents loading of high-impedance sensor outputs; 24 V VRWM matches supply-referenced bias networks.

Use Scenario: Protecting Ethernet PHY interface pins on PoE-powered lighting controllers exposed to building-wide ESD events.

IC Role / Device Role / Timing Role: Secondary-level ESD protection on MDI side, downstream of primary gas discharge tube or polymer TVS.

Use Value: 175 W peak pulse power (8/20 μs) handles residual energy after upstream suppression; DFN1006-2A allows placement near RJ45 jack.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD-protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ24A-E3/57TDO-214AC package (4.5 × 2.7 mm), higher clamping (43 V), 100 pF capacitanceNot suitable for high-speed data lines; intended for power rail or low-frequency signal protectionSelect when board space permits larger footprint and lower capacitance is not required
TPD2E001DRSR2-channel bidirectional, 12 pF, 5 V VRWM, DFN1006-6 packageDesigned for USB 2.0 or I²C; incompatible with 24 V working voltage requirementChoose only for dual-line, low-voltage (<6 V), bidirectional signal protection

Compared with SMAJ24A-E3/57T and TPD2E001DRSR, the VESD24E1-HD1HG3-08 uniquely balances 24 V operation, 28 pF capacitance, AEC-Q101 qualification, and ultra-small DFN1006-2A size-making it optimal for automotive and industrial high-speed signal line protection where space, voltage rating, and ESD robustness are jointly constrained.

Availability

VESD24E1-HD1HG3-08 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial CAN FD nodes, medical sensor interfaces, and smart building PoE-powered devices requiring stable component supply across multi-year production cycles.

Supply support for VESD24E1-HD1HG3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in power management, sensing, and protection components with emphasis on reliability, precision, and automotive-grade qualification.

The VESD24E1-HD1HG3-08 belongs to Vishay's ESD-Protection Diode family, engineered specifically for high-density, high-reliability transient suppression in automotive and industrial signal-path applications demanding AEC-Q101 compliance and low parasitic capacitance.

FAQ

What is the maximum operating temperature range for the VESD24E1-HD1HG3-08?

The VESD24E1-HD1HG3-08 has a junction temperature range of −55 °C to +150 °C and a storage temperature range of −55 °C to +150 °C. This wide thermal envelope supports deployment in under-hood automotive modules and industrial environments with ambient extremes. The device maintains specified clamping performance and leakage current across this full range, as verified per AEC-Q101 stress testing protocols.

Is the VESD24E1-HD1HG3-08 qualified to AEC-Q101?

Yes, the VESD24E1-HD1HG3-08 is AEC-Q101 qualified. This qualification confirms that the device meets rigorous automotive reliability standards-including high-temperature reverse bias, temperature cycling, and ESD stress tests-making it suitable for use in automotive infotainment, ADAS, and body electronics. The "H" in the ordering code (VESD24E1-HD1HG3-08) explicitly denotes AEC-Q101 qualification.

What is the clamping voltage of the VESD24E1-HD1HG3-08 under an 8/20 μs surge?

The VESD24E1-HD1HG3-08 exhibits a typical clamping voltage of 35 V and a maximum of 41 V at 4 A under an 8/20 μs waveform per IEC 61000-4-5. This clamping behavior ensures protected ICs remain within their absolute maximum voltage ratings during surge events. The low dynamic resistance (0.33 Ω) contributes to tight clamping control and minimal overshoot.

Does the VESD24E1-HD1HG3-08 support automated optical inspection (AOI)?

Yes, the VESD24E1-HD1HG3-08 supports AOI due to its Sn-plated exposed sidewalls on the DFN1006-2A lead frame. This plating enables reliable visual detection of solder wetting and joint formation without requiring X-ray inspection. The feature reduces final test cost and improves yield in high-volume SMT assembly lines for automotive and industrial PCBs.

What is the capacitance of the VESD24E1-HD1HG3-08 at 0 V bias?

The VESD24E1-HD1HG3-08 has a typical capacitance of 28 pF and a maximum of 31 pF at 0 V reverse bias and 1 MHz. This low, well-controlled capacitance minimizes signal distortion on high-speed interfaces such as USB 2.0, CAN FD, and LVDS, enabling placement directly at connector entry points without compromising eye diagram integrity.

VESD24E1-HD1HG3-08 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
-
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
-
Unidirectional Channels:
-
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
-
Voltage - Breakdown (Min):
-
Voltage - Clamping (Max) @ Ipp:
-
Current - Peak Pulse (10/1000µs):
-
Power - Peak Pulse:
-
Power Line Protection:
-
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

VESD24E1-HD1HG3-08 FAQ

1.How can I place an order for VESD24E1-HD1HG3-08 through Aetrix?

Please submit a Request for Quotation (RFQ) for VESD24E1-HD1HG3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VESD24E1-HD1HG3-08 reliable?

The price and inventory of VESD24E1-HD1HG3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VESD24E1-HD1HG3-08 is usually 5 days.

3.What payment methods are accepted for VESD24E1-HD1HG3-08?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VESD24E1-HD1HG3-08 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VESD24E1-HD1HG3-08?

VESD24E1-HD1HG3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VESD24E1-HD1HG3-08 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VESD24E1-HD1HG3-08?

For technical support, including VESD24E1-HD1HG3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VESD24E1-HD1HG3-08 requirements.

6.How does Aetrix verify that VESD24E1-HD1HG3-08 is sourced from the original manufacturer or authorized distributors?

All VESD24E1-HD1HG3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VESD24E1-HD1HG3-08 meets industry standards.

7.What is the process for return or replacement of VESD24E1-HD1HG3-08?

All VESD24E1-HD1HG3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VESD24E1-HD1HG3-08, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VESD24E1-HD1HG3-08 part is unused and in its original packaging.

Return procedure for VESD24E1-HD1HG3-08:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

VESD24E1-HD1HG3-08 Tags

  • VESD24E1-HD1HG3-08
  • VESD24E1-HD1HG3-08 PDF
  • VESD24E1-HD1HG3-08 Datasheet
  • VESD24E1-HD1HG3-08 Specifications
  • VESD24E1-HD1HG3-08 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division VESD24E1-HD1HG3-08
  • Buy VESD24E1-HD1HG3-08
  • VESD24E1-HD1HG3-08 Price
  • VESD24E1-HD1HG3-08 Distributor
  • VESD24E1-HD1HG3-08 Supplier
  • VESD24E1-HD1HG3-08 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER