My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VTVS25ASMF-M3-08
- Part No.:
- VTVS25ASMF-M3-08
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
VTVS25ASMF-M3-08.pdf
- Description:
- TVS DIODE 25.2VWM 42VC DO219AB
- Quantity:
- Payment:
- Shipping:
Inventory:18,063
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VTVS25ASMF-M3-08 from Vishay Semiconductors is a unidirectional 400 W TransZorb® transient voltage suppressor diode in SMF (DO-219AB) package, designed for ESD and surge protection of low-voltage DC lines. It features a 25.2 V maximum stand-off voltage (VRWM), 28.5–31.5 V reverse breakdown voltage (VBR) at 1 mA, and clamps to 42 V at 9.07 A peak pulse current (10/1000 μs), with 433 pF typical capacitance at 0 V - ideal for protecting USB 2.0, HDMI, and automotive sensor interfaces.
For engineers reviewing the VTVS25ASMF-M3-08 datasheet, VTVS25ASMF-M3-08 pinout, VTVS25ASMF-M3-08 application, or VTVS25ASMF-M3-08 equivalent, key selection criteria include its ±5 % VBR tolerance, 175 °C junction temperature rating, IEC 61000-4-2 ±30 kV ESD immunity, and compatibility with SOD-123W footprint constraints in space-constrained PCB layouts.
Technical Context
This device operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its 28.5–31.5 V breakdown range, delivering fast clamping response (<1 ns) to divert transients away from sensitive circuitry. Its low 433 pF capacitance minimizes signal distortion on high-speed data lines while maintaining robust 400 W peak pulse power handling per 10/1000 μs waveform.
The SMF (DO-219AB) package enables wave and reflow soldering, supports MSL level 1 moisture sensitivity, and meets halogen-free and RoHS-compliant requirements. Thermal resistance is 20 K/W (junction-to-lead, mounted on infinite heat sink), enabling reliable operation up to +175 °C junction temperature in under-hood automotive or industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 400 W (10/1000 μs waveform) - sustains high-energy surges without failure in automotive load-dump or inductive switching events |
| Stand-off Voltage (VRWM) | 25.2 V max - ensures stable non-conduction during normal 24 V system operation, avoiding false triggering |
| Breakdown Voltage (VBR) | 28.5–31.5 V at IT = 1 mA (±5 % tolerance) - defines precise overvoltage threshold for predictable clamping onset |
| Clamping Voltage (VC) | 42 V at IPPM = 9.07 A - limits downstream voltage stress to safe levels for 24 V-rated ICs and transceivers |
| Capacitance (CD) | 433 pF at VR = 0 V, f = 1 MHz - low enough to avoid signal integrity degradation on 480 Mbps USB 2.0 lines |
| ESD Rating | ±30 kV contact / ±30 kV air (IEC 61000-4-2) - exceeds Level 4 immunity for harsh industrial and automotive user-interface ports |
| Operating Temperature | −55 °C to +175 °C - qualified for engine control units, battery management systems, and industrial PLC I/O modules |
Pinout & Package
SMF (DO-219AB) package: low-profile surface-mount outline measuring 3.9 mm × 1.9 mm × 1.08 mm, compatible with SOD-123W footprint and reflow/wave soldering processes. Cathode marked by bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Ground reference terminal | Connected to system ground plane; forms return path for clamped transient current |
| Cathode | Protected line input | Connected to protected signal or power rail (e.g., 24 V CAN bus line); conducts during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 μs) | Handles automotive ISO 7637-2 Pulse 1/2a/5a surges without degradation in 24 V systems |
| ±5 % VBR tolerance (A-suffix) | Enables tighter voltage margin design vs. ±2 % G-suffix parts, reducing risk of premature conduction |
| Low 433 pF capacitance | Maintains <0.1 dB insertion loss at 100 MHz - critical for noise-sensitive analog sensor inputs |
| IEC 61000-4-2 ±30 kV ESD protection | Eliminates need for external ESD diodes on front-panel connectors in industrial HMIs |
| AEC-Q101 qualification option | Supports automotive-grade reliability validation (though VTVS25ASMF-M3-08 itself is standard grade) |
Applications
| Automotive Body Control Module (BCM) | Industrial CAN Bus Node |
|---|---|
|
Use Scenario: Protecting 24 V power input and LIN bus lines against load dump and ESD in door module ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between power rail and ground, clamping transients before they reach LDOs and microcontrollers. Use Value: Prevents latch-up or permanent damage to 24 V-rated CAN transceivers during ISO 16750-2 load-dump events up to 35 V. |
Use Scenario: Shielding RS-485/CAN physical layer from electrostatic discharge in factory-floor PLC communication nodes. IC Role / Device Role / Timing Role: Standoff protection device on differential bus lines, operating in parallel with common-mode chokes and termination resistors. Use Value: Limits bus-line voltage excursion to ≤42 V during ±30 kV contact discharge, preserving signal integrity and preventing transceiver reset. |
| USB 2.0 Port Protection | Automotive Occupant Detection Sensor |
|
Use Scenario: Safeguarding D+/D− lines of USB 2.0 host ports in infotainment head units from hot-plug ESD. IC Role / Device Role / Timing Role: Low-capacitance TVS array element (single-channel) placed adjacent to USB connector, grounded via shortest possible trace. Use Value: 433 pF capacitance avoids eye-diagram closure at 480 Mbps, while clamping ESD pulses within 1 ns to protect PHY transceivers. |
Use Scenario: Protecting capacitive or piezoresistive occupant detection sensors (e.g., seatbelt pretensioner triggers) from ignition-system RFI. IC Role / Device Role / Timing Role: Front-end transient suppressor on analog sensor supply and output lines, placed before signal conditioning op-amps. Use Value: Withstands repetitive 400 W surges without parameter shift, ensuring long-term accuracy of weight/position sensing in safety-critical airbag systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ24A | Higher VRWM (24 V), lower VC (38.9 V at 10.3 A), larger SMB (DO-214AA) package (4.58 mm × 3.94 mm) | Less suitable for ultra-thin designs; better for higher-current 12 V systems | Select when board space allows larger footprint and 12 V rail protection is primary requirement |
| TPSMD24 | Same VRWM (24 V), lower PPPM (300 W), slightly higher CD (500 pF), same SMF package | Lower surge margin; may require derating in high-temperature automotive zones | Choose only if cost sensitivity outweighs need for full 400 W capability and lowest possible capacitance |
Compared with SMBJ24A and TPSMD24, VTVS25ASMF-M3-08 delivers superior 25.2 V standoff headroom for 24 V systems, tighter ±5 % VBR tolerance for consistent clamping, and the lowest capacitance (433 pF) among SMF-packaged 400 W TVS diodes - making it optimal for high-speed, space-constrained, and thermally demanding applications.
Availability
VTVS25ASMF-M3-08 is available at Aetrix Electronics and suitable for automotive body electronics, industrial CAN networks, USB 2.0 interface protection, and occupant detection systems requiring stable component supply across extended production lifecycles.
Supply support for VTVS25ASMF-M3-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The VTVS eSMP® Series targets compact, high-power transient suppression in harsh environments, with emphasis on AEC-Q101 qualification, low capacitance, and SOD-123W-compatible packaging for next-generation ECU and sensor interface designs.
FAQ
What is the maximum working voltage (VRWM) of the VTVS25ASMF-M3-08?
The VTVS25ASMF-M3-08 has a maximum stand-off voltage (VRWM) of 25.2 V, meaning it remains non-conductive up to this DC or continuous reverse voltage level under normal operation. This value is specified at 25 °C ambient and ensures reliable blocking behavior in 24 V automotive and industrial power rails without leakage-induced power loss or false triggering.
Does the VTVS25ASMF-M3-08 meet automotive qualification standards?
The VTVS25ASMF-M3-08 is part of Vishay's AEC-Q101-qualified eSMP® family, though this specific variant (M3-08 tape-and-reel packaging code) carries standard industrial qualification. AEC-Q101 versions are available under ordering codes like VTVS25ASMF-HM3-08 (halogen-free, AEC-Q101). Always verify qualification status using the full part number and consult Vishay's official compliance documentation for your application.
What is the clamping voltage (VC) of the VTVS25ASMF-M3-08 under surge conditions?
The VTVS25ASMF-M3-08 clamps to a maximum of 42 V at its rated peak pulse current of 9.07 A (10/1000 μs waveform). This clamping voltage defines the upper voltage limit imposed on protected circuitry during transient events, ensuring downstream 24 V-rated ICs remain within safe operating area even during high-energy surges such as ISO 7637-2 Pulse 5a.
Can the VTVS25ASMF-M3-08 be used for bidirectional signal line protection?
No - the VTVS25ASMF-M3-08 is a unidirectional TVS diode, intended for DC power rail or single-polarity signal line protection. For bidirectional applications like AC-coupled data lines (e.g., RS-485, Ethernet), a bidirectional variant such as VTVS25BSMF-M3-08 (not offered in this series) or alternative dual-diode configurations would be required. Using VTVS25ASMF-M3-08 on bidirectional lines risks forward conduction during negative excursions.
What is the thermal resistance (RthJL) of the VTVS25ASMF-M3-08, and how does it affect layout?
The VTVS25ASMF-M3-08 has a thermal resistance of 20 K/W (junction-to-lead) when mounted on an infinite heat sink. In practice, this means effective PCB copper pour under the cathode/anode pads is essential to dissipate 400 W surge energy without exceeding the 175 °C maximum junction temperature. Layout must minimize trace length and maximize thermal pad area, especially in high-temperature environments like under-hood automotive modules.
VTVS25ASMF-M3-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25.2V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 42V
- Current - Peak Pulse (10/1000µs):
- 9.07A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 433pF @ 1MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
VTVS25ASMF-M3-08 FAQ
1.How can I place an order for VTVS25ASMF-M3-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for VTVS25ASMF-M3-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VTVS25ASMF-M3-08 reliable?
The price and inventory of VTVS25ASMF-M3-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VTVS25ASMF-M3-08 is usually 5 days.
3.What payment methods are accepted for VTVS25ASMF-M3-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VTVS25ASMF-M3-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VTVS25ASMF-M3-08?
VTVS25ASMF-M3-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VTVS25ASMF-M3-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VTVS25ASMF-M3-08?
For technical support, including VTVS25ASMF-M3-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VTVS25ASMF-M3-08 requirements.
6.How does Aetrix verify that VTVS25ASMF-M3-08 is sourced from the original manufacturer or authorized distributors?
All VTVS25ASMF-M3-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VTVS25ASMF-M3-08 meets industry standards.
7.What is the process for return or replacement of VTVS25ASMF-M3-08?
All VTVS25ASMF-M3-08 units undergo pre-shipment inspection (PSI). If there is an issue with VTVS25ASMF-M3-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VTVS25ASMF-M3-08 part is unused and in its original packaging.
Return procedure for VTVS25ASMF-M3-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VTVS25ASMF-M3-08 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
