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Vishay General Semiconductor - Diodes Division VGSOT08C-HG3-18

Part No.:
VGSOT08C-HG3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixVGSOT08C-HG3-18.pdf
Description:
TVS DIODE 8VWM 19.2VC SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,418

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Product details

Overview

VGSOT08C-HG3-18 from Vishay Semiconductors is a two-line unidirectional ESD protection diode in SOT-23 package, featuring 8 V reverse stand-off voltage (VRWM), ±30 kV IEC 61000-4-2 ESD immunity, and 500 W peak pulse power (8/20 μs). It operates from –55 °C to +150 °C and supports BiAs-mode (bidirectional asymmetrical) or BiSy-mode (bidirectional symmetrical) configurations for data line protection in USB 2.0 interfaces.

For engineers reviewing the VGSOT08C-HG3-18 datasheet, VGSOT08C-HG3-18 pinout, VGSOT08C-HG3-18 application, or VGSOT08C-HG3-18 equivalent, this page delivers verified electrical characteristics, dual-mode circuit configuration details, SOT-23 terminal mapping, AEC-Q101 qualification status, and real-world clamping behavior under 28 A 8/20 μs transients.

Technical Context

The VGSOT08C-HG3-18 implements a common-anode dual-diode structure enabling two independent signal lines (L1/L2) to share a single ground connection (pin 3) in BiAs-mode, with asymmetric forward/reverse clamping-1.2 V VF (forward) and 14.4 V VC (reverse, at 28 A). In BiSy-mode, pins 1 and 2 form a bidirectional path with pin 3 floating, delivering symmetrical clamping (11.7 V VC typ. at 1 A, 18.5 V at 28 A) across ± polarity transients.

Its 175–250 pF capacitance at 0 V bias (1 MHz) and <5 μA IR at 8 V VRWM support high-speed data integrity in USB 2.0 and HDMI 1.4 applications. The device meets AEC-Q101 stress requirements including H3B-class human body model (>8 kV) and is qualified for automotive and industrial environments per J-STD-020 MSL level 1 reflow profile.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM8 V - Maximum continuous reverse working voltage before leakage exceeds 5 μA; sets upper limit for protected line DC bias.
VBR (min)9 V - Reverse breakdown voltage at 1 mA; defines minimum threshold for transient conduction in BiAs-mode.
VC (max, 28 A)18 V - Maximum clamping voltage during 8/20 μs surge; determines worst-case overvoltage seen by downstream ICs.
CD (0 V)175–250 pF - Junction capacitance at zero bias; directly impacts signal rise time and insertion loss in 480 Mbps USB 2.0 paths.
IPPM (8/20 μs)28 A - Peak pulse current handling; enables robust protection against IEC 61000-4-5 surges without failure.
TJ max.+150 °C - Maximum junction temperature; supports operation in under-hood automotive modules and sealed industrial enclosures.
ESD immunity±30 kV - Contact and air discharge per IEC 61000-4-2 and ISO 10605; exceeds Level 4 system-level ESD requirements.

Pinout & Package

SOT-23 package (3-pin, JEDEC TO-236AB), 9.2 mg weight, UL 94 V-0 molding compound, MSL level 1, peak reflow ≤260 °C.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Anode of diode D1Connects to first protected signal line (L1) in BiAs-mode; or forms bidirectional path with pin 2 in BiSy-mode.
Pin 2Anode of diode D2Connects to second protected signal line (L2) in BiAs-mode; or completes bidirectional path with pin 1 in BiSy-mode.
Pin 3Common cathodeGround reference for both diodes in BiAs-mode; must be left unconnected in BiSy-mode.

Key Features

FeatureDesign Value
Dual-mode operationBiAs-mode (two-line, common-ground) and BiSy-mode (single-line, symmetrical) selectable via pin 3 connection-no BOM change required.
Low clamping asymmetryForward clamping ≤3.2 V at 28 A ensures sub-3.3 V logic-safe negative transient suppression in 3.3 V systems.
AEC-Q101 qualifiedQualified per automotive reliability standard including HBM >8 kV, enabling use in infotainment and ADAS sensor interfaces.
e3 Sn terminationRoHS-compliant matte tin plating ensures solderability and long-term intermetallic stability in lead-free assembly processes.
Low leakageIR ≤5 μA at 8 V VRWM minimizes standby power loss and prevents false triggering in battery-powered IoT sensors.

Applications

USB 2.0 Data LinesHDMI 1.4 TMDS Channels

Use Scenario: Protecting D+ and D− differential pair in portable USB host controllers against ESD events during hot-plug insertion.

IC Role / Device Role / Timing Role: Two-line unidirectional clamp with common cathode (pin 3) to system ground, operating in BiAs-mode.

Use Value: 175–250 pF capacitance preserves 480 Mbps eye diagram integrity while limiting clamping to ≤18 V at 28 A surge.

Use Scenario: Safeguarding HDMI 1.4 transition-minimized differential signaling (TMDS) channels from user-hand ESD in AV receivers and set-top boxes.

IC Role / Device Role / Timing Role: Dual-channel ESD suppressor placed at connector side, leveraging BiAs-mode for independent L1/L2 protection with shared ground return.

Use Value: ±30 kV contact discharge immunity and 14.4 V max clamping at 28 A prevent pixel corruption and link training failures.

Automotive InfotainmentIndustrial RS-485 Nodes

Use Scenario: Shielding CAN FD or LVDS display interface traces in automotive head units exposed to 150 pF/330 Ω ESD pulses per ISO 10605.

IC Role / Device Role / Timing Role: AEC-Q101 qualified dual-line protector configured in BiAs-mode with pin 3 grounded to chassis.

Use Value: 150 °C TJ max and <5 μA IR at 8 V enable reliable operation in dash-mounted electronics without thermal derating.

Use Scenario: Adding secondary ESD protection on RS-485 bus nodes in factory automation PLCs where primary TVS may be undersized.

IC Role / Device Role / Timing Role: BiSy-mode configuration (pins 1–2 active, pin 3 open) providing symmetrical ±18.5 V clamping for differential bus lines.

Use Value: 11.7 V typ. clamping at 1 A and 18.5 V max at 28 A ensure receiver input stays within common-mode range during transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ESD9X8.0SHT1GSingle-line, 8 V VRWM, 120 pF CD (0 V), 12 A IPPM (8/20 μs), SOD-923 packageLimited to one signal line; lower surge rating; smaller footprint but no dual-line capabilitySelect when protecting isolated single-ended signals where space is critical and 28 A surge margin is unnecessary.
TPD2EUSB30DRYRTwo-line, 5.5 V VRWM, 1.1 pF CD (0 V), 3 A IPPM (8/20 μs), 6-pin UQFN packageOptimized for USB 3.0 (5 Gbps); ultra-low capacitance but insufficient for 28 A IEC 61000-4-5 surgesPrefer for high-speed serial links requiring <1.5 pF loading; not suitable as direct replacement for 28 A surge duty.

Compared with ESD9X8.0SHT1G and TPD2EUSB30DRYR, the VGSOT08C-HG3-18 uniquely delivers dual-line protection with 28 A surge capacity and 8 V VRWM in a standard SOT-23-enabling cost-effective, layout-compatible hardening of legacy USB 2.0 and RS-485 designs without redesigning PCB grounding or increasing component count.

Availability

VGSOT08C-HG3-18 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, automotive infotainment subsystems, and industrial RS-485 node hardening requiring stable component supply and AEC-Q101 compliance.

Supply support for VGSOT08C-HG3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.

The VGSOTxxC family was engineered specifically for high-surge, low-capacitance ESD protection of high-speed data lines-including USB, HDMI, and automotive serial buses-with emphasis on AEC-Q101 qualification and dual-mode flexibility.

FAQ

What is the maximum clamping voltage of the VGSOT08C-HG3-18 under a 28 A 8/20 μs surge?

The VGSOT08C-HG3-18 exhibits a maximum reverse clamping voltage (VC) of 18 V when subjected to a 28 A 8/20 μs transient pulse, as specified in the absolute maximum ratings table. This value represents the worst-case overvoltage imposed on protected circuitry during surge events and is measured between pin 1 (or pin 2) and pin 3 in BiAs-mode configuration. The VGSOT08C-HG3-18 maintains this clamping performance across its full operating temperature range of –55 °C to +150 °C.

Can the VGSOT08C-HG3-18 be used in bidirectional symmetrical (BiSy) mode, and what are the key electrical differences?

Yes, the VGSOT08C-HG3-18 supports BiSy-mode operation by connecting pins 1 and 2 to the signal line and leaving pin 3 unconnected. In this configuration, it provides symmetrical clamping: typical reverse clamping voltage is 11.7 V at 1 A and 18.5 V at 28 A (8/20 μs), with VRWM increased to 8.5 V and capacitance reduced to 87–125 pF at 0 V. This mode suits single-ended or differential lines requiring equal positive/negative transient suppression, such as RS-485 stubs or legacy UART interfaces.

Is the VGSOT08C-HG3-18 qualified to AEC-Q101, and what test conditions does that include?

Yes, the VGSOT08C-HG3-18 is AEC-Q101 qualified. This includes passing human body model (HBM) testing at Class H3B (>8 kV), machine model (MM), charged device model (CDM), and temperature cycling, high-temperature operating life, and unbiased highly accelerated stress test (UHAST). Qualification confirms suitability for automotive applications such as infotainment, body control modules, and ADAS sensor interfaces where reliability under thermal and electrical stress is mandatory.

What is the reverse leakage current specification for the VGSOT08C-HG3-18 at its rated VRWM?

The VGSOT08C-HG3-18 specifies a maximum reverse leakage current (IR) of 5 μA when biased at its rated 8 V VRWM, measured at Tamb = 25 °C. This low leakage ensures minimal impact on signal integrity and power budget in battery-operated devices like portable medical sensors or wireless IoT endpoints. Leakage remains below 100 nA at 5 V bias, supporting use in low-power wake-on-event architectures without compromising standby current targets.

How does the capacitance of the VGSOT08C-HG3-18 vary with applied reverse voltage, and why does this matter for USB 2.0?

The VGSOT08C-HG3-18 exhibits 175–250 pF capacitance at 0 V reverse bias (1 MHz), dropping to ≤90 pF at 4 V VR. This voltage-dependent capacitance is critical for USB 2.0: at typical 3.3 V DC common-mode bias, the effective CD is ~120 pF, which-combined with trace inductance-preserves signal rise/fall times below 1 ns and maintains eye opening at 480 Mbps. Exceeding 250 pF would degrade jitter and increase bit error rate in high-speed differential signaling.

VGSOT08C-HG3-18 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
TO-236-3, SC-59, SOT-23-3
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
2
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
8V (Max)
Voltage - Breakdown (Min):
9V
Voltage - Clamping (Max) @ Ipp:
18V
Current - Peak Pulse (10/1000µs):
28A (8/20µs)
Power - Peak Pulse:
500W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
175pF @ 1MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

VGSOT08C-HG3-18 FAQ

1.How can I place an order for VGSOT08C-HG3-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for VGSOT08C-HG3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VGSOT08C-HG3-18 reliable?

The price and inventory of VGSOT08C-HG3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VGSOT08C-HG3-18 is usually 5 days.

3.What payment methods are accepted for VGSOT08C-HG3-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VGSOT08C-HG3-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VGSOT08C-HG3-18?

VGSOT08C-HG3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VGSOT08C-HG3-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VGSOT08C-HG3-18?

For technical support, including VGSOT08C-HG3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VGSOT08C-HG3-18 requirements.

6.How does Aetrix verify that VGSOT08C-HG3-18 is sourced from the original manufacturer or authorized distributors?

All VGSOT08C-HG3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VGSOT08C-HG3-18 meets industry standards.

7.What is the process for return or replacement of VGSOT08C-HG3-18?

All VGSOT08C-HG3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VGSOT08C-HG3-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VGSOT08C-HG3-18 part is unused and in its original packaging.

Return procedure for VGSOT08C-HG3-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

VGSOT08C-HG3-18 Tags

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