Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division VTVS12GSMF-M3-08

Part No.:
VTVS12GSMF-M3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-219AB
Datasheet:
AetrixVTVS12GSMF-M3-08.pdf
Description:
TVS DIODE 12.4VWM 20.1VC DO219AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,327

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

VTVS12GSMF-M3-08 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines. It features 12.4 V maximum stand-off voltage (VRWM), 14.41–15.00 V reverse breakdown voltage (VBR) at 1 mA, 19.53 A peak pulse current (IPPM) under 10/1000 μs waveform, and clamps to 20.1 V at IPPM - used in automotive infotainment power rails and USB-C port protection.

For engineers reviewing the VTVS12GSMF-M3-08 datasheet, VTVS12GSMF-M3-08 pinout, VTVS12GSMF-M3-08 application, or VTVS12GSMF-M3-08 equivalent, key selection criteria include ±2 % VBR tolerance, IEC 61000-4-2 ±30 kV ESD immunity, 807 pF junction capacitance at 0 V, 175 °C max junction temperature, and compatibility with SOD-123W footprint layouts.

Technical Context

This device operates as a unidirectional avalanche diode, triggering when reverse voltage exceeds its precisely specified 14.41–15.00 V breakdown range. Its low-clamping 20.1 V VC at 19.53 A IPPM enables robust protection of 12 V nominal systems without overstressing downstream ICs.

The SMF package delivers 20 K/W thermal resistance to leads and supports wave/reflow soldering per J-STD-020 MSL level 1. With halogen-free molding compound and AEC-Q101 qualification available, it meets automotive-grade reliability requirements for under-hood and cabin electronics.

Key Specifications

Parameter Value and Actual Design Meaning
Peak Pulse Power 400 W (10/1000 μs waveform) - sustains high-energy transients without failure
Stand-off Voltage VRWM 12.4 V - blocks normal 12 V rail operation while remaining inactive
Breakdown Voltage VBR 14.41–15.00 V at IT = 1 mA - tight ±2 % tolerance ensures predictable turn-on
Clamping Voltage VC 20.1 V at IPPM = 19.53 A - limits voltage seen by protected ICs during surge
Junction Capacitance CD 807 pF at VR = 0 V, f = 1 MHz - suitable for <10 Mbps data lines like USB 2.0
ESD Immunity ±30 kV contact & air discharge (IEC 61000-4-2) - exceeds Level 4 system-level ESD requirements
Operating Temperature −55 °C to +175 °C - supports under-hood automotive deployment

Pinout & Package

SMF (DO-219AB) low-profile surface-mount package: 3.9 mm × 1.9 mm × 1.08 mm body, cathode marked by bar on top surface, compatible with SOD-123W PCB footprints and reflow profiles up to 260 °C peak.

Pin/Terminal Circuit Role Design Meaning
Anode Current return path during clamping Connected to ground or low-impedance return plane; defines polarity for unidirectional operation
Cathode Protected line connection point Connected to signal/power line requiring protection; cathode marking aligns with PCB silkscreen polarity indicator

Key Features

Feature Design Value
±2 % VBR tolerance Enables precise coordination with 12 V system overvoltage thresholds and avoids premature conduction
"Low-Noise" fast response Sub-nanosecond turn-on ensures clamping before sensitive ICs experience damaging voltage overshoot
Halogen-free & RoHS-compliant Meets automotive ELV and global environmental compliance mandates without performance trade-offs
Wave and reflow solderable Supports high-volume automated assembly with standard lead-free reflow profiles (peak ≤260 °C)
AEC-Q101 qualified option Validated for automotive applications including infotainment, body control, and ADAS sensor interfaces

Applications

Automotive Infotainment Power Rail USB-C Port Protection

Use Scenario: Protecting 12 V supply lines feeding head unit processors and display drivers against load dump and ISO 7637-2 pulses.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between power input and local bulk capacitor, clamping transients before they reach PMIC inputs.

Use Value: 20.1 V clamping ensures downstream 12 V-rated regulators remain within safe operating area during 10/1000 μs surges up to 19.53 A.

Use Scenario: Safeguarding USB-C CC and VBUS lines against ESD events and hot-plug induced transients in docking stations.

IC Role / Device Role / Timing Role: Standoff-rated TVS connected from VBUS to GND, activated only during >12.4 V overvoltage events.

Use Value: 807 pF capacitance avoids signal integrity degradation on 10 Gbps USB 3.2 Gen 2x1 links while delivering ±30 kV ESD protection.

Industrial Sensor Interface Automotive Body Control Module

Use Scenario: Shielding 12 V analog sensor outputs (e.g., pressure, temperature) from cable-induced surges in factory automation systems.

IC Role / Device Role / Timing Role: Low-leakage (0.05 μA at VRWM) TVS placed at connector entry point to minimize impact on precision signal conditioning.

Use Value: −55 °C to +175 °C operating range allows direct mounting near engine bay sensors without derating.

Use Scenario: Protecting LIN bus power supplies and microcontroller I/O pins from battery reverse polarity and jump-start transients.

IC Role / Device Role / Timing Role: Unidirectional suppression element integrated into BCU power distribution network, coordinated with upstream fuses.

Use Value: Tight ±2 % VBR enables reliable coordination with 13.5 V watchdog reset thresholds and prevents nuisance tripping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ12A-E3/57T ±5 % VBR tolerance (12.4–14.8 V), 200 W PPPM, SMA package Lower power rating and looser tolerance limit use in non-automotive 12 V systems Select when cost sensitivity outweighs precision clamping and AEC-Q101 need
TPSMD12A ±5 % VBR, 600 W PPPM, DO-214AB package, 25.5 V VC at 24.4 A Higher clamping voltage reduces margin for 12 V ICs; larger footprint requires layout change Choose only if higher surge energy handling is required and board space permits larger package

Compared with SMAJ12A-E3/57T and TPSMD12A, VTVS12GSMF-M3-08 provides tighter ±2 % VBR control, lower 20.1 V clamping, and SMF package compatibility with compact SOD-123W layouts - making it optimal for space-constrained automotive and industrial 12 V protection where precision and footprint matter.

Availability

VTVS12GSMF-M3-08 is available at Aetrix Electronics and suitable for automotive infotainment systems, USB-C interface designs, and industrial sensor modules requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for VTVS12GSMF-M3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.

The VTVS eSMP® series delivers high-power transient suppression in ultra-low-profile packages, engineered specifically for next-generation automotive electronics and high-density portable devices demanding precision clamping and AEC-Q101 validation.

FAQ

What is the maximum clamping voltage of the VTVS12GSMF-M3-08 under rated surge conditions?

The VTVS12GSMF-M3-08 clamps to a maximum of 20.1 V at its rated peak pulse current of 19.53 A (10/1000 μs waveform). This value is measured per IEC 61000-4-5 test conditions and ensures protected 12 V circuits remain within safe operating limits during transient events. The VTVS12GSMF-M3-08 achieves this with minimal voltage overshoot due to its fast avalanche response.

Is the VTVS12GSMF-M3-08 suitable for automotive applications?

Yes - the VTVS12GSMF-M3-08 is offered in an AEC-Q101 qualified version and operates from −55 °C to +175 °C, meeting under-hood and cabin environmental requirements. Its ±2 % VBR tolerance, 20.1 V clamping, and IEC 61000-4-2 ±30 kV ESD rating make it appropriate for automotive infotainment, body control, and sensor interface protection. The VTVS12GSMF-M3-08 is explicitly referenced in Vishay's automotive-grade TVS documentation.

What does the "G" in VTVS12GSMF-M3-08 indicate?

The "G" in VTVS12GSMF-M3-08 denotes ±2 % tolerance on the reverse breakdown voltage (VBR), distinguishing it from "A"-suffix variants with ±5 % tolerance. This tighter specification enables more accurate coordination with system-level overvoltage thresholds and improves design margin in safety-critical 12 V applications. The VTVS12GSMF-M3-08 maintains identical package, power rating, and clamping performance as its "A" counterpart.

Does the VTVS12GSMF-M3-08 require special PCB layout considerations?

Yes - the VTVS12GSMF-M3-08 should be placed as close as possible to the protected interface (e.g., connector or IC pin) with short, low-inductance traces to ground. Its SMF (DO-219AB) package uses a recommended footprint of 2.9 mm × 1.4 mm pad spacing; thermal relief on cathode/anode pads improves solder joint reliability. The VTVS12GSMF-M3-08 benefits from a solid ground plane beneath the device to minimize clamping impedance.

What is the junction capacitance of the VTVS12GSMF-M3-08 and how does it affect high-speed signals?

The VTVS12GSMF-M3-08 has a typical junction capacitance of 807 pF at 0 V reverse bias and 1 MHz. While suitable for DC power rails and low-to-moderate speed data lines (e.g., USB 2.0, LIN, CAN FD), this capacitance may degrade signal integrity on >100 Mbps differential interfaces. For such cases, lower-capacitance alternatives should be evaluated. The VTVS12GSMF-M3-08 is not intended for HDMI or PCIe signal line protection.

VTVS12GSMF-M3-08 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-219AB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
12.4V
Voltage - Breakdown (Min):
14.41V
Voltage - Clamping (Max) @ Ipp:
20.1V
Current - Peak Pulse (10/1000µs):
19.53A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
807pF @ 1MHz
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-219AB (SMF)

VTVS12GSMF-M3-08 FAQ

1.How can I place an order for VTVS12GSMF-M3-08 through Aetrix?

Please submit a Request for Quotation (RFQ) for VTVS12GSMF-M3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VTVS12GSMF-M3-08 reliable?

The price and inventory of VTVS12GSMF-M3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS12GSMF-M3-08 is usually 5 days.

3.What payment methods are accepted for VTVS12GSMF-M3-08?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS12GSMF-M3-08 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VTVS12GSMF-M3-08?

VTVS12GSMF-M3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VTVS12GSMF-M3-08 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VTVS12GSMF-M3-08?

For technical support, including VTVS12GSMF-M3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS12GSMF-M3-08 requirements.

6.How does Aetrix verify that VTVS12GSMF-M3-08 is sourced from the original manufacturer or authorized distributors?

All VTVS12GSMF-M3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS12GSMF-M3-08 meets industry standards.

7.What is the process for return or replacement of VTVS12GSMF-M3-08?

All VTVS12GSMF-M3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS12GSMF-M3-08, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VTVS12GSMF-M3-08 part is unused and in its original packaging.

Return procedure for VTVS12GSMF-M3-08:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

VTVS12GSMF-M3-08 Tags

  • VTVS12GSMF-M3-08
  • VTVS12GSMF-M3-08 PDF
  • VTVS12GSMF-M3-08 Datasheet
  • VTVS12GSMF-M3-08 Specifications
  • VTVS12GSMF-M3-08 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division VTVS12GSMF-M3-08
  • Buy VTVS12GSMF-M3-08
  • VTVS12GSMF-M3-08 Price
  • VTVS12GSMF-M3-08 Distributor
  • VTVS12GSMF-M3-08 Supplier
  • VTVS12GSMF-M3-08 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER