Vishay General Semiconductor - Diodes Division VTVS11ASMF-HM3-18
- Part No.:
- VTVS11ASMF-HM3-18
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS11ASMF-HM3-18.pdf
- Description:
- TVS DIODE 11.2VWM 18VC DO219AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,104
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Product details
Overview
VTVS11ASMF-HM3-18 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines. It features a 11.2 V maximum stand-off voltage (VRWM), 12.6–13.9 V reverse breakdown voltage (VBR) at 1 mA, 21.13 A peak pulse current (IPPM) under 10/1000 μs waveform, and clamps to ≤18.0 V at rated current - used in automotive infotainment power rails and USB interface protection.
For engineers reviewing the VTVS11ASMF-HM3-18 datasheet, VTVS11ASMF-HM3-18 pinout, VTVS11ASMF-HM3-18 application, or VTVS11ASMF-HM3-18 equivalent, key selection criteria include its ±5 % VBR tolerance, halogen-free SOD-123W-compatible SMF package, IEC 61000-4-2 ±30 kV ESD rating, 910 pF junction capacitance at 0 V, and AEC-Q101 qualification status.
Technical Context
This TVS diode operates as a unidirectional clamping device with avalanche breakdown behavior, optimized for fast response (<1 ns) and low clamping ratio (VC/VBR ≈ 1.37). Its thermal resistance (RthJL = 20 K/W) enables reliable operation up to TJ = +175 °C in high-density PCB layouts.
The SMF package supports wave and reflow soldering per J-STD-020 MSL level 1, with peak temperature tolerance up to 260 °C. Its 1.08 mm height and 3.9 × 1.9 mm footprint align with space-constrained automotive and industrial control modules requiring robust overvoltage immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 400 W (10/1000 μs waveform) - sustains repeated surge events without degradation in automotive load-dump or ISO 7637-2 compliant systems |
| Stand-off Voltage (VRWM) | 11.2 V max - blocks normal operating voltage while remaining non-conductive below breakdown threshold |
| Breakdown Voltage (VBR) | 12.6–13.9 V at IT = 1 mA - defines precise clamping onset point with ±5 % tolerance for predictable protection margin |
| Clamping Voltage (VC) | ≤18.0 V at IPPM = 21.13 A - limits downstream IC stress during transients to safe levels compatible with 12 V logic interfaces |
| Junction Capacitance | 910 pF at VR = 0 V, f = 1 MHz - impacts signal integrity in high-speed data lines; suitable for <10 Mbps USB 2.0 or CAN FD bus protection |
| ESD Rating | ±30 kV contact / ±30 kV air (IEC 61000-4-2) - exceeds Level 4 requirements for human-body-model ESD immunity in exposed connectors |
| Operating Temperature | −55 °C to +175 °C - supports under-hood automotive deployment and industrial environments with wide thermal cycling |
Pinout & Package
SMF (DO-219AB) package: low-profile surface-mount case with cathode marking bar; dimensions 3.9 mm × 1.9 mm × 1.08 mm; compatible with SOD-123W, SOD-123F, and SOD-123FL footprints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input side of protected line | Connected to signal/power line needing surge suppression; referenced to system ground via cathode |
| Cathode | Ground reference terminal | Connected to system ground plane; provides low-inductance return path for transient current during clamping |
Key Features
| Feature | Design Value |
|---|---|
| "Low-Noise" fast response | Sub-nanosecond turn-on ensures clamping before sensitive ICs experience overstress in ESD events |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and mechanical shock testing |
| Halogen-free molding compound | Complies with RoHS and JEDEC JS709E material restrictions for environmentally regulated production |
| Wave/reflow solderable | MSL level 1 rating allows unlimited floor life and single-reflow processing without baking |
| Excellent clamping capability | Clamping ratio VC/VBR = 1.37 maintains tight voltage margin between VRWM and VC for robust design margin |
Applications
| Automotive Infotainment Power Rail Protection | USB 2.0 Data Line ESD Suppression |
|---|---|
Use Scenario: Protecting 12 V supply inputs to head unit MCUs and display drivers against load dump and jump-start surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between VCC and GND, clamping transients before they reach LDO regulators or PMICs. Use Value: With 11.2 V VRWM and 18.0 V VC, it preserves 12 V rail integrity while allowing >1 V headroom for regulator dropout and ripple. |
Use Scenario: Shielding D+ and D− lines of automotive USB ports from ESD events during cable insertion or hot-plug. IC Role / Device Role / Timing Role: Bidirectional-capable layout using two VTVS11ASMF-HM3-18 devices (anode-to-anode) for differential line protection. Use Value: 910 pF capacitance meets USB 2.0 eye diagram requirements at 480 Mbps; ±30 kV ESD rating exceeds USB-IF compliance thresholds. |
| Industrial Sensor Interface Protection | POS Terminal Keypad ESD Guarding |
Use Scenario: Safeguarding 4–20 mA loop-powered sensor outputs connected to PLC analog input cards. IC Role / Device Role / Timing Role: Placed across output terminals to shunt induced lightning-induced surges on long field wiring runs. Use Value: 400 W peak power rating handles multiple 10/1000 μs transients common in factory-floor electromagnetic environments. |
Use Scenario: Protecting membrane keypad traces in retail payment terminals exposed to frequent operator ESD discharge. IC Role / Device Role / Timing Role: Mounted directly at connector entry points to divert contact-discharge energy before reaching MCU GPIOs. Use Value: Low 1.08 mm profile fits beneath compact keypad overlays; ±30 kV air discharge rating prevents false keypresses or reset events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ11A | Same VRWM (11 V), but SMA package (DO-214AC); higher RthJA (50 K/W vs. 20 K/W); 1000 W Pppm rating | Higher power handling but larger footprint; less suitable for ultra-thin automotive modules | Select when higher surge margin is needed and board space permits larger package |
| TPSMD11A | Same VRWM (11.1 V), but SMD package (DO-214AB); 600 W Pppm; 1000 pF capacitance; no AEC-Q101 listing | Lacks automotive qualification; slightly higher capacitance may affect high-speed signal integrity | Select for cost-sensitive industrial designs where AEC-Q101 is not required |
Compared with SMAJ11A and TPSMD11A, VTVS11ASMF-HM3-18 offers superior thermal performance in minimal volume, AEC-Q101 validation for automotive use, and tighter VBR tolerance - making it optimal for space-constrained, high-reliability 12 V system protection where consistent clamping behavior is critical.
Availability
VTVS11ASMF-HM3-18 is available at Aetrix Electronics and suitable for automotive infotainment, industrial sensor interfaces, USB 2.0 port protection, and POS terminal ESD hardening requiring stable component supply across multi-year production cycles.
Supply support for VTVS11ASMF-HM3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The VTVS eSMP® Series delivers compact, high-power TVS diodes optimized for AEC-Q101-compliant automotive electronics and space-constrained industrial systems requiring robust ESD and surge immunity.
FAQ
What is the maximum clamping voltage of VTVS11ASMF-HM3-18 at its rated peak pulse current?
The VTVS11ASMF-HM3-18 clamps to a maximum of 18.0 V at its rated peak pulse current of 21.13 A (10/1000 μs waveform). This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The clamping performance is guaranteed across the full operating temperature range of −55 °C to +175 °C, ensuring consistent protection in demanding environments where VTVS11ASMF-HM3-18 is deployed.
Is VTVS11ASMF-HM3-18 qualified for automotive applications?
Yes, VTVS11ASMF-HM3-18 is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature reverse bias, temperature cycling, and mechanical shock - all required for automotive-grade reliability. This qualification confirms that VTVS11ASMF-HM3-18 meets the quality and lifetime expectations for under-hood and cabin-mounted electronics, such as infotainment power supplies and body control modules where VTVS11ASMF-HM3-18 is commonly applied.
What does the "HM3" suffix in VTVS11ASMF-HM3-18 indicate?
The "HM3" suffix denotes halogen-free (H), RoHS-compliant and lead-free terminations (M), and 3 k per 7″ reel packaging (3). Specifically, "H" confirms halogen-free molding compound per JEDEC JS709E; "M" indicates matte tin plating on terminations; and "3" specifies tape-and-reel packaging with 3,000 units per 7-inch reel. This coding ensures traceability and compliance alignment for VTVS11ASMF-HM3-18 in regulated manufacturing environments.
Can VTVS11ASMF-HM3-18 be used for bidirectional protection?
No, VTVS11ASMF-HM3-18 is a unidirectional TVS diode and must be used with correct polarity - anode to line, cathode to ground. For bidirectional protection, two VTVS11ASMF-HM3-18 devices can be connected anode-to-anode or cathode-to-cathode, forming a symmetrical clamp. This configuration is validated for USB 2.0 and other differential data lines where VTVS11ASMF-HM3-18 is employed, but the device itself is not internally bidirectional.
What is the junction capacitance of VTVS11ASMF-HM3-18 and how does it affect high-speed signals?
VTVS11ASMF-HM3-18 exhibits 910 pF typical junction capacitance at VR = 0 V and f = 1 MHz. This value increases slightly at lower reverse voltages but remains within specification for USB 2.0 (480 Mbps) signal integrity when placed on D+/D− lines with proper layout. Designers should minimize trace length and avoid parallel routing near sensitive nodes to prevent signal distortion - a constraint directly addressed in VTVS11ASMF-HM3-18's application guidance for high-speed interface protection.
VTVS11ASMF-HM3-18 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11.2V
- Voltage - Breakdown (Min):
- 12.6V
- Voltage - Clamping (Max) @ Ipp:
- 18V
- Current - Peak Pulse (10/1000µs):
- 21.13A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 910pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS11ASMF-HM3-18 FAQ
1.How can I place an order for VTVS11ASMF-HM3-18 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS11ASMF-HM3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS11ASMF-HM3-18 reliable?
The price and inventory of VTVS11ASMF-HM3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS11ASMF-HM3-18 is usually 5 days.
3.What payment methods are accepted for VTVS11ASMF-HM3-18?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS11ASMF-HM3-18 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS11ASMF-HM3-18?
VTVS11ASMF-HM3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS11ASMF-HM3-18 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS11ASMF-HM3-18?
For technical support, including VTVS11ASMF-HM3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS11ASMF-HM3-18 requirements.
6.How does Aetrix verify that VTVS11ASMF-HM3-18 is sourced from the original manufacturer or authorized distributors?
All VTVS11ASMF-HM3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS11ASMF-HM3-18 meets industry standards.
7.What is the process for return or replacement of VTVS11ASMF-HM3-18?
All VTVS11ASMF-HM3-18 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS11ASMF-HM3-18, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS11ASMF-HM3-18 part is unused and in its original packaging.
Return procedure for VTVS11ASMF-HM3-18:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS11ASMF-HM3-18 Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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